NURNBERG
Germany
31
2026-06-04
The entities that hold a legal rights for patent applications filed by inventor VOGEL MICHAEL:
MICHAEL VOGEL from NURNBERG, DE has applied for patents for these inventions. The list has both pending applications and granted patents:
Seed Crystal Assembly and Method of Growing SiC Single Crystal Boules
#2 | 2025-10-09Layered Substrate, Method of Fabrication of a Layered Substrate and Method for Growing an Epitaxial Layer with the Layered Substrate
#3 | 2025-10-09Multilayer Seed for Single-Crystal Growth, Method of Producing a Multilayer Seed, Use of the Multilayer Seed in a PVT Process for Growing a Single-Crystal and PVT Process Using the Same
#4 | 2025-10-09Layered Seed, Method of Fabrication of a Layered Seed and Method for Growing a Volume Mono Crystal with the Layered Seed
#5 | 2025-09-11SEED UNIT AND APPARATUS FOR GROWING A BULK SIC SINGLE CRYSTAL
#6 | 2025-09-11PRODUCTION METHOD FOR A BULK SIC SINGLE CRYSTAL
#7 | 2025-06-19ARRANGEMENT FOR GROWING A SIC VOLUME MONOCRYSTAL AND GROWING METHOD
#8 | 2025-06-19CRUCIBLE FOR PRODUCING A SIC VOLUME MONO CRYSTAL AND A METHOD FOR GROWING A SIC VOLUME MONO CRYSTAL
#9 | 2024-09-26METHOD AND APPARATUS FOR THE THERMAL POST-TREATMENT OF AT LEAST ONE SIC VOLUME MONOCRYSTAL
#10 | 2024-09-19Sublimation System And Method Of Growing At Least One Single Crystal
#11 | 2024-09-19Sublimation System and Method of Growing at Least One Single Crystal of a Semiconductor Material
#12 | 2024-08-08SYSTEM FOR MANUFACTURING A HIGH-QUALITY SEMICONDUCTOR SINGLE CRYSTAL, AND METHOD OF MANUFACTURING SAME
#13 | 2024-08-08SYSTEM FOR MANUFACTURING A HIGH-QUALITY SEMICONDUCTOR SINGLE CRYSTAL, AND METHOD OF MANUFACTURING SAME
#14 | 2024-01-04PRODUCTION METHOD FOR AN SIC VOLUME MONOCRYSTAL OF INHOMOGENEOUS SCREW DISLOCATION DISTRIBUTION AND SIC SUBSTRATE
#15 | 2023-12-28PRODUCTION METHOD FOR AN SIC VOLUME MONOCRYSTAL OF HOMOGENEOUS SCREW DISLOCATION DISTRIBUTION AND SIC SUBSTRATE
#16 | 2023-06-22SILICON CARBIDE SUBSTRATE AND METHOD OF GROWING SiC SINGLE CRYSTAL BOULES
#17 | 2023-04-20Method for simultaneously manufacturing more than one single crystal of a semiconductor material by physical vapor transport
#18 | 2023-03-16CHAMFERED SILICON CARBIDE SUBSTRATE AND METHOD OF CHAMFERING
#19 | 2022-03-24Silicon carbide substrate and method of growing SiC single crystal boules
#20 | 2022-01-27SiC crystals with an optimal orientation of lattice planes for fissure reduction and method of producing same
#21 | 2022-01-27SIC CRYSTALLINE SUBSTRATES WITH AN OPTIMAL ORIENTATION OF LATTICE PLANES FOR FISSURE REDUCTION AND METHOD OF PRODUCING SAME
#22 | 2021-05-20Silicon carbide substrate and method of growing SiC single crystal boules
#23 | 2021-01-07System for horizontal growth of high-quality semiconductor single crystals by physical vapor transport
#24 | 2021-01-07System for efficient manufacturing of a plurality of high-quality semiconductor single crystals by physical vapor transport
#25 | 2020-03-05Silicon carbide substrate and method of growing SiC single crystal boules
#26 | 2019-11-14Chamfered silicon carbide substrate and method of chamfering
#27 | 2019-11-14Chamfered silicon carbide substrate and method of chamfering
#28 | 2013-11-21Physical vapor transport growth system for simultaneously growing more than one SiC single crystal and method of growing
#29 | 2013-07-04Production method for an SiC volume monocrystal with a non-homogeneous lattice plane course and a monocrystalline SiC substrate with a non-homogeneous lattice plane course
#30 | 2013-07-04Production method for an SiC volume monocrystal with a homogeneous lattice plane course and a monocrystalline SiC substrate with a homogeneous lattice plane course
#31 | 2011-04-14METHOD OF PRODUCING A SILICON CARBIDE BULK SINGLE CRYSTAL WITH THERMAL TREATMENT, AND LOW-IMPEDANCE MONOCRYSTALLINE SILICON CARBIDE SUBSTRATE
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