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Assignee profile:

SiCrystal GmbH

City:

Nuremberg

Country:

Germany

Published Applications:

Last publication date:

2023-10-05

Patent Grants:

Last grant date:

2026-05-12

Top Inventors for applications by SiCrystal GmbH

These are the the leading inventors for applications assigned to SiCrystal GmbH:

Michael Vogel 13 Nuremberg, Germany
MICHAEL VOGEL 11 NURNBERG, Germany
Arnd-Dietrich WEBER 9 Forchheim, Germany
Matthias STOCKMEIER 8 Egloffstein, Germany

Bernhard Ecker 8 Nuremberg, Germany
Bernhard ECKER 7 Nürnberg, Germany
Ralf Müller 7 Zirndorf, Germany
Ralf MÜLLER 4 Zirndorf, Germany

Erwin Schmitt 4 Grossenseebach, Germany
MICHAEL VOGEL 2 NUERNBERG, Germany
RALF MUELLER 1 ZIRNDORF, Germany
BERNHARD ECKER 1 NUERNBERG, Germany

Kuniyoshi OKAMOTO 1 Kyoto, Japan
Dominik Bannspach 1 Erlangen, Germany
Arnd-Dietrich WEBER 1 Forchheim, Denmark
RALPH-UWE BARZ 1 ERLANGEN, Germany

Recent patent applications by SiCrystal GmbH

SiCrystal GmbH based in Nuremberg, DE has been assigned the rights to these inventions. The list includes both Pending Applications and Patent Grants:

#1 | 2023-10-05 ✅ Patent 12,628,388 granted on 2026-05-12

US20230317780A1

Electricity

Monocrystalline SIC Substrates Having an Asymmetrical Geometry and Method of Producing Same

#2 | 2023-06-22 ✅ Patent 12,460,314 granted on 2025-11-04

US20230193508A1

Chemistry; metallurgy

SILICON CARBIDE SUBSTRATE AND METHOD OF GROWING SiC SINGLE CRYSTAL BOULES

#3 | 2023-04-20 ✅ Patent 12,157,955 granted on 2024-12-03

US20230120928A1

Chemistry; metallurgy

Method for simultaneously manufacturing more than one single crystal of a semiconductor material by physical vapor transport

#4 | 2023-03-16 ✅ Patent 12,610,792 granted on 2026-04-21

US20230078982A1

Electricity

CHAMFERED SILICON CARBIDE SUBSTRATE AND METHOD OF CHAMFERING

#5 | 2022-03-24 ✅ Patent 11,781,245 granted on 2023-10-10

US20220090296A1

Chemistry; metallurgy

Silicon carbide substrate and method of growing SiC single crystal boules

#6 | 2022-01-27 ✅ Patent 12,195,878 granted on 2025-01-14

US20220025546A1

Chemistry; metallurgy

SiC crystals with an optimal orientation of lattice planes for fissure reduction and method of producing same

#7 | 2021-05-20 ✅ Patent 11,236,438 granted on 2022-02-01

US20210148006A1

Chemistry; metallurgy

Silicon carbide substrate and method of growing SiC single crystal boules

#8 | 2021-01-07 ✅ Patent 11,479,875 granted on 2022-10-25

US20210002787A1

Chemistry; metallurgy

System for horizontal growth of high-quality semiconductor single crystals by physical vapor transport

#9 | 2021-01-07 ✅ Patent 11,560,643 granted on 2023-01-24

US20210002785A1

Chemistry; metallurgy

System for efficient manufacturing of a plurality of high-quality semiconductor single crystals by physical vapor transport

#10 | 2020-08-20 ✅ Patent 11,261,536 granted on 2022-03-01

US20200263318A1

Chemistry; metallurgy

Production method and growth arrangement for producing a bulk SiC single crystal by arranging at least two insulation cylinder components to control a variation in a volume element density

#11 | 2020-03-05 ✅ Patent 11,624,124 granted on 2023-04-11

US20200071847A1

Chemistry; metallurgy

Silicon carbide substrate and method of growing SiC single crystal boules

#12 | 2019-11-14 ✅ Patent 11,515,140 granted on 2022-11-29

US20190348272A1

Electricity

Chamfered silicon carbide substrate and method of chamfering

#13 | 2019-11-14 ✅ Patent 11,041,254 granted on 2021-06-22

US20190345635A1

Chemistry; metallurgy

Chamfered silicon carbide substrate and method of chamfering

Also check out SICRYSTAL GMBH's (Nuremberg, Germany) applicant profile with 12 patent applications submitted.

AssigneeID:

355991 ⎘