Bert Jongbloed

SEMICONDUCTOR PROCESSING APPARATUS

SEMICONDUCTOR PROCESSING APPARATUS

METHOD OF FORMING VANADIUM NITRIDE-CONTAINING LAYER AND STRUCTURE COMPRISING THE SAME

METHOD OF DETERMINING END POINT OF CHAMBER CLEANING PROCESS

METHOD AND APPARATUSES FOR TEMPERATURE INDEXED ALD

METHOD FOR IMPROVED SILICON DEPOSITION

VERTICLE FURNACE FOR PROCESSING A PLURALITY OF SUBSTRATES AND METHOD OF PROCESSING

CHEMICAL VAPOR DEPOSITION FURNACE WITH A CLEANING GAS SYSTEM TO PROVIDE A CLEANING GAS

SYSTEMS AND METHODS FOR MONITORING OF A CONTROLLED ENVIRONMENT IN A SUBSTRATE PROCESSING SYSTEM

GAS INJECTOR

METHOD OF FORMING VANADIUM NITRIDE-CONTAINING LAYER AND STRUCTURE COMPRISING THE SAME

WAFER BOAT AND A METHOD FOR FORMING LAYER ON A PLURALITY OF SUBSTRATES

METHOD OF FORMING A SILICON COMPRISING LAYER

Method and apparatus for filling a gap

METHOD FOR FORMING A LAYER PROVIDED WITH SILICON

METHOD AND WAFER PROCESSING FURNACE FOR FORMING AN EPITAXIAL STACK OF SEMICONDUCTOR EPITAXIAL LAYERS

METHOD AND WAFER PROCESSING FURNACE FOR FORMING AN EPITAXIAL STACK ON A PLURALITY OF SUBSTRATES

METHOD AND APPARATUS FOR FILLING A GAP

SUBSTRATE PROCESSING APPARATUS AND METHOD FOR PROCESSING SUBSTRATES

Method for forming a structure with a hole

Chemical vapor deposition furnace with a cleaning gas system to provide a cleaning gas

CHEMICAL VAPOR DEPOSPITION FURNACE FOR DEPOSITING FILMS

Sequential infiltration synthesis apparatus and a method of forming a patterned structure

Method for forming a layer provided with silicon

SYSTEM AND METHODS FOR DIRECT LIQUID INJECTION OF VANADIUM PRECURSORS

METHODS AND SYSTEMS FOR DELIVERY OF VANADIUM COMPOUNDS

Methods and systems for depositing a layer comprising vanadium, nitrogen, and a further element

Method and apparatus for filling a gap

Method of forming vanadium nitride-containing layer

Method and apparatus for filling a gap

Method for providing a semiconductor device with silicon filled gaps

Sequential infiltration synthesis apparatus and a method of forming a patterned structure

Method for forming a structure with a hole

Substrate processing apparatus and method for processing substrates

Method and apparatus for filling a gap

TEMPERATURE-INDEXED THIN FILM DEPOSITION REACTORS

Substrate rack and a substrate processing system and method

Substrate processing apparatus and method

Method and apparatus for filling a gap

Method and structure for wet etch utilizing etch protection layer comprising boron and carbon

Forming semiconductor device by providing an amorphous silicon core with a hard mask layer

Semiconductor device with amorphous silicon filled gaps and methods for forming

Sequential infiltration synthesis apparatus and a method of forming a patterned structure

Deposition of charge trapping layers

Method of forming a structure on a substrate

Method and apparatus for filling a gap

Method and apparatus for filling a gap

Semiconductor device fabrication using etch stop layer

METHODS AND APPARATUSES FOR TEMPERATURE-INDEXED THIN FILM DEPOSITION

REACTIVE CURING PROCESS FOR SEMICONDUCTOR SUBSTRATES

Cyclic doped aluminum nitride deposition

METHOD FOR FORMING OXIDE LAYER BY OXIDIZING SEMICONDUCTOR SUBSTRATE WITH HYDROGEN PEROXIDE

Cyclic aluminum oxynitride deposition

Process for densifying nitride film

Reactive curing process for semiconductor substrates

Deposition of boron and carbon containing materials

Method and system for delivering hydrogen peroxide to a semiconductor processing chamber

Cyclic aluminum nitride deposition in a batch reactor