Patents-Review.com
ClassID:

121252 ⎘

C30B19/06 - CPC Classification

Classification description:

Liquid-phase epitaxial-layer growth Reaction chambers; Boats for supporting the melt; Substrate holders

Sub-classes:
Recent Application in this class:
#1
20200388491
2020-12-10

Method of forming oxide film, method of manufacturing semiconductor device, and apparatus configured to form oxide film

 #2
20200385884
2020-12-10

Method of forming oxide film, method of manufacturing semiconductor device, and film forming apparatus configured to form oxide film

 #3
20180257993
2018-09-13

SiC crucible, SiC sintered body, and method of producing SiC single crystal

 #4
20180230623
2018-08-16

METHOD OF PRODUCING SiC SINGLE CRYSTAL

 #5
20180195203
2018-07-12

Devices and methods for electrochemical liquid phase epitaxy

 #6
20180163323
2018-06-14

METHOD FOR PRODUCING GROUP 13 NITRIDE SINGLE CRYSTAL AND APPARATUS FOR PRODUCING GROUP 13 NITRIDE SINGLE CRYSTAL

 #7
20160194786
2016-07-07

Self-aligned tunable metamaterials

 #8
20150292108
2015-10-15

Method for growing a bulk single crystal nitride material

 #9
20150017466
2015-01-15

SELF-ALIGNED TUNABLE METAMATERIALS

 #10
20140083352
2014-03-27

Low temperature continuous circulation reactor for the aqueous synthesis of ZnO films, nanostructures, and bulk single crystals

 #11
20140070370
2014-03-13

Group III nitride semiconductor single crystal, method for producing the same, self-standing substrate, and semiconductor device

 #12
20130305981
2013-11-21

Manufacturing apparatus of SiC single crystal, jig for use in the manufacturing apparatus, and method for manufacturing SiC single crystal

 #13
20130074762
2013-03-28

Manufacturing method and manufacturing apparatus of a group III nitride crystal, utilizing a melt containing a group III metal, an alkali metal, and nitrogen

 #14
20120238084
2012-09-20

Method of forming epitaxial based integrated circuit

 #15
20120238083
2012-09-20

Method of forming epitaxial semiconductor structure

 #16
20120238080
2012-09-20

Method of forming epitaxial film

 #17
20120238079
2012-09-20

Method of transferring epitaxial film

 #18
20120238078
2012-09-20

Method of integrating epitaxial film onto assembly substrate

 #19
20110259261
2011-10-27

REACTION VESSEL FOR GROWING SINGLE CRYSTAL AND METHOD FOR GROWING SINGLE CRYSTAL

 #20
20110247550
2011-10-13

Apparatus for making epitaxial film

 #21
20100260656
2010-10-14

Group III nitride crystal, method for growing the group III nitride crystal, and apparatus for growing the same

 #22
20100105194
2010-04-29

Method of integrating epitaxial film onto assembly substrate

 #23
20100102419
2010-04-29

Epitaxy-Level Packaging (ELP) System

 #24
20100101725
2010-04-29

Apparatus for making epitaxial film

 #25
20090000542
2009-01-01

Apparatus for producing nitride single crystal

 #26
20080282971
2008-11-20

Nitride single crystal manufacturing apparatus

 #27
20080264331
2008-10-30

Manufacturing method and manufacturing apparatus of a group III nitride crystal

 #28
20070089668
2007-04-26

Epitaxial growth of structures with nano-dimensional features from liquid phase by pulse cooling of substrate

 #29
20050011432
2005-01-20

Method of manufacturing Group III nitride crystals, method of manufacturing semiconductor substrate, Group III nitride crystals, semiconductor substrate, and electronic device