Patent application title:

CHIP PACKAGE AND PROCESS THEREOF

Publication number:

US20080185710A1

Publication date:
Application number:

12/100,631

Filed date:

2008-04-10

Abstract:

The chip package and the process thereof are disclosed. The chip package comprises a chip and a rigid cover. The chip has a plurality of bond pads formed thereon. The rigid cover is located on the chip and has a plurality of openings formed therein, wherein the openings expose the bond pads on the chip respectively.

Inventors:

Assignee:

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Classification:

H01L23/04 »  CPC main

Details of semiconductor or other solid state devices; Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls

H01L21/481 »  CPC further

Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof; Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer; Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups -; Insulating or insulated parts, e.g. mountings, containers, diamond heatsinks Insulating layers on insulating parts, with or without metallisation

H01L21/4846 »  CPC further

Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof; Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer; Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups -; Conductive parts Leads on or in insulating or insulated substrates, e.g. metallisation

H01L23/3114 »  CPC further

Details of semiconductor or other solid state devices; Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed the device being a chip scale package, e.g. CSP

H01L23/481 »  CPC further

Details of semiconductor or other solid state devices; Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor Internal lead connections, e.g. via connections, feedthrough structures

H01L23/49805 »  CPC further

Details of semiconductor or other solid state devices; Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered constructions; Leads, on insulating substrates, the leads being also applied on the sidewalls or the bottom of the substrate, e.g. leadless packages for surface mounting

H01L23/552 »  CPC further

Details of semiconductor or other solid state devices Protection against radiation, e.g. light or electromagnetic waves

H01L24/02 »  CPC further

Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto; Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto Bonding areas ; Manufacturing methods related thereto

H01L24/05 »  CPC further

Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto; Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto; Bonding areas ; Manufacturing methods related thereto; Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area

H01L24/08 »  CPC further

Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto; Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto; Bonding areas ; Manufacturing methods related thereto; Structure, shape, material or disposition of the bonding areas after the connecting process of an individual bonding area

H01L24/16 »  CPC further

Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto; Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto; Bump connectors ; Manufacturing methods related thereto; Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector

H01L27/14618 »  CPC further

Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Devices controlled by radiation; Imager structures; Structural or functional details thereof Containers

H01L2224/02371 »  CPC further

Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by; Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto; Bonding areas; Manufacturing methods related thereto; Redistribution layers [RDL] for bonding areas; Disposition of the redistribution layers connecting the bonding area on a surface of the semiconductor or solid-state body with another surface of the semiconductor or solid-state body

H01L2224/0401 »  CPC further

Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by; Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto; Bonding areas; Manufacturing methods related thereto; Structure, shape, material or disposition of the bonding areas prior to the connecting process Bonding areas specifically adapted for bump connectors, e.g. under bump metallisation [UBM]

H01L2224/16 »  CPC further

Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by; Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto; Bump connectors; Manufacturing methods related thereto; Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector

H01L2924/01013 »  CPC further

Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by; Chemical elements Aluminum [Al]

H01L2924/01029 »  CPC further

Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by; Chemical elements Copper [Cu]

H01L2924/01033 »  CPC further

Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by; Chemical elements Arsenic [As]

H01L2924/01075 »  CPC further

Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by; Chemical elements Rhenium [Re]

H01L2924/01082 »  CPC further

Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by; Chemical elements Lead [Pb]

H01L2924/014 »  CPC further

Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by; Alloys Solder alloys

H01L2924/14 »  CPC further

Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by; Details of semiconductor or other solid state devices to be connected; Device type Integrated circuits

H01L2924/15311 »  CPC further

Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by; Details of package parts other than the semiconductor or other solid state devices to be connected; Die mounting substrate; Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA

H01L2924/16195 »  CPC further

Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by; Details of package parts other than the semiconductor or other solid state devices to be connected; Cap; Shape Flat cap [not enclosing an internal cavity]

H01L2924/16235 »  CPC further

Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by; Details of package parts other than the semiconductor or other solid state devices to be connected; Cap; Disposition Connecting to a semiconductor or solid-state bodies, i.e. cap-to-chip

H01L2924/12042 »  CPC further

Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by; Details of semiconductor or other solid state devices to be connected; Device type; Passive devices, e.g. 2 terminal devices; Optical Diode LASER

H01L2924/00 »  CPC further

Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by

H01L2924/0001 »  CPC further

Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by Technical content checked by a classifier

H01L2224/02 »  CPC further

Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by; Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto Bonding areas; Manufacturing methods related thereto

H01L23/498 IPC

Details of semiconductor or other solid state devices; Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered constructions Leads, on insulating substrates,

Description

CROSS-REFERENCE TO RELATED APPLICATION

This application is a divisional application of, and claims the priority benefit of, U.S. application Ser. No. 10810,436 filed on Mar. 25, 2004. The entirety of the above-mentioned patent application is hereby incorporated by reference herein and made a part of this specification.

BACKGROUND OF THE INVENTION

1. Field of the Invention

This invention generally relates to a chip package and a process thereof, and more particularly to a chip package having a rigid cover on the active surface of the chip and a process thereof.

2. Description of Related Art

In the semiconductor industry, integrated circuit (IC) manufacturing includes 3 steps—design, process, and packaging. Chips are manufactured by the steps of making wafer, designing the circuit, making the mask, sawing the wafer and so on. Each chip is electrically connected to the external circuit via the bond pads on the chip. Then the insulating material is optionally used to package the chip. The purposes of packaging are to protect the chip from moisture, heat and noise, and to provide the electrical connection between the chip and the external circuit such as printed circuit board (PCB) or other carriers.

As the IC packaging technology advances, the package is getting smaller. Among the IC packaging types, chip scale package (CSP) is one of the package technologies that the length of the package is smaller than 1.2 times of the length of the chip inside the package, or (the chip area/package area) is smaller than 80% while the pitch of the pins of the package is smaller than 1 mm. Based on the material and the structures, CSP includes rigid interposer type, flex interposer type, custom lead frame type, wafer level type and so on.

Unlike the packaging technology for single chip, the wafer level package focuses on packaging wafer in order to simplify the chip packaging process. Hence, after the integrated circuits have been manufactured on the wafer, the whole wafer can be packaged. Then the wafer sawing can be performed to form a plurality of chips from the wafer.

SUMMARY OF THE INVENTION

An object of the present invention is to provide a chip package having a better structural strength, thermal conductive efficiency, and anti-electromagnetic interference ability.

The present invention provides a chip package, comprising a chip and a rigid cover. The chip has a plurality of bond pads formed thereon. The rigid cover is located on the chip and has a plurality of openings formed therein, wherein the openings expose the bond pads on the chip respectively.

In a preferred embodiment, the chip package further comprises an adhesive layer disposed between the chip and the rigid cover, wherein the rigid cover is adhered to the chip via the adhesive layer.

In a preferred embodiment, the chip package further comprises a plurality of contacts electrically connected to the bond pads respectively.

In a preferred embodiment, the contacts include conductive bumps.

In a preferred embodiment, the contacts are connected to the PCB.

In a preferred embodiment, the heights of the contacts relative to a top surface of the chip are larger than the height of the rigid cover to the top surface.

In a preferred embodiment, the chip includes a redistribution layer on the chip to form the bond pads.

In a preferred embodiment, the material of the rigid cover includes a conducting material, an insulating material, or a transparent material.

In a preferred embodiment, the bond pads are disposed on the chip as an array.

In a preferred embodiment, the bond pads are disposed in an interior region of the chip.

According to the chip package and the process thereof, a rigid cover is disposed on the active surface of the chip to protect the active surface of the chip and enhance the structural strength of the chip package. Further, if the material of the rigid cover is a thermal conductive material such as Cu or Al alloy, the heat-spread ability of the chip package can be enhanced. If the rigid cover is made of an electrical conductive material and electrically connected to the ground of the chip package, the electromagnetic interference (EMI) to the chip package can be reduced. It should be noted that the chip packaging process could form a plurality of the terminal pads on the backside of the chip so that the chip package can be connected to the PCB or substrate via these terminal pads.

The above is a brief description of some deficiencies in the prior art and advantages of the present invention. Other features, advantages and embodiments of the invention will be apparent to those skilled in the art from the following description, accompanying drawings and appended claims.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1A is a top view of the first chip package in accordance with the first embodiment of the present invention.

FIG. 1B is a cross-sectional view of the first chip package of FIG. 1A along I-I′ line.

FIG. 1C is a cross-sectional view of the first chip package of FIG. 1A connected to a printed circuit board.

FIG. 2A is a top view of the second chip package in accordance with the first embodiment of the present invention.

FIG. 2B is a cross-sectional view of the second chip package of FIG. 2A along II-II′ line.

FIG. 2C is a cross-sectional view of the second chip package of FIG. 2A connected to a printed circuit board.

FIGS. 3A-3F show top views of the progression steps of the chip packaging process in accordance with the second embodiment of the present invention.

FIGS. 4A-4F show cross-sectional views of the chip packaging process of FIGS. 3A-3F along III-III′ line.

FIG. 5 is a cross-sectional view of the chip package of FIG. 3F connected to a printed circuit board.

FIG. 6 is a cross-sectional view of another chip package connected to a printed circuit board in accordance with a second embodiment of the present invention.

DESCRIPTION OF THE PREFERRED EMBODIMENTS

FIG. 1A is a top view of the first chip package in accordance with the first embodiment of the present invention. FIG. 1B is a cross-sectional view of the first chip package of FIG. 1A along I-I′ line. Referring to FIGS. 1A and 1B, the chip package 100 includes a chip 110, a rigid cover 120, and an adhesive layer 130. The chip 110 is one of a plurality of unsawed chips of the wafer (not shown). The chip 110 has a rectangular shape having an active surface 112 and a plurality of bond pads 114. The bond pads 114 are disposed on the circumference of the active surface 112. The periphery of the rigid cover 120 is adhered to the active surface 112 via the adhesive layer 130. The bond pads 114 are disposed outside the periphery of the rigid cover 120.

FIG. 1C is a cross-sectional view of the first chip package of FIG. 1A connected to a printed circuit board. Referring to FIGS. 1A, 1B, and 1C, a plurality of contacts 116 such as conductive bumps are disposed on the bond pads respectively. The heights of the contacts 116 relative to the active surface 112 are larger than the height of the rigid cover 120 relative to the active surface 112 so that the chip package 100 can be connected to the PCB 140 via the contacts 116. The PCB 140 has a plurality of contact pads 142. The bond pads 114 of the chip package 100 are electrically connected to the contact pads 142 of the PCB 140 via the contacts 116. Further, one can control the heights of the contacts 116 relative to the active surface 112 or the height of the rigid cover 120 relative to the active surface 112 to optionally make the rigid cover 120 contact or not contact the PCB 140. For thermal dissipation or electric characteristic consideration, the cover 120 can be structurally or electrically connected to the PCB 140. In FIGS. 1A-1C, the bond pads 114 are not limited to be disposed around the circumference of the active surface 112. The bond pads can also be disposed on one side or two sides (adjacent or opposite) of the active surface.

FIG. 2A is a top view of the second chip package in accordance with the first embodiment of the present invention. FIG. 2B is a cross-sectional view of the second chip package of FIG. 2A along II-II′ line. Referring to FIGS. 2A and 2B, the chip 210 of the second chip package 200 has a plurality of bond pads 214 disposed as an area array on the active surface 212. The active surface 212 of the chip 210 has a redistribution layer (not shown), which can rearrange the bond pads 214 around the circumference of the active surface 212 with an area array. Further, the rigid cover 220 is adhered to the active surface 212 via the adhesive layer 230. The rigid cover 220 has a plurality of openings 222 corresponding to the bond pads 214 and exposing the bond pads 214.

FIG. 2C is a cross-sectional view of the second chip package of FIG. 2A connected to a printed circuit board. A plurality of contacts 216 is disposed on the bond pads 214 respectively. The heights of the contacts 216 relative to the active surface 212 is larger than the height of the rigid cover 220 relative to the active surface 212 so that the chip package 200 can be connected to the PCB 240 via the contacts 116. The PCB 240 has a plurality of contact pads 242. The bond pads 214 of the chip package 200 are electrically connected to the contact pads 242 of the PCB 240 via the contacts 216.

In the above first and second chip packages, the rigid covers completely cover the wafers. A plurality of contacts such as conductive bumps, is disposed on the bond pads respectively. Then the wafer is sawed to obtain independent chip packages. It should be noted that although the contacts can be formed before sawing the wafer, one may also choose to form the contacts on the contact pads of the PCB. Then the chip package can be connected to the PCB via these contacts.

The second embodiment uses a plurality of connecting lines to extend the bond pads to the backside of the chip and to form the terminal pads on the backside of the chip.

FIGS. 3A-3F show top views of the progression steps of the chip packaging process in accordance with the second embodiment of the present invention. FIGS. 4A-4F show the cross-sectional views of the chip packaging process of FIGS. 3A-3F along III-III′ line. Referring to FIGS. 3A and 4A, a wafer 302 is provided. The wafer 302 has an active surface 312 and a backside 316 corresponding to the active surface 312. The wafer 302 has a first chip area 310a and a second chip area 310b adjacent to the first chip area 310a. The wafer 302 has a plurality of first and second bond pads 314a and 314b on the active surface 312 in the first and second chip areas 310a and 310b respectively.

Referring to FIGS. 3B and 4B, a plurality of through holes 318 are formed on the wafer 302. The through holes 318 are through the wafer 302 by laser drilling or mechanical drilling and connect the active surface 312 and the backside 316. The through holes 318 are arranged between the first chip area 310a and the second chip area 310b.

Referring to FIGS. 3C and 4C, a plurality of first and second connecting lines 322a and 322b are formed on the wafer 302 by electroplating. Each of the first connecting lines 322a has a first end through one of the through holes 318 electrically connected to one of the first bond pads 314a. Each of the first connecting lines 322a has a second end extended to the backside 306 of the first chip area 310a to form one first terminal pad 324a on the backside 306 of the first chip area 310a. Each of the second connecting lines 322b has a first end through one of the through holes 318 electrically connected to one of the second bond pads 314b. Each of the second connecting lines 322b has a second end extended to the backside 306 of the second chip area 310b to form one second terminal pad 324b on the backside 306 of the second chip area 310b. It should be noted that because the first and second connecting lines 322a and 322b are formed on the wafer 302 by electroplating, portions of the first connecting lines 322a in the through holes 318 may be connected to portions of the second connecting lines 322b in the through holes 318 respectively.

Referring to FIGS. 3D and 4D, a first rigid cover 320a and a second rigid cover 320b are disposed on the active surface 312 of the first chip area 310a and the active surface 312 of the second chip area 310b via the adhesive layers 330 respectively. For thermal dissipation or electric characteristic consideration, the first and second rigid covers 320a and 320b can be a conducting material, an insulating material, and a transparent material. Further, the chip packaging process can be a wafer level packaging process. Hence, the first and second rigid covers 320a and 320b can be a single structure. That is, the first and second rigid covers 320a and 320b can be structurally connected via a connecting bar 320c or other connecting structures. Therefore, only a single action is required to dispose the first and second rigid covers 320a and 320b on the active surface 312.

Referring to FIGS. 3E and 4E, the wafer 302 is sawed along an area between the first and second chip areas 310a and 310b by mechanical or laser sawing. The portions of the first connecting lines 322a in the through holes 318 and the portions of the second connecting lines 322b in the through holes 318 are also sawed. Hence, the lateral side of the chip 310 has a plurality of concave surfaces 318a (i.e., a half of the through holes 318). The portions of the first connecting lines 322a in the through holes 318 and the portions of the second connecting lines 322b in the through holes 318 are disposed on the concave surfaces 318a to electrically connect the bond pads 314 and the terminal pads 324. Further, when the first and second rigid covers 320a and 320b is a single structure, the connecting bars 320c will be sawed to separate the first and second rigid covers 320a and 320b.

Referring to FIGS. 3F and 4F, the first chip area 310a and the second chip area 310b are separated from the wafer 302 by mechanical or laser sawing. Hence, the first chip area 310a and the first rigid cover 32a become a first chip package 300a, the second chip area 310b and the second rigid cover 320b become a second chip package 300b.

FIG. 5 is a cross-sectional view of the chip package of FIG. 3F connected to a printed circuit board. The chip package 300 includes a chip 310, a rigid cover 320, and an adhesive layer 330. The chip 300 has a rectangular shape and an active surface 312 and a plurality of bond pads 314. The bond pads 314 are disposed on the circumference of the active surface 312. A plurality of connecting lines 322 extend the bond pads 314 to the backside 316 of the chip 310 to form a plurality of the terminal pads 324. The terminal pads 324 can be connected to the contact pads 342 of the PCB 340 via a pre-solder, ACP or ACF (not shown).

FIG. 6 is the cross-sectional view of another chip package connected to a printed circuit board in accordance with the second embodiment of the present invention. Compared to FIG. 5, the chip 310 of the second chip package 300 has a plurality of terminal pads 324 disposed as an area array on backside 316 of the chip 310. These terminal pads 324 can be connected to the contact pads 342 of the PCB 340 via the contacts 350 such as conductive bumps.

The second embodiment uses a plurality of connecting lines to extend the bond pads to the backside of the chip and to form the terminal pads on the backside of the chip. Hence, when the chip is connected to the PCB, the active surface of the chip can be exposed. When the rigid cover is a transparent material, the chip package in the second embodiment can be applied in optical-electronic devices such as CMOS image sensor (CIS) and solar cell, or bio-chip.

In brief, the chip package and the process thereof dispose a rigid cover on the active surface of the chip to protect the active surface of the chip and enhance the structural strength of the chip package. Further, if the material of the rigid cover is a thermally conductive material such as Cu or Al alloy, the heat-spread ability of the chip package can be enhanced. If the rigid cover is made of an electrical conductive material and electrically connected to the ground of the chip package, the electromagnetic interference (EMI) to the chip package can be reduced. If the rigid cover is a transparent material, the chip package can be applied in optic-electric or bio devices. In addition, the chip packaging process can form a plurality of the terminal pads on the backside of the chip so that the chip package can be connected to the PCB or substrate via these terminal pads.

The above description provides a full and complete description of the preferred embodiments of the present invention. Various modifications, alternate construction, and equivalent may be made by those skilled in the art without changing the scope or spirit of the invention. Accordingly, the above description and illustrations should not be construed as limiting the scope of the invention which is defined by the following claims.

Claims

What is claimed is:

1. A chip package, comprising:

a chip having a plurality of bond pads formed thereon; and

a rigid cover located on the chip and having a plurality of openings formed therein, wherein the openings expose the bond pads on the chip respectively.

2. The chip package of claim 1 further comprising an adhesive layer disposed between the chip and the rigid cover, wherein the rigid cover is adhered to the chip via the adhesive layer.

3. The chip package of claim 1 further comprising a plurality of contacts electrically connected to the bond pads respectively.

4. The chip package of claim 3, wherein the contacts include conductive bumps.

5. The chip package of claim 3, wherein the contacts are connected to the PCB.

6. The chip package of claim 3, wherein the heights of the contacts relative to a top surface of the chip are larger than the height of the rigid cover to the top surface.

7. The chip package of claim 1, wherein the chip includes a redistribution layer on the chip to form the bond pads.

8. The chip package of claim 1, wherein the material of the rigid cover includes a conducting material, an insulating material, or a transparent material.

9. The chip package of claim 1, wherein the bond pads are disposed on the chip as an array.

10. The chip package of claim 1, wherein the bond pads are disposed in an interior region of the chip.

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