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Inventor profile of:

Frederic Allibert

City:

Grenoble

Country:

France

Published Applications:

Last publication date:

2026-01-22

Top Assignees for applications by Frederic Allibert

The entities that hold a legal rights for patent applications filed by inventor Allibert Frederic:

SOITEC 15 Bernin, France
S.O.I.TEC SILICON ON INSULATOR TECHNOLOGIES 6 Bernin, France
Commissariat à l'Énergie Atomique 2 Paris, France
S.O.I Tec Silicon on Insulator Technologies 2 Bernin, France
SOITEC 2 Crolles Cedex, France
Commissariat A L'Energie Atomique Et Aux Energies Alternatives 1 Paris, France
COMMISSARIAT À L'ENERGIE ATOMIQUE ET AUX ÉNERGIES ALTERNATIVES 1 Paris, France
Commissariat à I'Énergie Atomique 1 Paris, France

Recent patent applications by Allibert Frederic

Frederic Allibert from Grenoble, FR has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2026-01-22

US20260026321A1

Electricity

SEMICONDUCTOR STRUCTURE FOR DIGITAL AND RADIOFREQUENCY APPLICATIONS, AND METHOD FOR MANUFACTURING SUCH A STRUCTURE

#2 | 2023-07-06

US20230215760A1

Electricity

METHOD FOR MANUFACTURING A SEMICONDUCTOR-ON-INSULATOR SUBSTRATE FOR RADIOFREQUENCY APPLICATIONS

#3 | 2023-01-05

US20230005787A1

Electricity

METHOD FOR FORMING A HANDLING SUBSTRATE FOR A COMPOSITE STRUCTURE INTENDED FOR RF APPLICATIONS AND HANDLING SUBSTRATE

#4 | 2022-11-10

US20220359272A1

Electricity

Semiconductor structure comprising a buried porous layer for RF applications

#5 | 2022-09-22

US20220301847A1

Electricity

SUPPORT FOR A SEMICONDUCTOR STRUCTURE

#6 | 2022-03-10

US20220076993A1

Electricity

SEMICONDUCTOR STRUCTURE FOR DIGITAL AND RADIOFREQUENCY APPLICATIONS, AND METHOD FOR MANUFACTURING SUCH A STRUCTURE

#7 | 2022-03-10

US20220076992A1

Electricity

SEMICONDUCTOR STRUCTURE FOR DIGITAL AND RADIOFREQUENCY APPLICATIONS

#8 | 2021-06-17

US20210183691A1

Electricity

SUBSTRATE FOR AN INTEGRATED RADIOFREQUENCY DEVICE, AND PROCESS FOR MANUFACTURING SAME

#9 | 2021-02-25

US20210057635A1

Electricity

Hybrid structure for surface acoustic wave device and associated production method

#10 | 2021-01-28

US20210028057A1

Electricity

Substrate for radiofrequency applications and associated manufacturing method

#11 | 2020-05-28

US20200169222A1

Electricity

Method for minimizing distortion of a signal in a radiofrequency circuit

#12 | 2014-08-14

US20140225182A1

Electricity

SUBSTRATE HAVING A CHARGED ZONE IN AN INSULATING BURIED LAYER

#13 | 2014-03-27

US20140084290A1

Electricity

Manufacturing method for a semiconductor on insulator type substrate for radiofrequency applications

#14 | 2014-01-16

US20140015023A1

Electricity

Substrate having a charged zone in an insulating buried layer

#15 | 2013-05-30

US20130134547A1

Electricity

Locally passivated germanium-on-insulator substrate

#16 | 2011-01-20

US20110012200A1

Electricity

Substrate having a charged zone in an insulating buried layer

#17 | 2010-12-23

US20100323496A1

Electricity

Process for manufacturing a composite substrate

#18 | 2010-07-29

US20100188094A1

Physics

Method and apparatus for measuring a lifetime of charge carriers

#19 | 2010-07-29

US20100187649A1

Electricity

Charge reservoir structure

#20 | 2010-06-17

US20100148322A1

Electricity

Composite substrate and method of fabricating the same

#21 | 2010-03-04

US20100052104A1

Electricity

Method for fabricating a locally passivated germanium-on-insulator substrate

#22 | 2008-10-30

US20080268615A1

Electricity

Treatment of a Germanium Layer Bonded with a Substrate

#23 | 2007-11-08

US20070257301A1

Electricity

Multi-gate FET with multi-layer channel

#24 | 2007-07-26

US20070173033A1

Electricity

Method of fabricating a composite substrate with improved electrical properties

#25 | 2007-07-26

US20070170503A1

Electricity

Composite substrate and method of fabricating the same

#26 | 2006-09-14

US20060201907A1

Electricity

Treatment of the working layer of a multilayer structure

InventorID:

611032 ⎘