121361 ⎘
Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state the diffusion materials being a compound of the elements to be diffused
METHODS FOR SELECTIVELY DEPOSITING A BORON DOPED SILICON GERMANIUM LAYER ON A SURFACE OF A SUBSTRATE
#2EXTREME LARGE GRAIN (1 MM) LATERAL GROWTH OF CD(SE,TE) ALLOY THIN FILMS BY REACTIVE ANNEALS
#3METHOD OF FORMING AN EPITAXIAL LAYER
#4Method for manufacturing substrate for solar cell and substrate for solar cell
#5STRUCTURES WITH BORON- AND GALLIUM-DOPED SILICON GERMANIUM LAYERS AND METHODS AND SYSTEMS FOR FORMING SAME
#6Extreme large grain (1 mm) lateral growth of Cd(Se,Te) alloy thin films by reactive anneals
#7LARGE-SCALE SYNTHESIS OF 2D SEMICONDUCTORS BY EPITAXIAL PHASE CONVERSION
#8METHOD FOR MANUFACTURING SUBSTRATE FOR SOLAR CELL AND SUBSTRATE FOR SOLAR CELL
#9Crystal laminate structure
#10Crystal laminate structure
#11Method for manufacturing substrate for solar cell and substrate for solar cell
#12METHODS FOR ATOM INCORPORATION INTO MATERIALS USING A PLASMA AFTERGLOW
#13Composition comprising an engineered defect concentration
#14Template for epitaxial growth, method for producing the same, and nitride semiconductor device
#15Laser media with controlled concentration profile of active laser ions and method of making the same
#16Selective Doping of a Material
#17Method for Doping Material and Doped Material
#18Single crystal heat treatment method
#19Single crystal heat treatment method