Campbell, California
United States
58
2019-04-18
The entities that hold a legal rights for patent applications filed by inventor Ng Daniel:
Daniel Ng from Campbell, US has applied for patents for these inventions. The list has both pending applications and granted patents:
Nano-tube MOSFET technology and devices
#2 | 2018-09-20Semiconductor power devices manufactured with self-aligned processes and more reliable electrical contacts
#3 | 2018-08-23Nano-tube MOSFET technology and devices
#4 | 2017-12-28Nano MOSFET with trench bottom oxide shielded and third dimensional P-body contact
#5 | 2017-02-23TERMINATION STRUCTURE WITH MULTIPLE EMBEDDED POTENTIAL SPREADING CAPACITIVE STRUCTURES FOR TRENCH MOSFET
#6 | 2017-02-16Integrating enhancement mode depleted accumulation/inversion channel devices with MOSFETs
#7 | 2016-11-03NANO-TUBE MOSFET TECHNOLOGY AND DEVICES
#8 | 2016-10-27Flexible Crss adjustment in a SGT MOSFET to smooth waveforms and to avoid EMI in DC-DC application
#9 | 2016-09-08Semiconductor power devices manufactured with self-aligned processes and more reliable electrical contacts
#10 | 2016-08-25Power MOSFET device structure for high frequency applications
#11 | 2016-06-30Nano MOSFET with trench bottom oxide shielded and third dimensional P-body contact
#12 | 2016-06-16Integrating enhancement mode depleted accumulation/inversion channel devices with MOSFETs
#13 | 2016-05-19High frequency switching MOSFETs with low output capacitance using a depletable P-shield
#14 | 2016-01-28Configuration of gate to drain (GD) clamp and ESD protection circuit for power device breakdown protection
#15 | 2016-01-07Integrating Schottky diode into power MOSFET
#16 | 2015-12-03Semiconductor power devices manufactured with self-aligned processes and more reliable electrical contacts
#17 | 2015-07-30Termination structure with multiple embedded potential spreading capacitive structures for trench MOSFET
#18 | 2015-05-21High frequency switching MOSFETs with low output capacitance using a depletable P-shield
#19 | 2014-10-30Nano MOSFET with trench bottom oxide shielded and third dimensional P-body contact
#20 | 2014-09-18Shielded gate trench MOSFET package
#21 | 2014-08-28High frequency switching MOSFETs with low output capacitance using a depletable P-shield
#22 | 2014-08-21Method of making MOSFET integrated with schottky diode with simplified one-time top-contact trench etching
#23 | 2014-08-14Method of making a low-Rdson vertical power MOSFET device
#24 | 2014-06-26Method of making MOSFET integrated with schottky diode with simplified one-time top-contact trench etching
#25 | 2014-06-26High frequency switching MOSFETs with low output capacitance using a depletable P-shield
#26 | 2014-06-19Termination structure with multiple embedded potential spreading capacitive for trench MOSFET and method
#27 | 2013-12-19Integrated snubber in a single poly MOSFET
#28 | 2013-12-12MOSFET with improved performance through induced net charge region in thick bottom insulator
#29 | 2013-11-21Integrating schottky diode into power MOSFET
#30 | 2013-08-29Nano-tube MOSFET technology and devices
#31 | 2013-08-08Nano MOSFET with trench bottom oxide shielded and third dimensional P-body contact
#32 | 2013-05-02Two-dimensional shielded gate transistor device and method of manufacture
#33 | 2013-04-18Power MOSFET device structure for high frequency applications
#34 | 2013-02-28Method of making a low-Rdson vertical power MOSFET device
#35 | 2013-02-21Shielded gate trench MOSFET package
#36 | 2013-01-17Junction barrier Schottky diode with enforced upper contact structure and method for robust packaging
#37 | 2013-01-03Flexible Crss adjustment in a SGT MOSFET to smooth waveforms and to avoid EMI in DC-DC application
#38 | 2012-11-08Integrating Schottky diode into power MOSFET
#39 | 2012-10-04Approach to integrate Schottky in MOSFET
#40 | 2012-05-24ACCUFET WITH INTEGRATED CLAMPING CIRCUIT
#41 | 2011-12-01Semiconductor power devices manufactured with self-aligned processes and more reliable electrical contacts
#42 | 2011-09-22Integration of a sense FET into a discrete power MOSFET
#43 | 2011-08-18Termination structure with multiple embedded potential spreading capacitive structures for trench MOSFET and method
#44 | 2011-07-28Nano-tube MOSFET technology and devices
#45 | 2011-06-23Configuration of gate to drain (GD) clamp and ESD protection circuit for power device breakdown protection
#46 | 2011-03-31Reduced mask configuration for power mosfets with electrostatic discharge (ESD) circuit protection
#47 | 2010-12-16Integration of a sense FET into a discrete power MOSFET
#48 | 2010-08-12Configuration of gate to drain (GD) clamp and ESD protection circuit for power device breakdown protection
#49 | 2010-07-01Nano-tube MOSFET technology and devices
#50 | 2010-06-17Power MOSFET device structure for high frequency applications
#51 | 2009-10-08Integration of a sense FET into a discrete power MOSFET
#52 | 2009-09-03Calibration technique for measuring gate resistance of power MOS gate device at wafer level
#53 | 2009-07-02Reduced mask configuration for power MOSFETs with electrostatic discharge (ESD) circuit protection
#54 | 2008-11-27Layouts for multiple-stage ESD protection circuits for integrating with semiconductor power device
#55 | 2007-05-03Calibration technique for measuring gate resistance of power MOS gate device at water level
#56 | 2007-04-05Cobalt silicon contact barrier metal process for high density semiconductor power devices
#57 | 2006-11-09Power MOSFET device structure for high frequency applications
#58 | 2006-09-14Enhancing Schottky breakdown voltage (BV) without affecting an integrated MOSFET-Schottky device layout
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