Patents-Review.com
ClassID:

121259 ⎘

C30B19/067 - CPC Classification

Classification description:

Liquid-phase epitaxial-layer growth; Reaction chambers; Boats for supporting the melt; Substrate holders Boots or containers

Recent Application in this class:
#1
20260092394
2026-04-02

METHOD FOR MANUFACTURING GROUP III NITRIDE SEMICONDUCTOR

 #2
20160340794
2016-11-24

Method for producing SiC single crystal

 #3
20160305041
2016-10-20

Preparation method and application of sodium barium fluoroborate birefringent crystal

 #4
20160273126
2016-09-22

METHOD FOR PRODUCING SiC SINGLE CRYSTAL

 #5
20160208411
2016-07-21

N-type SiC single crystal and method for its production

 #6
20160090664
2016-03-31

METHOD FOR PRODUCING SIC SINGLE CRYSTAL

 #7
20160068993
2016-03-10

SiC single crystal and method for producing same

 #8
20150299900
2015-10-22

Method for producing a SiC single crystal in the presence of a magnetic field which is applied to a solution

 #9
20150299896
2015-10-22

Method for producing an n-type SiC single crystal from a Si—C solution comprising a nitride

 #10
20150259820
2015-09-17

Method for manufacturing isolating layer onto crucible and spraying device related thereto

 #11
20150225872
2015-08-13

SINGLE CRYSTAL PRODUCTION APPARATUS, CRUCIBLE FOR USE THEREIN, AND METHOD OF PRODUCING SINGLE CRYSTAL

 #12
20150191848
2015-07-09

Apparatus for producing SiC single crystal by solution growth method, and method for producing SiC single crystal by using the production apparatus and crucible used in the production apparatus

 #13
20140048012
2014-02-20

Methods and apparatuses for manufacturing cast silicon from seed crystals

 #14
20110129403
2011-06-02

Methods and apparatuses for manufacturing cast silicon from seed crystals

 #15
20100203350
2010-08-12

Methods and Apparatuses for Manufacturing Cast Silicon from Seed Crystals

 #16
20100197070
2010-08-05

Methods and Apparatuses for Manufacturing Cast Silicon From Seed Crystals