121279 ⎘
Single-crystal growth by condensing evaporated or sublimed materials; Epitaxial-layer growth; Heating of the deposition chamber, the substrate or the materials to be evaporated Heating of the material to be evaporated
IN SITU DEFECT MITIGATION IN CRYSTAL GROWTH
#2METHODS FOR CRYSTAL GROWTH BY REPLACING A SUBLIMATED TARGET SOURCE MATERIAL WITH A CANDIDATE SOURCE MATERIAL
#3LARGE DIAMETER SILICON CARBIDE WAFERS
#4LARGE DIAMETER SILICON CARBIDE WAFERS
#5AlN SINGLE CRYSTAL SUBSTRATE AND DEVICE
#6AIN SINGLE CRYSTAL SUBSTRATE AND DEVICE
#7MANAGING GROWTH OF SILICON CARBIDE CRYSTALS
#8Improved Furnace Apparatus for Crystal Production With Seed Holder Repositioning Unit
#9CRYSTAL GROWTH METHODS AND DEVICES
#10SILICON CARBIDE SUBSTRATE, METHOD OF MANUFACTURING SILICON CARBIDE SUBSTRATE, AND MANUFACTURING APPARATUS FOR SILICON CARBIDE SUBSTRATE
#11SILICON CARBIDE CRYSTAL GROWTH SYSTEM AND METHOD THEREOF
#12NEUTRON-GENERATING TARGET AND METHOD FOR PRODUCING THE SAME
#13VAPOR PHASE TRANSPORT SYSTEM AND METHOD FOR DEPOSITING PEROVSKITE SEMICONDUCTORS
#14SILICON CARBIDE WAFER AND METHOD OF FABRICATING THE SAME
#15LARGE DIAMETER SILICON CARBIDE WAFERS
#16SINGLE CRYSTALLINE ALUMINUM NITRIDE SUBSTRATE AND OPTOELECTRONIC DEVICES MADE THEREFROM
#17Sublimation System And Method Of Growing At Least One Single Crystal
#18SIC SINGLE-CRYSTAL GROWTH APPARATUS
#19METHOD OF FABRICATING SILICON CARBIDE INGOT
#20SYSTEM FOR MANUFACTURING A HIGH-QUALITY SEMICONDUCTOR SINGLE CRYSTAL, AND METHOD OF MANUFACTURING SAME
#21SYSTEM FOR MANUFACTURING A HIGH-QUALITY SEMICONDUCTOR SINGLE CRYSTAL, AND METHOD OF MANUFACTURING SAME
#22SILICON CARBIDE CRYSTAL EXPANSION APPARATUS, SILICON CARBIDE CRYSTAL EXPANSION METHOD AND SILICON CARBIDE CRYSTAL EXPANSION PROCESS
#23METHODS AND APPARATUSES FOR CRYSTAL GROWTH
#24LAYER TRANSFER PROCESS
#25METHOD OF PROVIDING A REACTION CHAMBER, REACTION CHAMBER AND LASER EVAPORATION SYSTEM
#26Method and Device for Producing a SiC Solid Material
#27SIC SINGLE-CRYSTAL GROWTH APPARATUS AND METHOD OF GROWING SIC CRYSTAL
#28Method and Device for Producing a SiC Solid Material
#29HIGHLY ORIENTED, SINGLE-CRYSTALLINE LOW-DIMENSIONAL NANOSTRUCTURES, METHOD OF FABRICATION AND DEVICES
#30PRODUCTION METHOD FOR AN SIC VOLUME MONOCRYSTAL OF INHOMOGENEOUS SCREW DISLOCATION DISTRIBUTION AND SIC SUBSTRATE
#31Improved Furnace Apparatus for Crystal Production
#32Methods for preparing a monolayer or few-layer crystalline black phosphorous film on a two-dimensional surface by focusing a pulsed laser beam on a black phosphorous target
#33METHODS OF DEPOSITING FILMS WITH THE SAME STOICHIOMETRIC FEATURES AS THE SOURCE MATERIAL
#34Device for producing silicon carbide single crystals
#35EFFUSION CELL WITH RETRACTABLE CRUCIBLE FOR MOLECULAR BEAM EPITAXY
#36Apparatus for heating multiple crucibles
#37Aluminum nitride crystals having low urbach energy and high transparency to deep-ultraviolet wavelengths
#38METHOD FOR FORMING A LAYER WITH THE BASIC OF A PIEZOELECRIC MATERIAL AND SURFACE ACOUSTIC WAVE DEVICE USING SUCH A LAYER
#39Thermal control for formation and processing of aluminum nitride
#40SiC P-TYPE, AND LOW RESISTIVITY, CRYSTALS, BOULES, WAFERS AND DEVICES, AND METHODS OF MAKING THE SAME
#41METHOD OF ENHANCING SILICON CARBIDE MONOCRYSTALLINE GROWTH YIELD
#42MANUFACTURING METHOD OF MODIFIED ALUMINUM NITRIDE RAW MATERIAL, MODIFIED ALUMINUM NITRIDE RAW MATERIAL, MANUFACTURING METHOD OF ALUMINUM NITRIDE CRYSTALS, AND DOWNFALL DEFECT PREVENTION METHOD
#43METHOD AND APPARATUS FOR SYNCHRONOUS GROWTH OF SILICON CARBIDE CRYSTALS IN MULTIPLE CRUCIBLES
#44Method for producing SiC single crystal and method for suppressing dislocations in SiC single crystal
#45Method of single crystal growth by controlling the heating of a source material and the cooling of a backside of a lid
#46METHOD OF MANUFACTURING SILICON CARBIDE SEED CRYSTAL AND METHOD OF MANUFACTURING SILICON CARBIDE INGOT
#47Crucible having an improved crystal growth base for manufacturing silicon carbide single crystal and method of use
#48Suboxide molecular-beam epitaxy and related structures
#49VAPOR PHASE TRANSPORT SYSTEM AND METHOD FOR DEPOSITING PEROVSKITE SEMICONDUCTORS
#50Impurity control during formation of aluminum nitride crystals and thermal treatment of aluminum nitride crystals
#51SIC SINGLE CRYSTAL(S) DOPED FROM GAS PHASE
#52Manufacturing method of silicon carbide ingot
#53SILICON CARBIDE WAFER AND METHOD OF FABRICATING THE SAME
#54Silicon carbide ingot and method of fabricating the same
#55Manufacturing method of silicon carbide wafer and semiconductor structure
#56Silicon carbide seed crystal and method of manufacturing the same, and method of manufacturing silicon carbide ingot
#57Silicon carbide seed crystal and method of manufacturing silicon carbide ingot
#58SiC single crystal sublimation growth apparatus
#59Apparatus and method for growing high-purity semi-insulating silicon carbide crystal
#60Methods for crystal growth by replacing a sublimated target source material with a candidate source material
#61Epi-growth apparatus of separate chamber type
#62SIC CRYSTAL GROWTH DEVICE AND METHOD
#63SILICON CARBIDE SINGLE CRYSTAL GROWTH APPARATUS AND METHOD FOR MANUFACTURING SILICON CARBIDE SINGLE CRYSTAL
#64Large, UV-transparent aluminum nitride single crystals
#65METHOD OF FABRICATING METAL-NITRIDE VERTICALLY ALIGNED NANOCOMPOSITES
#66Large diameter silicon carbide wafers
#67SiC SUBSTRATE AND SiC SINGLE CRYSTAL MANUFACTURING METHOD
#68Vapor phase transport systems for depositing perovskite semiconductors
#69Single crystal epitaxial layer having a rhombohedral lattice
#70Thermal control for formation and processing of aluminum nitride
#71METHOD FOR MANUFACTURING SILICON CARBIDE SINGLE CRYSTAL
#72Method for producing bulk silicon carbide
#73METHOD FOR MANUFACTURING SILICON CARBIDE SINGLE CRYSTAL
#74Method of synthesizing molybdenum oxychloride by reacting molybdenum oxide powder and chlorine gas and growing crystals of molybdenum oxychloride from the gaseous raw material
#75Vapor phase transport system and method for depositing perovskite semiconductors
#76Method for producing ingot, raw material for ingot growth, and method for preparing the raw material
#77SiC single crystal growth crucible, SiC single crystal manufacturing method, and SiC single crystal manufacturing apparatus
#78Thermal control for formation and processing of aluminum nitride
#79SiC single crystal manufacturing apparatus and structure having container and filler for manufacturing SiC single crystal
#80Crystal growing apparatus and crucible having a main body portion and a first portion having a radiation rate different from that of the main body portion
#81Crystal growing apparatus and crucible having a main body portion and a low radiation portion
#82Method of producing SiC single crystal ingot
#83Stabilized, high-doped silicon carbide
#84Single crystal growth crucible and single crystal growth method
#85Single crystal growth method which includes covering a part of a surface of a raw material for sublimation with a metal carbide powder
#86n-Type 4H—SiC single crystal substrate and method of producing n-type 4H—SiC single crystal substrate
#87Crystal growth apparatus with controlled center position of heating
#88Aluminum nitride crystals having low urbach energy and high transparency to deep-ultraviolet wavelengths
#89Impurity control during formation of aluminum nitride crystals and thermal treatment of aluminum nitride crystals
#90Nanoscale device composing an elongated crystalline nanostructure
#91Shielding member and single crystal growth device having the same
#92Shielding member including a plurality of shielding plates arranged without gaps therebetween in plan view and apparatus for growing single crystals
#93Crucible and SiC single crystal growth apparatus
#94Aluminum nitride bulk crystals having high transparency to ultraviolet light and methods of forming them
#95Semiconductor Josephson junction and a transmon qubit related thereto
#96SiC single crystal sublimation growth apparatus
#97High breakdown strength ferroelectric SrHfOmaterials
#98Silicon Carbide Single Crystal Manufacturing Device
#99UV-transparent aluminum nitride single crystal having a diameter of 35 mm to 150 mm and a predefined UV transparency metric at a wavelength of 265 nm
#100Thermal control for formation and processing of aluminum nitride
#101Method for manufacturing silicon carbide single crystal
#102Method and system for fabrication of crystals using laser-accelerated particle beams or secondary sources
#103Self-limited organic molecular beam epitaxy for precisely growing ultrathin C8-BTBT, PTCDA and their heterojunctions on surface
#104Methods of growing CdTe-based materials at high rates
#105RF resonator membranes and methods of construction
#106(Sc,Y):AIN SINGLE CRYSTALS FOR LATTICE-MATCHED AIGaN SYSTEMS
#107Stabilized, high-doped silicon carbide
#108Device for growing monocrystalline crystal
#109Film forming apparatus
#110Method for manufacturing silicon carbide single crystal
#111METHOD OF MANUFACTURING SILICON CARBIDE SINGLE CRYSTAL
#112Passivation of laser facets and systems for performing the same
#113Effusion cells, deposition systems including effusion cells, and related methods
#114Deposition systems including effusion sources, and related methods
#115Semiconductor element, method for manufacturing same, semiconductor substrate, and crystal laminate structure
#116Methods of growing heteroepitaxial single crystal or large grained semiconductor films and devices thereon
#117Rhombohedron epitaxial growth with molten target sputtering
#118Film formation method, vacuum processing apparatus, method of manufacturing semiconductor light emitting element, semiconductor light emitting element, method of manufacturing semiconductor electronic element, semiconductor electronic element, and illuminating apparatus
#119Nanoscale device comprising an elongated crystalline nanostructure
#120Graphite crucible for sublimation growth of SiC crystal
#121Semiconductor josephson junction and a transmon qubit related thereto
#122Lattice matchable alloy for solar cells
#123Method for manufacturing a semiconductor material including a semi-polar III-nitride layer
#124DIRECT CONVERSION OF H-BN INTO C-BN AND STRUCTURES FOR A VARIETY OF APPLICATIONS
#125Synthesis and processing of novel phase of boron nitride (Q-BN)
#126Conversion of carbon into n-type and p-type doped diamond and structures
#127Synthesis and processing of Q-carbon, graphene, and diamond
#128Synthesis and processing of pure and NV nanodiamonds and other nanostructures
#129Synthesis and processing of novel phase of carbon (Q-carbon)
#130Doped rare earth nitride materials and devices comprising same
#131Method for synthesizing multilayer graphene
#132OFF-AXIS SPUTTERING DEPOSITION FOR GROWTH OF SINGLE CRYSTALLINE FILMS OF A BROAD RANGE OF COMPLEX MATERIALS
#133Radical generator and molecular beam epitaxy apparatus
#134Aluminum nitride bulk crystals having high transparency to ultraviolet light and methods of forming them
#135Silicon carbide substrate, silicon carbide ingot, and methods for manufacturing silicon carbide substrate and silicon carbide ingot
#136METHOD FOR MANUFACTURING MAGNETIC RECORDING MEDIUM
#137Substrate for epitaxial growth, and crystal laminate structure
#138Planar nonpolar group-III nitride films grown on miscut substrates
#139Semiconductor heterostructures having reduced dislocation pile-ups and related methods
#140Radical generator and molecular beam epitaxy apparatus
#141METHOD OF PRODUCING HIGH-PURITY CARBIDE MOLD
#142Method of manufacturing silicon carbide single crystal and silicon carbide single crystal substrate
#143Method of manufacturing silicon carbide single crystal
#144METHOD OF MANUFACTURING SILICON CARBIDE SINGLE CRYSTAL
#145Device of manufacturing silicon carbide single crystal
#146Method of manufacturing silicon carbide single crystal
#147Axial Gradient Transport (AGT) Growth Process and Apparatus Utilizing Resistive Heating
#148Magnetic material including α″-Fe(NZ)or a mixture of α″-FeZand α″-FeN, where Z includes at least one of C, B, or O
#149Method for producing single crystal
#150TUNED MATERIALS, TUNED PROPERTIES, AND TUNABLE DEVICES FROM ORDERED OXYGEN VACANCY COMPLEX OXIDES
#151Method for producing single crystal
#152CRUCIBLE AND METHOD FOR PRODUCING SINGLE CRYSTAL
#153Group III nitride bulk crystals and their fabrication method
#154GROUP III NITRIDE BULK CRYSTALS AND THEIR FABRICATION METHOD
#155Group III nitride bulk crystals and their fabrication method
#156GaAs thin films and methods of making and using the same
#157Defect reduction in seeded aluminum nitride crystal growth
#158MECHANICALLY ROBUST SILICON SUBSTRATE HAVING GROUP IIIA-N EPITAXIAL LAYER THEREON
#159Method of manufacturing silicon carbide substrate
#160SOLID-STATE BATTERY AND METHODS OF FABRICATION
#161Fabrication Method for Multi-junction Solar Cells
#162Apparatus for producing bulk silicon carbide
#163Method for producing bulk silicon carbide by sublimation of a silicon carbide precursor prepared from silicon and carbon particles or particulate silicon carbide
#164Method and apparatus for producing bulk silicon carbide using a silicon carbide seed
#165Method for producing bulk silicon carbide
#166METHOD FOR GROWING NON-POLAR M-PLANE EPITAXIAL LAYER OF WURTZITE SEMICONDUCTORS ON SINGLE CRYSTAL OXIDE SUBSTRATES
#167Semiconductor heterostructures having reduced dislocation pile-ups and related methods
#168Direct graphene growth on metal oxides by molecular epitaxy
#169Method for producing GaObased crystal film
#170ENHANCEMENT OF THERMOELECTRIC PROPERTIES THROUGH POLARIZATION ENGINEERING
#171Epitaxial thin film solid crystal electrolyte including lithium
#172Methods for growing III-V materials on a non III-V material substrate
#173Planar nonpolar group-III nitride films grown on miscut substrates
#174Vapour deposition process for the preparation of a phosphate compound
#175METHOD FOR GROWTH OF INGOT
#176Methods and systems for thin film deposition processes
#177Methods of producing large grain or single crystal films
#178Method for forming magnesium oxide thin film and processed plate
#179Method for growing a SiC crystal by vapor deposition onto a seed crystal provided on a support shelf which permits thermal expansion
#180Direct Growth of Graphene by Molecular Beam Epitaxy for the Formation of Graphene Heterostructures
#181Vapour deposition process for the preparation of a chemical compound
#182Scintillator, method of fabricating the same and X-ray detector including the scintillator
#183Multilayer substrate structure and method of manufacturing the same
#184LATTICE MATCHING LAYER FOR USE IN A MULTILAYER SUBSTRATE STRUCTURE
#185Wavelength converter for an LED and LED containing same
#186METHOD FOR MANUFACTURING SILICON CARBIDE SINGLE CRYSTAL
#187Non-polar plane of wurtzite structure material
#188APPARATUS AND METHOD FOR PRODUCTION OF ALUMINUM NITRIDE SINGLE CRYSTAL
#189Radical generator and molecular beam epitaxy apparatus
#190HIGHLY EPITAXIAL THIN FILMS FOR HIGH TEMPERATURE/HIGHLY SENSITIVE CHEMICAL SENSORS FOR CRITICAL AND REDUCING ENVIRONMENT
#191Perovskite manganese oxide thin film
#192Perovskite manganese oxide thin film and manufacturing method therefor
#193Lattice matchable alloy for solar cells
#194Method for manufacturing silicon carbide single crystal, and silicon carbide substrate
#195Method and apparatus for the selective deposition of epitaxial germanium stressor alloys
#196SUBSTRATE PROCESSING APPARATUS AND SOLID RAW MATERIAL REPLENISHING METHOD
#197OXIDE METAL SEMICONDUCTOR SUPERLATTICES FOR THERMOELECTRICS
#198Planar nonpolar group-III nitride films grown on miscut substrates
#199SILICON CARBIDE SUBSTRATE FABRICATION METHOD, SEMICONDUCTOR DEVICE FABRICATION METHOD, SILICON CARBIDE SUBSTRATE, AND SEMICONDUCTOR DEVICE
#200Semiconductor heterostructures having reduced dislocation pile-ups and related methods
#201SiC single crystal sublimation growth method and apparatus
#202Large area deposition in high vacuum with high thickness uniformity
#203LATTICE MATCHABLE ALLOY FOR SOLAR CELLS
#204Nitride semiconductor crystal manufacturing apparatus, nitride semiconductor crystal manufacturing method, and nitride semiconductor crystal
#205EVAPORATION SYSTEM
#206METHOD FOR PREPARING POLYCRYSTALS AND SINGLE CRYSTALS OF ZINC OXIDE (ZnO) ON A SEED BY CHEMICALLY ACTIVATED SUBLIMATION AT HIGH TEMPERATURE AND DEVICE FOR CARRYING OUT SAID METHOD
#207Semiconductor heterostructures having reduced dislocation pile-ups and related methods
#208Aluminum nitride bulk crystals having high transparency to ultraviolet light and methods of forming them
#209Compound semiconductor single-crystal manufacturing device and manufacturing method
#210AlN crystal and method for growing the same, and AlN crystal substrate
#211Molecular Beam Cell Having Purge Function
#212HIGH TEMPERATURE EVAPORATOR CELL HAVING PARALLEL-CONNECTED HEATING ZONES
#213Fabrication of SiC substrates with low warp and bow
#214Method for controlling the volume of a molecular beam
#215Doped Gallium Nitride Annealing
#216Axial gradient transport growth process and apparatus utilizing resistive heating
#217THIN FILM PRODUCING METHOD AND HEXAGONAL PIEZOELECTRIC THIN FILM PRODUCED THEREBY
#218METHOD AND APPARATUS FOR PRODUCING ONE-DIMENSIONAL NANOSTRUCTURE
#219Microwave heating for semiconductor nanostructure fabrication
#220Internal gear pump
#221EVAPORATION UNIT, EVAPORATION METHOD, CONTROLLER FOR EVAPORATION UNIT AND THE FILM FORMING APPARATUS
#222PROCESS FOR PRODUCING SILICON CARBIDE SINGLE CRYSTAL
#223Dense, shaped articles constructed of a refractory material and methods of preparing such articles
#224P-TYPE ZINC OXIDE THIN FILM AND METHOD FOR FORMING THE SAME
#225Process for depositing a thin film of metal alloy on a substrate and metal alloy in thin-film form
#226Apparatus for evaporation, a crucible for evaporation and a method of growing a film on a substrate
#227Source, an arrangement for installing a source, and a method for installing and removing a source
#228Apparatus for manufacturing single-crystal silicon carbide
#229Magnesium oxide single crystal and method for producing the same
#230SHAPED CRUCIBLE AND EVAPORATION APPARATUS HAVING SAME
#231Planar nonpolar m-plane group III nitride films grown on miscut substrates
#232High Temperature Vacuum Evaporation Apparatus
#233Material supply apparatus
#234Powder metallurgy crucible for aluminum nitride crystal growth
#235Apparatus For Vacuum Deposition With A Recharging Reservoir And Corresponding Process For Vacuum Deposition
#236Semiconductor heterostructures having reduced dislocation pile-ups and related methods
#237Phosphorus effusion cell arrangement and method for producing molecular phosphorus
#238Multi-piece ceramic crucible and method for making thereof
#239Vacuum Deposition Method and Sealed-Type Evaporation Source Apparatus for Vacuum Deposition
#240PBN container and method for producing PBN container
#241Crucible eliminating line of sight between a source material and a target
#242Large area deposition in high vacuum with high thickness uniformity
#243Method for controlling the volume of a molecular beam
#244Dense, shaped articles constructed of a refractory material and methods of preparing such articles
#245Effusion Cell Valve
#246Effusion cell and method for use in molecular beam deposition
#247Methods of fabricating semiconductor heterostructures
#248Powder metallurgy crucible for aluminum nitride crystal growth
#249Large area deposition in high vacuum with high thickness uniformity