Phoenix, Arizona
United States
30
2024-12-19
The entities that hold a legal rights for patent applications filed by inventor Li Dong:
Dong Li from Phoenix, US has applied for patents for these inventions. The list has both pending applications and granted patents:
METHOD, SYSTEM, AND APPARATUS FOR DEPOSITION OF TRANSITION METAL FILM
#2 | 2024-11-07METHOD, SYSTEM AND APPARATUS FOR SURFACE MODIFICATION
#3 | 2024-01-11METHOD FOR TREATMENT OF DEPOSITION REACTOR
#4 | 2023-09-21SYSTEMS AND METHODS FOR DEPOSITION OF MOLYBDENUM FOR SOURCE/DRAIN CONTACTS
#5 | 2023-07-27STRUCTURE AND DEVICE INCLUDING METAL CARBON NITRIDE LAYER AND METHOD OF FORMING SAME
#6 | 2023-07-20Method for treatment of deposition reactor
#7 | 2023-07-06SYSTEMS AND METHODS FOR CLEANING AND TREATING A SURFACE OF A SUBSTRATE
#8 | 2023-05-25METAL-ON-METAL DEPOSITION METHODS FOR FILLING A GAP FEATURE ON A SUBSTRATE SURFACE
#9 | 2023-05-25METAL-ON-METAL DEPOSITION METHODS FOR FILLING A GAP FEATURE ON A SUBSTRATE SURFACE
#10 | 2022-09-01METHOD FOR TREATMENT OF DEPOSITION REACTOR
#11 | 2022-07-21Methods for depositing a transition metal nitride film on a substrate by atomic layer deposition and related deposition apparatus
#12 | 2022-02-17METHODS FOR DEPOSITING A TITANIUM ALUMINUM CARBIDE FILM STRUCTURE ON A SUBSTRATE AND RELATED SEMICONDUCTOR STRUCTURES
#13 | 2021-10-21METHOD FOR FORMING A DOPED METAL CARBIDE FILM ON A SUBSTRATE AND RELATED SEMICONDUCTOR DEVICE STRUCTURES
#14 | 2021-03-04Method for depositing a material film on a substrate within a reaction chamber by a cyclical deposition process and related device structures
#15 | 2019-11-14Method of forming a doped metal carbide film on a substrate and related semiconductor device structures
#16 | 2019-07-18Method for depositing a material film on a substrate within a reaction chamber by a cyclical deposition process and related device structures
#17 | 2019-01-03Methods for depositing a transition metal nitride film on a substrate by atomic layer deposition and related deposition apparatus
#18 | 2017-06-01SILANE AND BORANE TREATMENTS FOR TITANIUM CARBIDE FILMS
#19 | 2016-12-29SYSTEM FOR TREATMENT OF DEPOSITION REACTOR
#20 | 2016-07-07Silane and borane treatments for titanium carbide films
#21 | 2016-04-28METHOD AND SYSTEM FOR TREATMENT OF DEPOSITION REACTOR
#22 | 2015-06-25Silane and borane treatments for titanium carbide films
#23 | 2014-09-18Silane and borane treatments for titanium carbide films
#24 | 2014-08-07Method for treatment of deposition reactor
#25 | 2014-05-08Atomic layer deposition of metal carbide films using aluminum hydrocarbon compounds
#26 | 2014-01-09Plasma-enhanced atomic layer deposition of conductive material over dielectric layers
#27 | 2011-02-03Deposition of ruthenium or ruthenium dioxide
#28 | 2010-08-05Plasma-enhanced atomic layers deposition of conductive material over dielectric layers
#29 | 2009-12-24ATOMIC LAYER DEPOSITION OF METAL CARBIDE FILMS USING ALUMINUM HYDROCARBON COMPOUNDS
#30 | 2009-11-12Plasma-enhanced pulsed deposition of metal carbide films
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