Inventor profile of:

Laurent Clavelier

City:

Grenoble

Country:

France

Published Applications:

26

Last publication date:

2013-10-17

Top Assignees for applications by Laurent Clavelier

The entities that hold a legal rights for patent applications filed by inventor Clavelier Laurent:

Recent patent applications by Clavelier Laurent

Laurent Clavelier from Grenoble, FR has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2013-10-17
US20130273683A1
Electricity

Method of fabricating an electromechanical structure including at least one mechanical reinforcing pillar

#2 | 2012-08-16
US20120206216A1
Electricity

Acoustic wave device including a surface wave filter and a bulk wave filter, and method for making same

#3 | 2012-08-16
US20120205614A1
Electricity

Method for manufacturing a very-high-resolution screen using a nanowire-based emitting anisotropic conductive film

#4 | 2012-07-26
US20120187541A1
Electricity

EPITAXIAL METHODS FOR REDUCING SURFACE DISLOCATION DENSITY IN SEMICONDUCTOR MATERIALS

#5 | 2011-08-25
US20110207293A1
Electricity

Method of producing a hybrid substrate having a continuous buried electrically insulating layer

#6 | 2011-08-18
US20110201177A1
Electricity

Method in the microelectronics fields of forming a monocrystalline layer

#7 | 2011-06-23
US20110147849A1
Electricity

Integrated circuit with electrostatically coupled MOS transistors and method for producing such an integrated circuit

#8 | 2011-01-06
US20110001184A1
Electricity

Method of adjusting the threshold voltage of a transistor by a buried trapping layer

#9 | 2010-09-30
US20100244197A1
Electricity

Epitaxial methods for reducing surface dislocation density in semiconductor materials

#10 | 2010-03-25
US20100075461A1
Electricity

Method for transferring chips onto a substrate

#11 | 2010-02-04
US20100029031A1
Performing operations; transporting

Method of fabricating a MEMS/NEMS electromechanical component

#12 | 2009-12-31
US20090325335A1
Performing operations; transporting

Heterogeneous substrate including a sacrificial layer, and a method of fabricating it

#13 | 2009-12-31
US20090321887A1
Electricity

METHOD OF FABRICATING AN ELECTROMECHANICAL STRUCTURE INCLUDING AT LEAST ONE MECHANICAL REINFORCING PILLAR

#14 | 2009-12-24
US20090317931A1
Performing operations; transporting

Method of fabricating an electromechanical device including at least one active element

#15 | 2009-12-03
US20090294822A1
Electricity

Circuit with transistors integrated in three dimensions and having a dynamically adjustable threshold voltage VT

#16 | 2009-07-02
US20090170295A1
Electricity

Manufacturing method for a semi-conductor on insulator substrate comprising a localised Ge enriched step

#17 | 2009-06-25
US20090161405A1
Physics

Data storage medium and associated method

#18 | 2009-05-14
US20090120568A1
Electricity

Method of transferring a thin film onto a support

#19 | 2009-04-16
US20090096028A1
Electricity

Transistor of the I-MOS type comprising two independent gates and method of using such a transistor

#20 | 2009-01-15
US20090017602A1
Electricity

Method for manufacturing a semiconductor-on-insulator substrate for microelectronics and optoelectronics

#21 | 2008-10-16
US20080254591A1
Electricity

Method for making a thin-film element

#22 | 2008-09-11
US20080220594A1
Electricity

Fabrication method of a mixed substrate and use of the substrate for producing circuits

#23 | 2008-08-21
US20080200001A1
Electricity

Method of producing a transistor

#24 | 2008-06-26
US20080153267A1
Electricity

Method for manufacturing a SOI substrate associating silicon based areas and GaAs based areas

#25 | 2007-12-13
US20070287257A1
Electricity

Method for producing SiGebased zones with different contents in Ge on a same substrate by condensation of germanium

#26 | 2007-12-13
US20070284625A1
Electricity

Method for producing SiGebased zones with different contents in Ge on a same substrate by condensation of germanium

InventorID:

487376 ⎘