ANDREAS WOHLFART

City:

ERLANGEN

Country:

Germany

Published Applications:

Last publication date:

2014-08-14

Top Assignees for applications by ANDREAS WOHLFART

The entities that hold a legal rights for patent applications filed by inventor WOHLFART ANDREAS:

SiCrystal AG 3 ERLANGEN, Germany
SiCrystal Aktiengesellschaft 3 Nuremberg, Germany
SiCRYSTAL AG 2 NUERNBERG, Germany
SICRYSTAL AKTIENGESELLSCHAFT 1 NUERNBERG, Germany
SiCrystal AG 1 Nuremberg, Germany

Recent patent applications by WOHLFART ANDREAS

ANDREAS WOHLFART from ERLANGEN, DE has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2014-08-14

US20140225127A1

Electricity

Monocrystalline SiC substrate with a non-homogeneous lattice plane course

#2 | 2013-07-04

US20130171403A1

Electricity

Production method for an SiC volume monocrystal with a non-homogeneous lattice plane course and a monocrystalline SiC substrate with a non-homogeneous lattice plane course

#3 | 2013-07-04

US20130171402A1

Chemistry; metallurgy

Production method for an SiC volume monocrystal with a homogeneous lattice plane course and a monocrystalline SiC substrate with a homogeneous lattice plane course

#4 | 2011-12-08

US20110300323A1

Chemistry; metallurgy

Production method for a bulk SiC single crystal with a large facet and monocrystalline SiC substrate with homogeneous resistance distribution

#5 | 2011-04-14

US20110086213A1

Chemistry; metallurgy

METHOD OF PRODUCING A SILICON CARBIDE BULK SINGLE CRYSTAL WITH THERMAL TREATMENT, AND LOW-IMPEDANCE MONOCRYSTALLINE SILICON CARBIDE SUBSTRATE

#6 | 2010-06-24

US20100159182A1

Chemistry; metallurgy

Production Method for a Codoped Bulk SiC Crystal and High-Impedance SiC Substrate

InventorID:

323855 ⎘