Meng Ding

System and method for manufacturing self-aligned STI with single poly

System and method for manufacturing self-aligned STI with single poly

Memory Device with Charge Trap

Self-aligned STI with single poly for manufacturing a flash memory device

Flash memory programming and verification with reduced leakage current

Two-bit memory cell having conductive charge storage segments and method for fabricating same

Memory device and methods for its fabrication

Memory device and methods for its fabrication

Negative wordline bias for reduction of leakage current during flash memory operation

INTEGRATED CIRCUIT SYSTEM WITH MEMORY SYSTEM

MEMORY SYSTEM WITH DEPLETION GATE

MEMORY SYSTEM WITH SELECT GATE ERASE

Memory cell system with charge trap

Flash memory cell structure for increased program speed and erase speed

Method for determining wordline critical dimension in a memory array and related structure

MEMORY CELL SYSTEM WITH GRADIENT CHARGE ISOLATION

MEMORY CELL SYSTEM WITH NITRIDE CHARGE ISOLATION

Memory cell system with multiple nitride layers

Memory cell system with charge trap

Methods for erasing memory devices and multi-level programming memory device

Methods for erasing and programming memory devices

Flash memory programming and verification with reduced leakage current

Memory cell system using silicon-rich nitride

Read-only memory array with dielectric breakdown programmability

Method for making a magnetoresistive read head having a pinned layer width greater than the free layer stripe height