Sunnyvale, California
United States
62
2017-08-22
The entities that hold a legal rights for patent applications filed by inventor van Schravendijk Bart:
Bart van Schravendijk from Sunnyvale, US has applied for patents for these inventions. The list has both pending applications and granted patents:
Densification of dielectric film using inductively coupled high density plasma
#2 | 2017-08-10Systems and methods for creating airgap seals using atomic layer deposition and high density plasma chemical vapor deposition
#3 | 2016-11-10Inhibitor plasma mediated atomic layer deposition for seamless feature fill
#4 | 2016-08-02Systems and methods for eliminating seams in atomic layer deposition of silicon dioxide film in gap fill applications
#5 | 2016-04-21Air gap spacer integration for improved fin device performance
#6 | 2016-02-09CVD flowable gap fill
#7 | 2015-08-27Inhibitor plasma mediated atomic layer deposition for seamless feature fill
#8 | 2014-05-22Method for depositing a chlorine-free conformal sin film
#9 | 2014-04-01Premetal dielectric integration process
#10 | 2014-02-20DEFECT REDUCTION IN PLASMA PROCESSING
#11 | 2014-01-23Systems and methods for at least partially converting films to silicon oxide and/or improving film quality using ultraviolet curing in steam and densification of films using UV curing in ammonia
#12 | 2013-12-26Dual plenum, axi-symmetric showerhead with edge-to-center gas delivery
#13 | 2013-10-15PECVD flowable dielectric gap fill
#14 | 2013-09-05Flowable oxide film with tunable wet etch rate
#15 | 2013-07-25Method for depositing a chlorine-free conformal sin film
#16 | 2013-07-04In-situ deposition of film stacks
#17 | 2013-04-30Protective self-aligned buffer layers for damascene interconnects
#18 | 2013-02-14Conformal doping via plasma activated atomic layer deposition and conformal film deposition
#19 | 2012-11-27Protective self-aligned buffer layers for damascene interconnects
#20 | 2012-11-01Hardmask materials
#21 | 2012-10-30Multistep method of depositing metal seed layers
#22 | 2012-08-14UV treatment of etch stop and hard mask films for selectivity and hermeticity enhancement
#23 | 2012-06-14BOTTOM UP FILL IN HIGH ASPECT RATIO TRENCHES
#24 | 2012-06-07PECVD DEPOSITION OF SMOOTH POLYSILICON FILMS
#25 | 2012-05-08Methods for reducing UV and dielectric diffusion barrier interaction
#26 | 2012-02-28Reducing UV and dielectric diffusion barrier interaction through the modulation of optical properties
#27 | 2012-02-16Systems and methods for at least partially converting films to silicon oxide and/or improving film quality using ultraviolet curing in steam and densification of films using UV curing in ammonia
#28 | 2011-11-15Atomic layer removal process with higher etch amount
#29 | 2011-10-04Protection of Cu damascene interconnects by formation of a self-aligned buffer layer
#30 | 2011-09-29Smooth silicon-containing films
#31 | 2011-09-29In-situ deposition of film stacks
#32 | 2011-08-23Methods of forming moisture barrier for low K film integration with anti-reflective layers
#33 | 2011-07-19Atomic layer removal for high aspect ratio gapfill
#34 | 2011-06-23Gap fill integration
#35 | 2011-06-09Hardmask materials
#36 | 2011-06-09Hardmask materials
#37 | 2011-05-26Remote plasma processing of interface surfaces
#38 | 2011-05-19Carbon containing low-k dielectric constant recovery using UV treatment
#39 | 2011-05-12UV and reducing treatment for K recovery and surface clean in semiconductor processing
#40 | 2011-02-24UV TREATMENT FOR CARBON-CONTAINING LOW-K DIELECTRIC REPAIR IN SEMICONDUCTOR PROCESSING
#41 | 2010-12-28Interfacial layers for electromigration resistance improvement in damascene interconnects
#42 | 2010-12-16REMOTE PLASMA PROCESSING OF INTERFACE SURFACES
#43 | 2010-12-16Remote plasma processing of interface surfaces
#44 | 2010-12-09Interfacial capping layers for interconnects
#45 | 2010-10-21APPARATUS FOR UV DAMAGE REPAIR OF LOW K FILMS PRIOR TO COPPER BARRIER DEPOSITION
#46 | 2010-10-14UV treatment for carbon-containing low-k dielectric repair in semiconductor processing
#47 | 2010-09-21Interfacial layers for electromigration resistance improvement in damascene interconnects
#48 | 2010-06-01Protective self-aligned buffer layers for damascene interconnects
#49 | 2010-06-01Protective self-aligned buffer layers for damascene interconnects
#50 | 2010-04-27Method of improving adhesion between two dielectric films
#51 | 2010-04-22Method for improving process control and film conformality of PECVD film
#52 | 2010-03-23Multistep method of depositing metal seed layers
#53 | 2010-01-19Interfacial layers for electromigration resistance improvement in damascene interconnects
#54 | 2010-01-05Methods of forming moisture barrier for low k film integration with anti-reflective layers
#55 | 2009-11-24UV treatment of STI films for increasing tensile stress
#56 | 2009-11-24Method of improving adhesion between two dielectric films
#57 | 2009-11-19Protective layer to enable damage free gap fill
#58 | 2008-07-08Protection of Cu damascene interconnects by formation of a self-aligned buffer layer
#59 | 2006-06-27Gap fill for high aspect ratio structures
#60 | 2006-05-30Applications and methods of making nitrogen-free anti-reflective layers for semiconductor processing
#61 | 2005-12-06Method of improving adhesion between two dielectric films
#62 | 2005-01-25Process for depositing F-doped silica glass in high aspect ratio structures
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