ClassID:

121360

C30B31/06 - CPC Classification

Classification description:

Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state

Sub-classes:
Recent Application in this class:
#1
20260117417
2026-04-30

BORON-DOPED SINGLE-CRYSTAL DIAMOND FILM

#2
20260047406
2026-02-12

METHOD FOR MANUFACTURING SILICON SUBSTRATE FOR QUANTUM COMPUTER, SILICON SUBSTRATE FOR QUANTUM COMPUTER, AND SEMICONDUCTOR APPARATUS

#3
20260009155
2026-01-08

MULTI-LAYERED EPITAXIAL STACK FORMED IN A PRESENCE OF A HIGHER ORDER SILICON PRECURSOR

#4
20250263868
2025-08-21

GALLIUM NITRIDE SINGLE CRYSTAL SUBSTRATE AND METHOD FOR PRODUCING THE SAME

#5
20250146170
2025-05-08

PHOTOCONDUCTIVE THIN FILMS WITH PBSE NANOSTRUCTURES

#6
20250116032
2025-04-10

HIGH-UNIFORMITY SiC CRYSTAL, CRYSTAL BAR, SUBSTRATE AND PREPARATION METHOD THEREOF, AND SEMICONDUCTOR DEVICE

#7
20250112043
2025-04-03

LOW ENERGY TREATMENT TO PASSIVATE SiC SUBSTRATE DEFECTS

#8
20240184015
2024-06-06

METHOD OF PRODUCING LARGE GaAs AND GaP INFRARED WINDOWS

#9
20240183065
2024-06-06

Method of producing large GaAs and GaP infrared windows

#10
20230352301
2023-11-02

METHOD OF SELECTIVELY FORMING CRYSTALLINE BORON-DOPED SILICON GERMANIUM ON A SURFACE

#11
20230212782
2023-07-06

METHOD FOR MANUFACTURING SILICON SINGLE-CRYSTAL SUBSTRATE AND SILICON SINGLE-CRYSTAL SUBSTRATE

#12
20230160099
2023-05-25

Fabrication of PBSE nanostructures by employing chemical bath deposition (CBD) for photonics applications

#13
20230123976
2023-04-20

METHOD AND STRUCTURE OF SINGLE CRYSTAL ELECTRONIC DEVICES WITH ENHANCED STRAIN INTERFACE REGIONS BY IMPURITY INTRODUCTION

#14
20230062860
2023-03-02

Laser Activated Luminescence System

#15
20220223393
2022-07-14

Reflection mode dynode

#16
20220145494
2022-05-12

EXPOSURE OF A SILICON RIBBON TO GAS IN A FURNACE

#17
20200141026
2020-05-07

System and method for increasing group III-nitride semiconductor growth rate and reducing damaging ion flux

#18
20190259934
2019-08-22

Method and structure of single crystal electronic devices with enhanced strain interface regions by impurity introduction

#19
20180135202
2018-05-17

System and method for increasing III-nitride semiconductor growth rate and reducing damaging ion flux

#20
20180133693
2018-05-17

Biotemplated perovskite nanomaterials

#21
20170037540
2017-02-09

CONVERSION OF BORON NITRIDE INTO N-TYPE AND P-TYPE DOPED CUBIC BORON NITRIDE AND STRUCTURES

#22
20170037533
2017-02-09

Synthesis and processing of novel phase of boron nitride (Q-BN)

#23
20170037532
2017-02-09

Conversion of carbon into n-type and p-type doped diamond and structures

#24
20170037530
2017-02-09

Synthesis and processing of Q-carbon, graphene, and diamond

#25
20170036917
2017-02-09

Synthesis and processing of pure and NV nanodiamonds and other nanostructures

#26
20170036912
2017-02-09

Synthesis and processing of novel phase of carbon (Q-carbon)

#27
20160293712
2016-10-06

Semiconductor wafer and manufacturing method

#28
20160189821
2016-06-30

Method for manufacturing graphene layer

#29
20160130722
2016-05-12

Method of manufacturing a silicon ingot and silicon ingot

#30
20130064979
2013-03-14

Methods for manufacturing architectural constructs

#31
20120083105
2012-04-05

Method for boron doping silicon wafers

#32
20110053350
2011-03-03

Silicon wafer

#33
20110045173
2011-02-24

Diamond UV-sensor element and manufacturing method thereof, UV-sensor unit, and method of treating diamond single crystal

#34
20100044630
2010-02-25

TiONnanotubes and method for preparing the same

#35
20090261299
2009-10-22

SILICON WAFER

#36
20090136780
2009-05-28

Method of reducing dislocations in group III nitride crystal, and substrate for epitaxial growth

#37
20070190761
2007-08-16

Material and method of fabrication therefor

#38
20060011845
2006-01-19

Method of enhancing performance of doped scintillation crystals

#39
20050266606
2005-12-01

Method of producing an N-type diamond with high electrical conductivity

#40
20050253072
2005-11-17

Method of enhancing performance of cerium doped lutetium orthosilicate crystals and crystals produced thereby

#41
20050092244
2005-05-05

Diffusion system