Michael Vogel

Monocrystalline SIC Substrates Having an Asymmetrical Geometry and Method of Producing Same

SILICON CARBIDE SUBSTRATE AND METHOD OF GROWING SiC SINGLE CRYSTAL BOULES

Method for simultaneously manufacturing more than one single crystal of a semiconductor material by physical vapor transport

CHAMFERED SILICON CARBIDE SUBSTRATE AND METHOD OF CHAMFERING

Silicon carbide substrate and method of growing SiC single crystal boules

SiC crystals with an optimal orientation of lattice planes for fissure reduction and method of producing same

Silicon carbide substrate and method of growing SiC single crystal boules

System for horizontal growth of high-quality semiconductor single crystals by physical vapor transport

System for efficient manufacturing of a plurality of high-quality semiconductor single crystals by physical vapor transport

Production method and growth arrangement for producing a bulk SiC single crystal by arranging at least two insulation cylinder components to control a variation in a volume element density

Silicon carbide substrate and method of growing SiC single crystal boules

Chamfered silicon carbide substrate and method of chamfering

Chamfered silicon carbide substrate and method of chamfering

Method for producing a vanadium-doped silicon carbide volume monocrystal, and vanadium-doped silicon carbide substrate

Monocrystalline SiC substrate with a non-homogeneous lattice plane course

Physical vapor transport growth system for simultaneously growing more than one SiC single crystal and method of growing

Production method for a bulk SiC single crystal with a large facet and monocrystalline SiC substrate with homogeneous resistance distribution