Milpitas, California
United States
72
2026-02-12
The entities that hold a legal rights for patent applications filed by inventor Chen Hanhong:
Hanhong Chen from Milpitas, US has applied for patents for these inventions. The list has both pending applications and granted patents:
Methods Of Operating A Spatial Deposition Tool
#2 | 2026-01-01PLASMA SHOWERHEAD ASSEMBLY AND METHOD OF REDUCING DEFECTS
#3 | 2025-11-20PLASMA-ENHANCED SILICON NITRIDE DEPOSITION
#4 | 2025-10-09PLASMA SHOWERHEAD ASSEMBLY
#5 | 2025-09-11METHODS OF DEPOSITING SILICON NITRIDE
#6 | 2025-09-11METHODS OF DEPOSITING SILICON NITRIDE
#7 | 2025-07-31PLASMA SHOWERHEAD TREATMENT METHODS
#8 | 2025-07-24METHODS OF OPERATING A SPATIAL DEPOSITION TOOL
#9 | 2025-05-22PLASMA SHOWERHEAD ASSEMBLY AND METHOD OF REDUCING DEFECTS
#10 | 2025-05-22PLASMA SHOWERHEAD ASSEMBLY AND METHOD OF REDUCING DEFECTS
#11 | 2025-03-13METHODS OF FORMING SILICON NITRIDE FILMS
#12 | 2025-01-30GAS DISTRIBUTION ASSEMBLIES FOR SEMICONDUCTOR DEVICES
#13 | 2024-10-24Dithering or dynamic offsets for improved uniformity
#14 | 2023-11-16METHODS FOR CONTROLLING PULSE SHAPE IN ALD PROCESSES
#15 | 2023-10-05PLASMA SHOWERHEAD WITH IMPROVED UNIFORMITY
#16 | 2023-08-10PEALD TITANIUM NITRIDE WITH DIRECT MICROWAVE PLASMA
#17 | 2023-07-20PEALD nitride films
#18 | 2022-12-08NON-CONFORMAL PLASMA INDUCED ALD GAPFILL
#19 | 2022-12-08Apparatus For Single Chamber Deposition And Etch
#20 | 2022-10-13Machine learning based smart process recipe builder to improve azimuthal flow and thickness uniformity
#21 | 2021-06-03Plasma source for rotating susceptor
#22 | 2021-03-25PEALD nitride films
#23 | 2021-03-25Methods for controlling a flow pulse shape
#24 | 2021-03-25Dithering or dynamic offsets for improved uniformity
#25 | 2021-02-18PEALD titanium nitride with direct microwave plasma
#26 | 2020-04-30Complementary pattern station designs
#27 | 2020-03-19Methods Of Operating A Spatial Deposition Tool
#28 | 2020-02-27Methods Of Operating A Spatial Deposition Tool
#29 | 2019-10-31Methods to deposit flowable (gap-fill) carbon containing films using various plasma sources
#30 | 2019-08-22Method of forming silicon nitride films using microwave plasma
#31 | 2018-11-15Plasma source for rotating susceptor
#32 | 2016-05-12DRAM MIMCAP Stack with MoO2 Electrode
#33 | 2015-08-13Methods to improve electrical performance of ZrO2 based high-K dielectric materials for DRAM applications
#34 | 2015-05-21DRAM MIM capacitor using non-noble electrodes
#35 | 2015-03-26DRAM MIM capacitor using non-noble electrodes
#36 | 2014-07-03High work function, manufacturable top electrode
#37 | 2014-07-03High work function, manufacturable top electrode
#38 | 2014-03-20High temperature ALD process of metal oxide for DRAM applications
#39 | 2014-03-20High temperature ALD process for metal oxide for DRAM applications
#40 | 2013-12-12Enhanced non-noble electrode layers for DRAM capacitor cell
#41 | 2013-12-05Integration of non-noble DRAM electrode
#42 | 2013-11-12Enhanced non-noble electrode layers for DRAM capacitor cell
#43 | 2013-10-31Method for producing MIM capacitors with high K dielectric materials and non-noble electrodes
#44 | 2013-10-17System and method for step coverage measurement
#45 | 2013-09-10Integration of non-noble DRAM electrode
#46 | 2013-08-22High performance dielectric stack for DRAM capacitor
#47 | 2013-06-20Method for fabricating a DRAM capacitor
#48 | 2013-06-06High performance dielectric stack for DRAM capacitor
#49 | 2013-06-06Semiconductor stacks including catalytic layers
#50 | 2013-06-06High performance dielectric stack for DRAM capacitor
#51 | 2013-05-23Band gap improvement in DRAM capacitors
#52 | 2013-05-16Blocking layers for leakage current reduction in DRAM devices
#53 | 2013-05-16Top electrode templating for DRAM capacitor
#54 | 2013-05-16Adsorption site blocking method for co-doping ALD films
#55 | 2013-05-16Adsorption site blocking method for co-doping ALD films
#56 | 2013-05-16Top electrode templating for DRAM capacitor
#57 | 2013-05-09Blocking layers for leakage current reduction in DRAM devices
#58 | 2013-05-09Blocking layers for leakage current reduction in DRAM devices
#59 | 2013-04-18Enhanced work function layer supporting growth of rutile phase titanium oxide
#60 | 2013-04-18Asymmetric MIM capacitor for DRAM devices
#61 | 2013-03-21Inexpensive electrode materials to facilitate rutile phase titanium oxide
#62 | 2013-03-21Electrode Treatments for Enhanced DRAM Performance
#63 | 2013-03-21Yttrium and titanium high-k dielectric films
#64 | 2013-03-21Single-sided non-noble metal electrode hybrid MIM stack for DRAM devices
#65 | 2013-03-21Band gap improvement in DRAM capacitors
#66 | 2013-03-21Electrode Treatments for Enhanced DRAM Performance
#67 | 2013-03-21Yttrium and titanium high-k dielectric films
#68 | 2013-03-07Molybdenum oxide top electrode for DRAM capacitors
#69 | 2013-02-21Titanium based high-K dielectric films
#70 | 2013-02-14Inexpensive electrode materials to facilitate rutile phase titanium oxide
#71 | 2012-07-05Fabrication of semiconductor stacks with ruthenium-based materials
#72 | 2012-06-21Methods for forming high-K crystalline films and related devices
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