SiCRYSTAL AG

City:

NUERNBERG

Country:

Germany

Published Applications:

Last publication date:

2016-03-10

Patent Grants:

Last grant date:

2017-08-15

Top Inventors for applications by SiCRYSTAL AG

These are the the leading inventors for applications assigned to SiCRYSTAL AG:

ANDREAS WOHLFART 2 ERLANGEN, Germany
MICHAEL VOGEL 2 NURNBERG, Germany
THOMAS STRAUBINGER 2 Mohrendorf, Germany
MICHAEL VOGEL 1 NUERNBERG, Germany

MATTHIAS STOCKMEIER 1 ERLANGEN, Germany
RALF MUELLER 1 FUERTH, Germany
Michael Vogel 1 Nuremberg, Germany

Recent patent applications by SiCRYSTAL AG

SiCRYSTAL AG based in NUERNBERG, DE has been assigned the rights to these inventions. The list includes both Pending Applications and Patent Grants:

#1 | 2016-03-10 ✅ Patent 9,732,438 granted on 2017-08-15

US20160068994A1

Chemistry; metallurgy

Method for producing a vanadium-doped silicon carbide volume monocrystal, and vanadium-doped silicon carbide substrate

#2 | 2013-07-04 ✅ Patent 8,758,510 granted on 2014-06-24

US20130171403A1

Electricity

Production method for an SiC volume monocrystal with a non-homogeneous lattice plane course and a monocrystalline SiC substrate with a non-homogeneous lattice plane course

#3 | 2013-07-04 ✅ Patent 8,747,982 granted on 2014-06-10

US20130171402A1

Chemistry; metallurgy

Production method for an SiC volume monocrystal with a homogeneous lattice plane course and a monocrystalline SiC substrate with a homogeneous lattice plane course

AssigneeID:

28976 ⎘