121278 ⎘
Single-crystal growth by condensing evaporated or sublimed materials; Epitaxial-layer growth; Heating of the deposition chamber, the substrate or the materials to be evaporated Heating of the substrate
LARGE DIAMETER SILICON CARBIDE WAFERS
#2LARGE DIAMETER SILICON CARBIDE WAFERS
#3Layered Seed, Method of Fabrication of a Layered Seed and Method for Growing a Volume Mono Crystal with the Layered Seed
#4METHODS AND SYSTEMS FOR HEATING A WIDE BANDGAP SUBSTRATE
#5CRYSTAL GROWTH METHODS AND DEVICES
#6SiC SINGLE CRYSTAL BOULE, MANUFACTURING METHOD OF SiC SINGLE CRYSTAL BOULE, AND MANUFACTURING METHOD OF SiC SUBSTRATE
#7IN-SITU FILM GROWTH RATE MONITORING APPARATUS, SYSTEMS, AND METHODS FOR SUBSTRATE PROCESSING
#8LARGE DIAMETER SILICON CARBIDE WAFERS
#9Laser processing system integrated with MBE device
#10Silicon carbide substrate
#11Hierarchical Inverted/Normal Cobalt Ferrite Nano-Chessboard
#12MOLECULAR BEAM EPITAXY THIN FILM GROWTH APPARATUS
#13Method of using sic container
#14HIGHLY ORIENTED, SINGLE-CRYSTALLINE LOW-DIMENSIONAL NANOSTRUCTURES, METHOD OF FABRICATION AND DEVICES
#15PRODUCTION METHOD FOR AN SIC VOLUME MONOCRYSTAL OF INHOMOGENEOUS SCREW DISLOCATION DISTRIBUTION AND SIC SUBSTRATE
#16Transparent conductive oxide thin film and use thereof
#17METHODS OF DEPOSITING FILMS WITH THE SAME STOICHIOMETRIC FEATURES AS THE SOURCE MATERIAL
#18METHOD FOR MANUFACTURING ALUMINUM NITRIDE SUBSTRATE, ALUMINUM NITRIDE SUBSTRATE, AND METHOD FOR FORMING ALUMINUM NITRIDE LAYER
#19SYSTEM FOR DEPOSITING PIEZOELECTRIC MATERIALS, METHODS FOR USING THE SAME, AND MATERIALS DEPOSITED WITH THE SAME
#20METHOD FOR PRODUCING SEMICONDUCTOR SUBSTRATE, SEMICONDUCTOR SUBSTRATE, AND METHOD FOR PREVENTING CRACK OCCURRENCE IN GROWTH LAYER
#21Methods and systems for heating a wide bandgap substrate
#22METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE, SEMICONDUCTOR SUBSTRATE, AND METHOD FOR FORMING GROWN LAYER
#23SILICON CARBIDE SINGLE CRYSTAL AND METHOD OF MANUFACTURING SILICON CARBIDE SINGLE CRYSTAL
#24Method for heating a wide bandgap substrate by providing a resistive heating element which emits radiative heat in a mid-infrared band
#25Method for simultaneously manufacturing more than one single crystal of a semiconductor material by physical vapor transport
#26SiC single crystal manufacturing method, SiC single crystal manufacturing device, and SiC single crystal wafer
#27Manufacturing method for a group-III nitride crystal that requires a flow amount of a carrier gas supplied into a raw material chamber at a temperature increase step satisfies two relational equations (I) and (II)
#28In-situ film growth rate monitoring apparatus, systems, and methods for substrate processing
#29Method for producing a SiC seed crystal for growth of a SiC ingot by heat-treating in a main container made of a SiC material
#30WAFER TEMPERATURE GRADIENT CONTROL TO SUPPRESS SLIP FORMATION IN HIGH-TEMPERATURE EPITAXIAL FILM GROWTH
#31MANUFACTURING DEVICE FOR SIC SEMICONDUCTOR SUBSTRATE
#32CONTAINER MADE OF SIC
#33Method of manufacturing semiconductor substrate and epitaxial growth method
#34VAPOR PHASE GROWTH APPARATUS
#35SYNTHESIS OF SINGLE CRYSTAL FILMS ON AMORPHOUS SUBSTRATES
#36Large diameter silicon carbide wafers
#37Molecular-beam epitaxy system comprising an infrared radiation emitting heater and a thermally conductive backing plate including an infrared-absorbing coating thereon
#38SINGLE-CRYSTALLINE METAL FILMS
#39SUSCEPTOR, METHOD FOR PRODUCING EPITAXIAL SUBSTRATE, AND EPITAXIAL SUBSTRATE
#40System for efficient manufacturing of a plurality of high-quality semiconductor single crystals by physical vapor transport
#41Stabilized, high-doped silicon carbide
#42Thin film coating and method of fabrication thereof
#43Method for producing SiC substrate provided with graphene precursor and method for surface treating SiC substrate
#44Vapour-phase epitaxial growth method, and method for producing substrate equipped with epitaxial layer
#45Terahertz antenna and method for producing a terahertz antenna
#46Stabilized, high-doped silicon carbide
#47Method for formation of a transition metal dichalcogenide (TMDC) material layer
#48Growth of high quality single crystalline thin films with the use of a temporal seed layer
#49Electron beam heating and atomic surface restructuring of sapphire surface
#50Thermal absorption coating on sapphire for epitaxial process
#51Ceramic heater with enhanced RF power delivery
#52METHOD OF MANUFACTURING SILICON CARBIDE INGOT, SILICON CARBIDE SEED SUBSTRATE, SILICON CARBIDE SUBSTRATE, SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
#53Single crystal rhombohedral epitaxy of SiGe on sapphire at 450° C.-500° C. substrate temperatures
#54Rhombohedron epitaxial growth with molten target sputtering
#55Film formation method, vacuum processing apparatus, method of manufacturing semiconductor light emitting element, semiconductor light emitting element, method of manufacturing semiconductor electronic element, semiconductor electronic element, and illuminating apparatus
#56METHOD AND APPARATUS FOR THE SELECTIVE DEPOSITION OF EPITAXIAL GERMANIUM STRESSOR ALLOYS
#57Heating system comprising semiconductor light sources
#58SILICON CARBIDE SUBSTRATE, SILICON CARBIDE INGOT, AND METHOD OF MANUFACTURING THE SAME
#59GROUP IV NANOWIRES GROWN FROM INDUCTIVELY OR RESISTIVELY HEATED SUBSTRATES
#60Silicon carbide single crystal wafer and method of manufacturing a silicon carbide single crystal ingot
#61Device of manufacturing silicon carbide single crystal
#62Axial Gradient Transport (AGT) Growth Process and Apparatus Utilizing Resistive Heating
#63METHOD FOR MANUFACTURING SILICON CARBIDE SINGLE CRYSTAL
#64Fabrication of semiconductor device using alternating high and low temperature layers
#65Defect reduction in seeded aluminum nitride crystal growth
#66Method for depositing a group III nitride semiconductor film
#67Scintillator, method of fabricating the same and X-ray detector including the scintillator
#68Dielectric film forming apparatus and method for forming dielectric film
#69SILICON CARBIDE SUBSTRATE, SILICON CARBIDE INGOT, AND METHOD OF MANUFACTURING THE SAME
#70Method for manufacturing silicon carbide single crystal, and silicon carbide substrate
#71Method and apparatus for the selective deposition of epitaxial germanium stressor alloys
#72PRODUCTION METHOD OF SILICON CARBIDE CRYSTAL, SILICON CARBIDE CRYSTAL, AND PRODUCTION DEVICE OF SILICON CARBIDE CRYSTAL
#73COMPOSITE SUBSTRATES FOR DIRECT HEATING AND INCREASED TEMPERATURE UNIFORMITY
#74Method of manufacturing epitaxial silicon wafer and apparatus therefor
#75MANUFACTURING APPARATUS AND MANUFACTURING METHOD OF SILICON CARBIDE SINGLE CRYSTAL
#76Method for preparing ultraflat, atomically perfect areas on large regions of a crystal surface by heteroepitaxy deposition
#77Perovskite oxide, oxide composition, oxide body, piezoelectric device, and liquid discharge apparatus
#78In situ dopant implantation and growth of a III-nitride semiconductor body
#79Axial gradient transport growth process and apparatus utilizing resistive heating
#80Ferromagnetic semiconductor, method for the production thereof, components incorporating the same, and corresponding uses of said semiconductor
#81Method of manufacturing epitaxial silicon wafer and apparatus therefor
#82Self-assembled nanostructures
#83Process for manufacture of super lattice using alternating high and low temperature layers to block parasitic current path
#84Molecular beam source for use in accumulation of organic thin-films