121360 ⎘
Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
Sub-classes:BORON-DOPED SINGLE-CRYSTAL DIAMOND FILM
#2METHOD FOR MANUFACTURING SILICON SUBSTRATE FOR QUANTUM COMPUTER, SILICON SUBSTRATE FOR QUANTUM COMPUTER, AND SEMICONDUCTOR APPARATUS
#3MULTI-LAYERED EPITAXIAL STACK FORMED IN A PRESENCE OF A HIGHER ORDER SILICON PRECURSOR
#4GALLIUM NITRIDE SINGLE CRYSTAL SUBSTRATE AND METHOD FOR PRODUCING THE SAME
#5PHOTOCONDUCTIVE THIN FILMS WITH PBSE NANOSTRUCTURES
#6HIGH-UNIFORMITY SiC CRYSTAL, CRYSTAL BAR, SUBSTRATE AND PREPARATION METHOD THEREOF, AND SEMICONDUCTOR DEVICE
#7LOW ENERGY TREATMENT TO PASSIVATE SiC SUBSTRATE DEFECTS
#8METHOD OF PRODUCING LARGE GaAs AND GaP INFRARED WINDOWS
#9Method of producing large GaAs and GaP infrared windows
#10METHOD OF SELECTIVELY FORMING CRYSTALLINE BORON-DOPED SILICON GERMANIUM ON A SURFACE
#11METHOD FOR MANUFACTURING SILICON SINGLE-CRYSTAL SUBSTRATE AND SILICON SINGLE-CRYSTAL SUBSTRATE
#12Fabrication of PBSE nanostructures by employing chemical bath deposition (CBD) for photonics applications
#13METHOD AND STRUCTURE OF SINGLE CRYSTAL ELECTRONIC DEVICES WITH ENHANCED STRAIN INTERFACE REGIONS BY IMPURITY INTRODUCTION
#14Laser Activated Luminescence System
#15Reflection mode dynode
#16EXPOSURE OF A SILICON RIBBON TO GAS IN A FURNACE
#17System and method for increasing group III-nitride semiconductor growth rate and reducing damaging ion flux
#18Method and structure of single crystal electronic devices with enhanced strain interface regions by impurity introduction
#19System and method for increasing III-nitride semiconductor growth rate and reducing damaging ion flux
#20Biotemplated perovskite nanomaterials
#21CONVERSION OF BORON NITRIDE INTO N-TYPE AND P-TYPE DOPED CUBIC BORON NITRIDE AND STRUCTURES
#22Synthesis and processing of novel phase of boron nitride (Q-BN)
#23Conversion of carbon into n-type and p-type doped diamond and structures
#24Synthesis and processing of Q-carbon, graphene, and diamond
#25Synthesis and processing of pure and NV nanodiamonds and other nanostructures
#26Synthesis and processing of novel phase of carbon (Q-carbon)
#27Semiconductor wafer and manufacturing method
#28Method for manufacturing graphene layer
#29Method of manufacturing a silicon ingot and silicon ingot
#30Methods for manufacturing architectural constructs
#31Method for boron doping silicon wafers
#32Silicon wafer
#33Diamond UV-sensor element and manufacturing method thereof, UV-sensor unit, and method of treating diamond single crystal
#34TiONnanotubes and method for preparing the same
#35SILICON WAFER
#36Method of reducing dislocations in group III nitride crystal, and substrate for epitaxial growth
#37Material and method of fabrication therefor
#38Method of enhancing performance of doped scintillation crystals
#39Method of producing an N-type diamond with high electrical conductivity
#40Method of enhancing performance of cerium doped lutetium orthosilicate crystals and crystals produced thereby
#41Diffusion system