121277 ⎘
Single-crystal growth by condensing evaporated or sublimed materials; Epitaxial-layer growth Heating of the deposition chamber, the substrate or the materials to be evaporated
Sub-classes:Multizone Zone Reactor for Crystal Growth
#2PVT METHOD AND APPARATUS FOR PRODUCING SINGLE CRYSTALS IN A SAFE PROCESS
#3MANAGING THE GROWTH OF SILICON CARBIDE CRYSTALS
#4Multilayer Seed for Single-Crystal Growth, Method of Producing a Multilayer Seed, Use of the Multilayer Seed in a PVT Process for Growing a Single-Crystal and PVT Process Using the Same
#5SILICON CARBIDE WAFER AND METHOD OF FORMING THE SAME
#6SILICON CARBIDE CRYSTAL BOULE AND MANUFACTURING METHOD THEREOF
#7ARRANGEMENT FOR GROWING A SIC VOLUME MONOCRYSTAL AND GROWING METHOD
#8CRUCIBLE FOR PRODUCING A SIC VOLUME MONO CRYSTAL AND A METHOD FOR GROWING A SIC VOLUME MONO CRYSTAL
#9ALUMINUM NITRIDE SINGLE CRYSTALS HAVING LARGE CRYSTAL AUGMENTATION PARAMETERS
#10DEVICES AND METHODS FOR GROWING CRYSTALS
#11PEROVSKITE OXIDE THIN FILM USING A SELECTIVE A-SITE ATOMIC GRADIENT AND METHOD OF PREPARATION THEREOF
#12PVT-method and device for producing single crystals in a safe manner with regard to the process
#13PREPARATION OF SHAPED CRYSTALLINE LAYERS
#14Sublimation System and Method of Growing at Least One Single Crystal of a Semiconductor Material
#15MATERIAL DEPOSITION SYSTEM EQUIPMENT MAINTENANCE
#16MATERIAL DEPOSITION SYSTEM EQUIPMENT MAINTENANCE
#17LARGE DIAMETER SILICON CARBIDE SINGLE CRYSTALS AND APPARATUS AND METHOD OF MANUFACTURE THEREOF
#18SYSTEM AND METHOD OF PRODUCING MONOCRYSTALLINE LAYERS ON A SUBSTRATE
#19METHOD OF GROWING HIGH-QUALITY SINGLE CRYSTAL SILICON CARBIDE
#20METHODS AND SYSTEMS FOR PRODUCING COMPOSITE CRYSTALS
#21SYSTEM AND METHOD OF PRODUCING MONOCRYSTALLINE LAYERS ON A SUBSTRATE
#22Method and Device for Producing a SiC Solid Material
#23CRYSTAL GROWTH FURNACE SYSTEM
#24METHOD FOR GROWING CRYSTALS
#25METHOD FOR PURIFYING A THALLIUM COMPOUND USING A CARBON POWDER
#26Superconductor-semiconductor fabrication
#27Crystal Growing Unit for Producing a Single Crystal
#28METHOD FOR DEPOSITING AN INORGANIC PEROVSKITE LAYER
#29Vapor phase epitaxial growth device
#30SIC SUBSTRATE, SIC SUBSTRATE PRODUCTION METHOD, SIC SEMICONDUCTOR DEVICE, AND SIC SEMICONDUCTOR DEVICE PRODUCTION METHOD
#31DEVICES AND METHODS FOR GROWING CRYSTALS
#32SILICON CARBIDE INGOT, METHOD OF PREPARING THE SAME, AND METHOD FOR PREPARING SILICON CARBIDE WAFER
#33METHOD FOR PRODUCING SEMICONDUCTOR SUBSTRATES AND DEVICE FOR PRODUCING SEMICONDUCTOR SUBSTRATES
#34SILICON CARBIDE INGOT MANUFACTURING METHOD AND SILICON CARBIDE INGOT MANUFACTURED THEREBY
#35SiC EPITAXIAL SUBSTRATE MANUFACTURING METHOD AND MANUFACTURING DEVICE THEREFOR
#36Method for manufacturing a SiC substrate by simultaneously forming a growth layer on one surface and etching another surface of a SiC base substrate
#37SiC material and method for manufacturing same
#38Fabrication methods
#39Silicon carbide ingot manufacturing method and silicon carbide ingot manufactured thereby
#40Devices and methods for growing crystals
#41Method for purifying a thallium compound using a carbon powder
#42SiC single crystal sublimation growth apparatus
#43REACTION CHAMBER COMPRISING A ROTATING ELEMENT FOR THE DEPOSITION OF A SEMICONDUCTOR MATERIAL
#44Method of manufacturing a silicon carbide ingot comprising moving a heater surrounding a reactor to induce silicon carbide raw materials to sublimate and growing the silicon carbide ingot on a seed crystal
#45Method for manufacturing rutile titanium dioxide layer and semiconductor device including the same
#46SYNTHESIS OF SINGLE CRYSTAL FILMS ON AMORPHOUS SUBSTRATES
#47METHOD FOR PRODUCING SILICON CARBIDE SINGLE CRYSTAL
#48Large diameter silicon carbide single crystals and apparatus and method of manufacture thereof
#49Crystal growth apparatus including heater with multiple regions and crystal growth method therefor
#50METHOD AND APPARATUS FOR MANUFACTURING SILICON CARBIDE SINGLE CRYSTAL
#51Silicon carbide ingot, method of preparing the same, and method for preparing silicon carbide wafer
#52Aluminum nitride single crystals having large crystal augmentation parameters
#53Apparatus and methods for alignment of a susceptor
#54Method for producing p-type 4H-SiC single crystal
#55Production method and growth arrangement for producing a bulk SiC single crystal by arranging at least two insulation cylinder components to control a variation in a volume element density
#56Superconductor-semiconductor fabrication
#57SiC single crystal production apparatus
#58Manufacturing method of SiC ingot
#59SiC single crystal manufacturing apparatus
#60Crystal growth apparatus, method for manufacturing silicon carbide single crystal, silicon carbide single crystal substrate, and silicon carbide epitaxial substrate
#61Shielding member and apparatus for single crystal growth
#62Fabrication methods
#63SiC-MONOCRYSTAL GROWTH CRUCIBLE
#64Furnace for seeded sublimation of wide band gap crystals
#65Apparatus provided with a crucible including a porous baffle plate therein for manufacturing compound single crystal and method for manufacturing compound single crystal
#66Large diameter silicon carbide single crystals and apparatus and method of manufacture thereof
#67Method for producing silicon carbide single crystal
#68n-Type SiC single crystal substrate, method for producing same and SiC epitaxial wafer
#69Method for evaluating tantalum carbide
#70SiC single crystal sublimation growth apparatus
#71Method of manufacturing SiC ingot
#72Device for measuring distribution of thermal field in crucible
#73Method for purifying an inorganic material using a tube having a bend between a first end and a second end of the tube
#74P-TYPE 4H-SIC SINGLE CRYSTAL AND METHOD FOR PRODUCING P-TYPE 4H-SIC SINGLE CRYSTAL
#75Molecular beam epitaxy under vector strong magnetic field and in-situ characterization apparatus thereof
#76Method for formation of a transition metal dichalcogenide (TMDC) material layer
#77Device for growing monocrystalline crystal
#78Furnace for seeded sublimation of wide band gap crystals
#79GaO-based crystal film, and crystal multilayer structure
#80Crystal growth apparatus, method for manufacturing silicon carbide single crystal, silicon carbide single crystal substrate, and silicon carbide epitaxial substrate
#81Method and device for producing a group 13 element nitride crystal using a shielding object
#82Molten target sputtering (MTS) deposition for enhanced kinetic energy and flux of ionized atoms
#83System for growth of large aluminum nitride single crystals with thermal-gradient control
#84Fabrication Method for Growing Single Crystal of Multi-Type Compound
#85METHOD FOR MANUFACTURING SILICON CARBIDE SINGLE CRYSTAL AND SILICON CARBIDE SUBSTRATE
#86METHOD AND APPARATUS FOR THE SELECTIVE DEPOSITION OF EPITAXIAL GERMANIUM STRESSOR ALLOYS
#87Method for manufacturing silicon carbide single crystal
#88Silicon carbide single crystal wafer and method of manufacturing a silicon carbide single crystal ingot
#89Method of manufacturing silicon carbide single crystal
#90SHIELD MEMBER AND APPARATUS FOR GROWING SINGLE CRYSTAL EQUIPPED WITH THE SAME
#91Apparatus and methods for alignment of a susceptor
#92Nanometer sized structures grown by pulsed laser deposition
#93Silicon carbide substrate, silicon carbide ingot, and methods for manufacturing silicon carbide substrate and silicon carbide ingot
#94Growth of large aluminum nitride single crystals with thermal-gradient control
#95Bulk silicon carbide having low defect density
#96Semi-insulating silicon carbide monocrystal and method of growing the same
#97Physical vapor transport growth system for simultaneously growing more than one SiC single crystal and method of growing
#98Process for growing silicon carbide single crystal by physical vapor transport method and annealing silicon carbide single crystal in situ
#99System and process for high-density, low-energy plasma enhanced vapor phase epitaxy
#100SILICON CARBIDE SUBSTRATE, SILICON CARBIDE INGOT, AND METHOD OF MANUFACTURING THE SAME
#101SILICON CARBIDE SUBSTRATE, SILICON CARBIDE SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING SILICON CARBIDE SUBSTRATE, AND METHOD FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE
#102Self-gettering differential pump
#103High heat-resistant member, method for producing the same, graphite crucible and method for producing single crystal ingot
#104APPARATUS FOR PRODUCING SILICON CARBIDE SINGLE CRYSTAL
#105Shield member and apparatus for growing single crystal equipped with the same
#106Method and apparatus for the selective deposition of epitaxial germanium stressor alloys
#107APPARATUS OF MANUFACTURING SILICON CARBIDE SINGLE CRYSTAL
#108SiC single crystal sublimation growth method and apparatus
#109Method for production of zinc oxide single crystals
#110Controlling an epitaxial growth process in an epitaxial reactor
#111Growth of large aluminum nitride single crystals with thermal-gradient control
#112Method for reducing defects in epitaxially grown on the group III-nitride materials
#113SILICON CARBIDE CRYSTAL, METHOD OF MANUFACTURING THE SAME, APPARATUS FOR MANUFACTURING THE SAME, AND CRUCIBLE
#114THERMALLY INSULATED CONFIGURATION AND METHOD FOR PRODUCING A BULK SIC CRYSTAL
#115Apparatus for crystal growth
#116Axial gradient transport growth process and apparatus utilizing resistive heating
#117DIFFERENTIATED-TEMPERATURE REACTION CHAMBER
#118Method and apparatus for the continuous production and functionalization of single-walled carbon nanotubes using a high frequency plasma torch
#119MBE DEVICE AND METHOD FOR THE OPERATION THEREOF
#120Method of controlling an epitaxial growth process in an epitaxial reactor
#121System and process for high-density, low-energy plasma enhanced vapor phase epitaxy
#122Batch reaction chamber employing separate zones for radiant heating and resistive heating
#123Manufacturing method and usage of crystallized metal oxide thin film
#124High quality silicon carbide crystals and method of making the same