121372 ⎘
Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor; Doping by irradiation with electromagnetic waves or by particle radiation by ion-implantation
MANUFACTURING PROCESS FOR VERTICAL GaN-BASED MICROELECTRONIC DEVICES
#2LARGE DIAMETER SILICON CARBIDE WAFERS
#3LARGE DIAMETER SILICON CARBIDE WAFERS
#4Ion Beam-Induced Epitaxial Crystallization on an Integrated Processing Architecture
#5COMPOSITE SUBSTRATE FOR TRANSFERRING SiC SINGLE CRYSTAL, METHOD FOR MANUFACTURING COMPOSITE SUBSTRATE FOR TRANSFERRING SiC SINGLE CRYSTAL, AND METHOD FOR MANUFACTURING SiC BONDED SUBSTRATE
#6METHOD FOR PRODUCING A SEMICONDUCTOR BODY, SEMICONDUCTOR BODY AND POWER SEMICONDUCTOR DEVICE
#7COMPOUND SEMICONDUCTOR AND MANUFACTURING METHOD OF COMPOUND SEMICONDUCTOR
#8Systems and Methods for Substituent Doping of Diamonds
#9DIAMOND COMPOSITE BODY, SUBSTRATE, DIAMOND, TOOL INCLUDING DIAMOND, AND METHOD FOR MANUFACTURING DIAMOND
#10METHOD FOR THE FABRICATION OF P-TYPE Ga2O3 BY PHOSPHORUS ION IMPLANTATION
#11LOW ENERGY TREATMENT TO PASSIVATE SiC SUBSTRATE DEFECTS
#12SILICON CARBIDE HETEROJUNCTION NORMALLY-OFF HIGH-ELECTRON-MOBILITY TRANSISTOR AND METHOD FOR PREPARING THE SAME
#13SEED SUBSTRATE FOR EPITAXIAL GROWTH AND METHOD FOR PRODUCING SAME, AND SEMICONDUCTOR SUBSTRATE AND METHOD FOR PRODUCING SAME
#14LARGE DIAMETER SILICON CARBIDE WAFERS
#15SUPPORT PLATE, SUPPORT TOOL, AND METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE
#16SINGLE CRYSTAL DIAMOND COMPONENT AND METHOD FOR PRODUCING
#17PROCESS FOR PRODUCING ROLLS AND MEMBRANES OF SUBMICROMETRIC THICKNESS OF GA2O3 BY ION IMPLANTATION
#18COMPOSITE SUBSTRATE AND PREPARATION METHOD THEREOF, AND SEMICONDUCTOR DEVICE STRUCTURE
#19SOLID STATE ELECTRIC FIELD SENSOR
#20SEED SUBSTRATE FOR EPITAXIAL GROWTH USE AND METHOD FOR MANUFACTURING SAME, AND SEMICONDUCTOR SUBSTRATE AND METHOD FOR MANUFACTURING SAME
#21SUBSTRATES FOR OPTOELECTRONIC DEVICES AND METHODS OF MANUFACTURING SAME
#22METHOD FOR PRODUCING A SUBSTRATE FOR THE EPITAXIAL GROWTH OF A LAYER OF A GALLIUM-BASED III-N ALLOY
#23METHOD FOR PRODUCING A SUBSTRATE FOR EPITAXIAL GROWTH OF A GALLIUM-BASED III-N ALLOY LAYER
#24SUBSTRATE FOR GROUP-III NITRIDE EPITAXIAL GROWTH AND METHOD FOR PRODUCING THE SAME
#25EPITAXIAL SILICON WAFER, METHOD FOR PRODUCING SAME, AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICE
#26Method for producing a composite structure comprising a thin layer of monocrystalline sic on a carrier substrate of polycrystalline SiC
#27LARGE-DIAMETER SUBSTRATE FOR GROUP-III NITRIDE EPITAXIAL GROWTH AND METHOD FOR PRODUCING THE SAME
#28Method for manufacturing a composite structure comprising a thin layer made of monocrystalline sic on a carrier substrate made of SiC
#29METHOD FOR TRANSFERRING A USEFUL LAYER OF CRYSTALLINE DIAMOND ONTO A SUPPORTING SUBSTRATE
#30Method for manufacturing a composite structure comprising a thin layer made of monocrystalline SiC on a carrier substrate made of SiC
#31METHOD FOR ON-SILICON INTEGRATION OF A COMPONENT III-V AND ON-SILICON INTEGRATED COMPONENT III-V
#32SEMICONDUCTOR DEVICE
#33METHOD OF GENERATING A DETERMINISTIC COLOR CENTER IN A DIAMOND
#34Wavelength conversion element and method for producing same
#35Method for producing GaN laminate substrate having front surface which is Ga polarity surface
#36Diamond composite body, substrate, diamond, tool including diamond, and method for manufacturing diamond
#37Large diameter silicon carbide wafers
#38Method for producing GaN layered substrate
#39Epitaxial structure of N-face group III nitride, active device, and method for fabricating the same with integration and polarity inversion
#40Semiconductor devices with superjunction structures
#41Crystal laminate, semiconductor device and method for manufacturing the same
#42Method of separating a film from a main body of a crystalline object
#43Nitride semiconductor laminate, semiconductor device, method of manufacturing nitride semiconductor laminate, method of manufacturing nitride semiconductor free-standing substrate and method of manufacturing semiconductor device
#44Method of manufacturing diamond, diamond, diamond composite substrate, diamond joined substrate, and tool
#45Method for manufacturing silicon carbide epitaxial substrate and method for manufacturing semiconductor device
#46Method for manufacturing semiconductor devices with superjunction structures
#47Method for manufacturing a power semiconductor device having a reduced oxygen concentration
#48Sapphire composite base material and method for producing the same
#49Epitaxial structure of N-face group III nitride, active device, and method for fabricating the same with integration and polarity inversion
#50Methods of planarizing SiC surfaces
#51Method for manufacturing silicon-carbide semiconductor element
#52Method for producing composite wafer having oxide single-crystal film
#53Composite diamond body and composite diamond tool
#54Diamond composite body, substrate, diamond, tool including diamond, and method for manufacturing diamond
#55Method of manufacturing diamond, diamond, diamond composite substrate, diamond joined substrate, and tool
#56Semiconductor element, method for manufacturing same, semiconductor substrate, and crystal laminate structure
#57Semiconductor device manufacturing method and semiconductor device
#58CONVERSION OF BORON NITRIDE INTO N-TYPE AND P-TYPE DOPED CUBIC BORON NITRIDE AND STRUCTURES
#59Synthesis and processing of novel phase of boron nitride (Q-BN)
#60Conversion of carbon into n-type and p-type doped diamond and structures
#61Synthesis and processing of Q-carbon, graphene, and diamond
#62Synthesis and processing of pure and NV nanodiamonds and other nanostructures
#63Synthesis and processing of novel phase of carbon (Q-carbon)
#64Diamond components for quantum imaging, sensing and information processing devices
#65Diamond single crystal and production method thereof, and single crystal diamond tool
#66Method for manufacturing silicon-carbide semiconductor element
#67Multi-step ion implantation
#68Method for controlling donor concentration in GaO-based and method for forming ohmic contact
#69Surface treatment method for single crystal SiC substrate, and single crystal SiC substrate
#70Method for producing nanocarbon film and nanocarbon film
#71Epitaxial wafer and method for fabricating the same
#72Method for producing semiconductor device
#73Sapphire property modification through ion implantation
#74Ion implant indicia for cover glass or display component
#75Diamond sensors, detectors, and quantum devices
#76Large area deposition and doping of graphene, and products including the same
#77Laser crystal components joined with thermal management devices
#78Black Silicon Solar Cell and Its Preparation Method
#79Method for producing single-crystal diamond movable structure
#80Monocrystalline substrate including lattice matching atoms in a near surface region and a monocrystalline layer disposed on the substrate
#81Laser crystal components joined with thermal management devices
#82Diamond material
#83Engineered Substrate for Light Emitting Diodes
#84Method for manufacturing the color controlled sapphire
#85Large area deposition and doping of graphene, and products including the same
#86GaN Nanorod Arrays Formed by Ion Beam Implantation
#87Method for manufacturing SOI substrate
#88Group III nitride semiconductor composite substrate, group III nitride semiconductor substrate, and group III nitride semiconductor composite substrate manufacturing method
#89Method for separating surface layer or growth layer of diamond
#90METHOD AND SYSTEM FOR LOW TEMPERATURE ION IMPLANTATION
#91Method for improving the quality of a SiC crystal
#92Method including producing a monocrystalline layer
#93PROCESS FOR PRODUCING SINGLE-CRYSTAL SUBSTRATE WITH OFF ANGLE
#94Process for transferring films
#95Formation method of single crystal semiconductor layer, formation method of crystalline semiconductor layer, formation method of polycrystalline layer, and method for manufacturing semiconductor device
#96Method for improving the quality of a SiC crystal
#97SiC crystal semiconductor device
#98Compound semiconductor modified surface by use of pulsed electron beam and ion implantation through a deposited metal layer
#99Method for improving the quality of an SiC crystal and an SiC semiconductor device
#100Grown diamond mosaic separation
#101Method for producing a semiconductor wafer
#102Diamond structure separation
#103Method to fabricate patterned strain-relaxed SiGe epitaxial with threading dislocation density control
#104Method to reduce crystal defects particularly in group III-nitride layers and substrates