Inventor profile of:

Ryu Nakano

City:

Sagamihara

Country:

Japan

Published Applications:

15

Last publication date:

2024-05-30

Top Assignees for applications by Ryu Nakano

The entities that hold a legal rights for patent applications filed by inventor Nakano Ryu:

Recent patent applications by Nakano Ryu

Ryu Nakano from Sagamihara, JP has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2024-05-30
US20240175124A1
Chemistry; metallurgy

CYCLICAL DEPOSITION METHODS AND STRUCTURES FORMED USING THE METHODS

#2 | 2023-04-13
US20230112490A1
Electricity

Method for depositing silicon oxide film having improved quality by PEALD using bis(diethylamino)silane

#3 | 2023-01-19
US20230017874A1
Chemistry; metallurgy

Cyclical deposition methods

#4 | 2022-07-07
US20220216059A1
Electricity

METHOD OF TREATING A SUBSTRATE

#5 | 2022-03-03
US20220068639A1
Electricity

Method and system for forming patterned structures using multiple patterning process

#6 | 2021-11-11
US20210348273A1
Chemistry; metallurgy

REACTOR SYSTEM COMPRISING A TUNING CIRCUIT

#7 | 2021-10-07
US20210313178A1
Electricity

Method for forming barrier layer and method for manufacturing semiconductor device

#8 | 2021-02-25
US20210057214A1
Electricity

Method for depositing silicon oxide film having improved quality by peald using bis(diethylamino)silane

#9 | 2015-11-05
US20150315704A1
Chemistry; metallurgy

Low-oxidation plasma-assisted process

#10 | 2015-10-08
US20150284848A1
Chemistry; metallurgy

Method for stabilizing reaction chamber pressure

#11 | 2015-09-10
US20150252479A1
Chemistry; metallurgy

Film forming apparatus, and method of manufacturing semiconductor device

#12 | 2015-04-30
US20150118846A1
Electricity

Method for trimming carbon-containing film at reduced trimming rate

#13 | 2015-03-19
US20150079311A1
Chemistry; metallurgy

Method for forming oxide film by plasma-assisted processing

#14 | 2014-12-18
US20140367359A1
Electricity

Method for controlling in-plane uniformity of substrate processed by plasma-assisted process

#15 | 2012-10-18
US20120264305A1
Electricity

Footing reduction using etch-selective layer

InventorID:

5342000 ⎘