Frank Jakubowski

MEMS capacitive pressure sensors in fully depleted semiconductor on insulator (FDSOI)

Semiconductor device including buried capacitive structures and a method of forming the same

SEMICONDUCTOR STRUCTURE INCLUDING ONE OR MORE NONVOLATILE MEMORY CELLS AND METHOD FOR THE FORMATION THEREOF

Semiconductor device including buried capacitive structures and a method of forming the same

Method of forming a semiconductor device structure and semiconductor device structure

Method of forming a semiconductor device structure and semiconductor device structure

Integrated circuits with separate workfunction material layers and methods for fabricating the same

REPLACEMENT GATE COMPATIBLE eDRAM TRANSISTOR WITH RECESSED CHANNEL

Contact structure for a semiconductor device and methods of making same

Reduced spacer thickness in semiconductor device fabrication

Contact landing pads for a semiconductor device and methods of making same

Wafer edge protection

Semiconductor device comprising self-aligned contact elements and a replacement gate electrode structure

Contact landing pads for a semiconductor device and methods of making same

Contact structure for a semiconductor device and methods of making same

Methods of forming isolation structures for semiconductor devices by performing a dry chemical removal process

Methods of forming isolation structures for semiconductor devices by performing a deposition-etch-deposition sequence

Methods of forming bulk FinFET devices so as to reduce punch through leakage currents

Methods of recessing an active region and STI structures in a common etch process

Methods for fabricating semiconductor devices with isolation regions having uniform stepheights

Replacement gate compatible eDRAM transistor with recessed channel

High performance HKMG stack for gate first integration

Method of removing gate cap materials while protecting active area

Semiconductor device with DRAM bit lines made from same material as gate electrodes in non-memory regions of the device, and methods of making same

SOI semiconductor device comprising a substrate diode with reduced metal silicide leakage

Semiconductor device comprising self-aligned contact elements and a replacement gate electrode structure

Semiconductor device comprising self-aligned contact elements

STI silicon nitride cap for flat FEOL topology

Fabrication method for an integrated circuit structure

Method of forming a doped portion of a semiconductor and method of forming a transistor

Integrated Circuit Including a Memory Cell Array

Memory cell array and method of forming the same

Method of manufacturing a semiconductor device

Multi-layer gate stack structure comprising a metal layer for a FET device, and method for fabricating the same

Method for fabricating a semiconductor structure