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Assignee profile:

AIXTRON INC.

City:

Sunnyvale, California

Country:

United States

Published Applications:

19

Last publication date:

2014-10-23

Patent Grants:

16

Last grant date:

2016-06-07

Top Inventors for applications by AIXTRON INC.

These are the the leading inventors for applications assigned to AIXTRON INC.:

Recent patent applications by AIXTRON INC.

AIXTRON INC. based in Sunnyvale, US has been assigned the rights to these inventions. The list includes both Pending Applications and Patent Grants:

#1 | 2014-10-23 ✅ Patent 9,359,674 granted on 2016-06-07
US20140314965A1
Chemistry; metallurgy

Apparatus and method for dielectric deposition

 #2 | 2014-08-07 ✅ Patent 9,096,933 granted on 2015-08-04
US20140220262A1
Chemistry; metallurgy

Methods for plasma processing

 #3 | 2014-07-31 ✅ Patent 9,096,932 granted on 2015-08-04
US20140212601A1
Electricity

Methods for plasma processing

 #4 | 2014-01-30 ✅ Patent 8,906,456 granted on 2014-12-09
US20140030434A1
Chemistry; metallurgy

Apparatus and method for high-throughput chemical vapor deposition

 #5 | 2013-12-19 ✅ Patent 9,299,956 granted on 2016-03-29
US20130334511A1
Electricity

Method for deposition of high-performance coatings and encapsulated electronic devices

 #6 | 2010-07-29 ✅ Patent 8,986,453 granted on 2015-03-24
US20100186666A1
Chemistry; metallurgy

Device for coating substrates disposed on a susceptor

 #7 | 2010-07-08 ✅ Patent 8,308,867 granted on 2012-11-13
US20100170435A1
Chemistry; metallurgy

Device for the temperature control of the surface temperatures of substrates in a CVD reactor

 #8 | 2009-12-31 ✅ Patent 7,981,472 granted on 2011-07-19
US20090324829A1
Chemistry; metallurgy

Methods of providing uniform gas delivery to a reactor

 #9 | 2009-11-19
US20090283040A1
Chemistry; metallurgy

DEVICE FOR TEMPERATURE-CONTROLLED ACCOMMODATION OF A CONTAINER

 #10 | 2009-04-30
US20090110805A1
Chemistry; metallurgy

Apparatus and Method for Controlling the Surface Temperature of a Substrate in a Process Chamber

 #11 | 2009-03-26 ✅ Patent 7,732,308 granted on 2010-06-08
US20090081853A1
Chemistry; metallurgy

Process for depositing layers containing silicon and germanium

 #12 | 2009-03-12 ✅ Patent 8,157,915 granted on 2012-04-17
US20090064935A1
Chemistry; metallurgy

CVD reactor having a process-chamber ceiling which can be lowered

 #13 | 2009-01-29 ✅ Patent 8,298,337 granted on 2012-10-30
US20090025639A1
Chemistry; metallurgy

Gas inlet element for a CVD reactor

 #14 | 2009-01-01 ✅ Patent 8,304,013 granted on 2012-11-06
US20090004830A1
Electricity

Methods for depositing especially doped layers by means of OVPD or the like

 #15 | 2008-12-18 ✅ Patent 8,152,924 granted on 2012-04-10
US20080308040A1
Chemistry; metallurgy

CVD reactor comprising a gas inlet member

 #16 | 2008-08-28
US20080206464A1
Chemistry; metallurgy

Method and Device for the Depositing of Gallium Nitrite Layers on a Sapphire Substrate and Associated Substrate Holder

 #17 | 2008-06-05 ✅ Patent 7,981,473 granted on 2011-07-19
US20080131601A1
Chemistry; metallurgy

Transient enhanced atomic layer deposition

 #18 | 2008-04-24 ✅ Patent 8,062,426 granted on 2011-11-22
US20080092817A1
Chemistry; metallurgy

CVD reactor with RF-heated process chamber

 #19 | 2007-12-20 ✅ Patent 8,114,480 granted on 2012-02-14
US20070293055A1
Chemistry; metallurgy

Method for self-limiting deposition of one or more monolayers

Also check out Aixtron Inc.'s (Sunnyvale, United States) applicant profile with 4 patent applications submitted.

AssigneeID:

53356 ⎘