Gyeonggi-do
South Korea
30
2013-02-14
The entities that hold a legal rights for patent applications filed by inventor Lee Jang Eun:
Jang Eun Lee from Gyeonggi-do, KR has applied for patents for these inventions. The list has both pending applications and granted patents:
Magnetic tunneling junction devices, memories, memory systems, and electronic devices
#2 | 2012-09-20Magnetic tunneling junction devices, memories, electronic systems, and memory systems, and methods of fabricating the same
#3 | 2011-12-22Resistive memory devices including selected reference memory cells operating responsive to read operations
#4 | 2011-08-11Memory devices including multi-bit memory cells having magnetic and resistive memory elements and related methods
#5 | 2010-09-16Methods of forming resistive memory devices
#6 | 2009-08-27Semiconductor devices having resistive memory elements
#7 | 2009-05-28Resistive memory devices including selected reference memory cells operating responsive to read operations
#8 | 2009-04-23Semiconductor devices having phase change memory cells, electronic systems employing the same and methods of fabricating the same
#9 | 2009-03-12Resistive memory devices including selected reference memory cells
#10 | 2009-03-12Resistive memory devices and methods of forming resistive memory devices
#11 | 2009-01-22Method of manufacturing semiconductor device having transition metal oxide layer and related device
#12 | 2008-09-04Bipolar Resistive Memory Device Having Tunneling Layer
#13 | 2008-07-31Memory devices including multi-bit memory cells having magnetic and resistive memory elements and related methods
#14 | 2008-06-26Magnetic random access memory device and method of forming the same
#15 | 2008-05-29Nonvolatile memory devices using variable resistors as storage elements and methods of operating the same
#16 | 2008-03-13Methods of programming a resistive memory device
#17 | 2007-10-04Methods of Forming Magnetic Random Access Memory Devices Including Contact Plugs Between Magnetic Tunnel Junction Structures and Substrates
#18 | 2007-09-06Magnetic Random Access Memory Devices Including Contact Plugs Between Magnetic Tunnel Junction Structures and Substrates and Related Methods
#19 | 2007-07-12Multi-state resistive memory element, multi-bit resistive memory cell, operating method thereof, and data processing system using the memory element
#20 | 2007-06-28Methods of forming magnetic random access memory devices having titanium-rich lower electrodes with oxide layer and oriented tunneling barrier
#21 | 2007-06-21Resistive memory devices including selected reference memory cells
#22 | 2007-05-10Resistive memory devices including selected reference memory cells and methods of operating the same
#23 | 2007-02-22Magnetic memory device and method of fabricating the same
#24 | 2007-02-22MAGNETIC TUNNEL JUNCTION STRUCTURE HAVING AN OXIDIZED BUFFER LAYER AND METHOD OF FABRICATING THE SAME
#25 | 2006-02-09Magnetic random access memory devices including contact plugs between magnetic tunnel junction structures and substrates and related methods
#26 | 2006-02-09Methods for sputtering a target material by intermittently applying a voltage thereto and related apparatus, and methods of fabricating a phase-changeable memory device employing the same
#27 | 2006-01-26Apparatus for depositing a thin film on a substrate
#28 | 2005-12-01Semiconductor devices having phase change memory cells, electronic systems employing the same and methods of fabricating the same
#29 | 2005-02-17Magnetic tunnel junction structure having an oxidized buffer layer and method of fabricating the same
#30 | 2005-01-13Magnetic random access memory devices having titanium-rich lower electrodes with oxide layer and oriented tunneling barrier
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