Inventor profile of:

Sheldon Aronowitz

City:

San Jose, California

Country:

United States

Published Applications:

14

Last publication date:

2010-03-02

Top Assignees for applications by Sheldon Aronowitz

The entities that hold a legal rights for patent applications filed by inventor Aronowitz Sheldon:

Recent patent applications by Aronowitz Sheldon

Sheldon Aronowitz from San Jose, US has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2010-03-02
US11939482
-

Method of treating metal and metal salts to enable thin layer deposition in semiconductor processing

#2 | 2008-01-29
US10697506
-

Method of vaporizing and ionizing metals for use in semiconductor processing

#3 | 2006-11-07
US10123263
-

Method and apparatus for forming a memory structure having an electron affinity region

#4 | 2006-10-03
US10044864
-

Method for creating barriers for copper diffusion

#5 | 2006-08-01
US10697507
-

Vaporization and ionization of metals for use in semiconductor processing

#6 | 2006-07-25
US10804980
-

Method for growing thin films

#7 | 2006-01-24
US10698169
-

Memory device having an electron trapping layer in a high-K dielectric gate stack

#8 | 2005-11-24
US20050258475A1
Electricity

Memory device having an electron trapping layer in a high-K dielectric gate stack

#9 | 2005-08-18
US20050179138A1
Electricity

Method for creating barriers for copper diffusion

#10 | 2005-08-16
US10698167
-

Calcium doped polysilicon gate electrodes

#11 | 2005-07-19
US10643687
-

High-K dielectric gate material uniquely formed

#12 | 2005-05-24
US10313333
-

Process to minimize polysilicon gate depletion and dopant penetration and to increase conductivity

#13 | 2005-05-12
US20050098856A1
Electricity

Low dielectric constant fluorine and carbon-containing silicon oxide dielectric material characterized by improved resistance to oxidation

#14 | 2005-02-22
US9792685
-

Process for forming a low dielectric constant fluorine and carbon-containing silicon oxide dielectric material

InventorID:

4838628 ⎘