Inventor profile of:

Jin-Ping Han

City:

Fishkill, New York

Country:

United States

Published Applications:

49

Last publication date:

2019-12-12

Top Assignees for applications by Jin-Ping Han

The entities that hold a legal rights for patent applications filed by inventor Han Jin-Ping:

Recent patent applications by Han Jin-Ping

Jin-Ping Han from Fishkill, US has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2019-12-12
US20190378555A1
Physics

Circuitry for one-transistor synapse cell and operation method of the same

#2 | 2019-03-28
US20190096463A1
Physics

One-transistor synapse cell with weight adjustment

#3 | 2019-03-28
US20190096462A1
Physics

One-transistor synapse cell with weight adjustment

#4 | 2018-03-29
US20180090596A1
Electricity

Semiconductor device including optimized gate stack profile

#5 | 2018-02-08
US20180039881A1
Physics

Racetrack synapse for neuromorphic applications

#6 | 2016-03-03
US20160064564A1
Electricity

Semiconductor devices and methods of manufacture thereof

#7 | 2015-12-17
US20150364328A1
Electricity

Methods of fabricating semiconductor devices and structures thereof

#8 | 2014-08-07
US20140220770A1
Electricity

Methods of fabricating semiconductor devices and structures thereof

#9 | 2013-08-29
US20130224942A1
Electricity

Methods of fabricating semiconductor devices and structures thereof

#10 | 2012-12-20
US20120319208A1
Electricity

Methods of fabricating semiconductor devices and structures thereof

#11 | 2011-09-29
US20110237039A1
Electricity

Methods of forming p-channel field effect transistors having SiGe source/drain regions

#12 | 2011-07-21
US20110175174A1
Electricity

Methods of manufacturing resistors and structures thereof

#13 | 2011-07-21
US20110175148A1
Electricity

Methods of Forming Conductive Features and Structures Thereof

#14 | 2011-07-14
US20110169096A1
Electricity

Balancing NFET and PFET performance using straining layers

#15 | 2011-01-13
US20110006373A1
Electricity

Transistor Structure

#16 | 2010-12-09
US20100308418A1
Electricity

Semiconductor Devices and Methods of Manufacture Thereof

#17 | 2010-12-09
US20100308330A1
Electricity

Methods of manufacturing resistors and structures thereof

#18 | 2010-11-25
US20100297818A1
Electricity

Semiconductor devices having pFET with SiGe gate electrode and embedded SiGe source/drain regions and methods of making the same

#19 | 2010-11-18
US20100289088A1
Electricity

Threshold voltage improvement employing fluorine implantation and adjustment oxide layer

#20 | 2010-08-05
US20100197100A1
Electricity

Semiconductor Devices and Methods of Manufacturing Thereof

#21 | 2010-08-05
US20100197093A1
Electricity

Stress optimization in dual embedded epitaxially grown semiconductor processing

#22 | 2010-06-24
US20100155854A1
Electricity

Methods of fabricating semiconductor devices and structures thereof

#23 | 2010-06-17
US20100148262A1
Electricity

Resistors and Methods of Manufacture Thereof

#24 | 2010-06-03
US20100136761A1
Electricity

Semiconductor devices and methods of manufacturing thereof

#25 | 2010-04-29
US20100102393A1
Electricity

METAL GATE TRANSISTORS

#26 | 2010-03-18
US20100065922A1
Electricity

Semiconductor devices and methods of manufacture thereof

#27 | 2010-01-14
US20100009502A1
Electricity

Semiconductor fabrication process including an SiGe rework method

#28 | 2009-12-24
US20090317957A1
Electricity

Method for forming isolation structures

#29 | 2009-12-03
US20090294986A1
Electricity

Methods of forming conductive features and structures thereof

#30 | 2009-12-03
US20090294866A1
Electricity

Transistor fabrication methods and structures thereof

#31 | 2009-11-26
US20090289379A1
Electricity

Methods of manufacturing semiconductor devices and structures thereof

#32 | 2009-10-01
US20090242989A1
Electricity

COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR DEVICE WITH EMBEDDED STRESSOR

#33 | 2009-09-10
US20090227086A1
Electricity

Threshold voltage consistency and effective width in same-substrate device groups

#34 | 2009-06-11
US20090146181A1
Electricity

INTEGRATED CIRCUIT SYSTEM EMPLOYING DIFFUSED SOURCE/DRAIN EXTENSIONS

#35 | 2009-02-12
US20090039442A1
Electricity

Semiconductor devices and methods of manufacture thereof

#36 | 2009-02-05
US20090032841A1
Electricity

Semiconductor devices and methods of manufacture thereof

#37 | 2008-12-25
US20080315267A1
Electricity

Device performance improvement using flowfill as material for isolation structures

#38 | 2008-12-11
US20080305621A1
Electricity

Channel strain engineering in field-effect-transistor

#39 | 2008-12-11
US20080303060A1
Electricity

Semiconductor devices and methods of manufacturing thereof

#40 | 2008-11-27
US20080290370A1
Electricity

Semiconductor devices having recesses filled with semiconductor materials

#41 | 2008-05-22
US20080119025A1
Electricity

Method of making a strained semiconductor device

#42 | 2008-05-22
US20080119019A1
Electricity

Semiconductor devices having pFET with SiGe gate electrode and embedded SiGe source/drain regions and methods of making the same

#43 | 2008-03-27
US20080076214A1
Electricity

Semiconductor device and method of making same

#44 | 2008-01-24
US20080017936A1
Electricity

Semiconductor device structures (gate stacks) with charge compositions

#45 | 2007-12-27
US20070295989A1
Electricity

Strained semiconductor device and method of making same

#46 | 2007-09-13
US20070210301A1
Electricity

Semiconductor devices and methods of manufacturing thereof

#47 | 2007-08-23
US20070196996A1
Electricity

CMOS devices having stress-altering material lining the isolation trenches and methods of manufacturing thereof

#48 | 2007-08-16
US20070190795A1
Electricity

Method for fabricating a semiconductor device with a high-K dielectric

#49 | 2007-06-14
US20070134861A1
Electricity

Semiconductor devices and methods of manufacture thereof

InventorID:

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