ClassID:

121371

C30B31/20 - CPC Classification

Classification description:

Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor Doping by irradiation with electromagnetic waves or by particle radiation

Sub-classes:
Recent Application in this class:
#1
20240410083
2024-12-12

VOID DEFECT FORMING METHOD, DEVICE, AND DIAMOND MANUFACTURING METHOD

#2
20210371742
2021-12-02

Method of fluorescent nanodiamonds production

#3
20210197314
2021-07-01

Method for reducing the thickness of solid-state layers provided with components

#4
20210054526
2021-02-25

Nitrogen containing single crystal diamond materials optimized for magnetometry applications

#5
20200388538
2020-12-10

Method for producing wafers with modification lines of defined orientation

#6
20200029396
2020-01-23

THERMAL PROCESSING TECHNIQUES FOR METALLIC MATERIALS

#7
20200005957
2020-01-02

Apparatus and method for neutron transmutation doping of semiconductor wafers

#8
20180308698
2018-10-25

Apparatus and method for neutron transmutation doping of semiconductor wafers

#9
20170183795
2017-06-29

METHODS FOR ATOM INCORPORATION INTO MATERIALS USING A PLASMA AFTERGLOW

#10
20150315027
2015-11-05

Diamond material

#11
20140147998
2014-05-29

Ion implantation at high temperature surface equilibrium conditions

#12
20110220275
2011-09-15

Method for producing piezoelectric composite substrate and method for producing piezoelectric element

#13
20100329965
2010-12-30

Diamond material

#14
20100329962
2010-12-30

Diamond material

#15
20100329961
2010-12-30

Diamond material

#16
20100326135
2010-12-30

Diamond material

#17
20100052103
2010-03-04

SILICON WAFER AND METHOD FOR PRODUCING THE SAME

#18
20100051945
2010-03-04

Silicon wafer and method for producing the same

#19
20090302314
2009-12-10

P-TYPE ZINC OXIDE THIN FILM AND METHOD FOR FORMING THE SAME

#20
20090230513
2009-09-17

Compound semiconductor substrate and control for electrical property thereof

#21
20090221131
2009-09-03

Method for preparing substrate having monocrystalline film

#22
20090081856
2009-03-26

Single crystal silicon wafer for insulated gate bipolar transistors and process for producing the same

#23
20070186845
2007-08-16

Single crystal silicon wafer for insulated gate bipolar transistors

#24
20050082542
2005-04-21

Methods of forming power semiconductor devices using boule-grown silicon carbide drift layers and power semiconductor devices formed thereby

#25
15586943
2019-05-14

Methods of doping semiconductor materials and metastable doped semiconductor materials produced thereby