207102 ⎘
Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof; Manufacture or treatment of semiconductor devices or of parts thereof; Forming layers; Forming inorganic semiconducting materials on a substrate; Formation types; Deposition types Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
Method for producing a semiconductor device
#302Method of manufacturing finfet devices using narrow and wide gate cut openings in conjunction with a replacement metal gate process
#303RF grounding configuration for pedestals
#304Selective deposition of hardmask
#305Three-dimensional semiconductor devices
#306METHODS OF TREATING A SUBSTRATE TO FORM A LAYER THEREON FOR APPLICATION IN SELECTIVE DEPOSITION PROCESSES
#307FinFET device with a wrap-around silicide source/drain contact structure
#308Manufacturing method of semiconductor device
#309MEMORY DEVICE
#310Process enhancement using double sided epitaxial on substrate
#311Platform and method of operating for integrated end-to-end area-selective deposition process
#312Platform and method of operating for integrated end-to-end area-selective deposition process
#313Method for FinFET LDD doping
#314Semiconductor devices
#315Method of fabricating three-dimensional semiconductor memory device
#316Three-dimensional memory device
#317Semiconductor device
#318IC unit and method of manufacturing the same, and electronic device including the same
#319METHOD AND APPARATUS OF FORMING STRUCTURES BY SYMMETRIC SELECTIVE PHYSICAL VAPOR DEPOSITION
#320Multi-tier memory device with rounded top part of joint structure and methods of making the same
#321Semiconductor device including stressed source/drain, method of manufacturing the same and electronic device including the same
#322FIELD-EFFECT TRANSISTORS WITH FINS FORMED BY A DAMASCENE-LIKE PROCESS
#323GaN material and method of manufacturing semiconductor device
#324Semiconductor structures and methods with high mobility and high energy bandgap materials
#325FinFET device and method of forming same
#326Self-limiting and confining epitaxial nucleation
#327Self-limiting and confining epitaxial nucleation
#328Semiconductor devices and methods for manufacturing the same
#329Gate cut and fin trim isolation for advanced integrated circuit structure fabrication
#330Substrate having two semiconductor materials on insulator
#331Method for FinFET LDD doping
#332Memory device and method for manufacturing memory device
#333Effective junction formation in vertical transistor structures by engineered bottom source/drain epitaxy
#334EFFECTIVE JUNCTION FORMATION IN VERTICAL TRANSISTOR STRUCTURES BY ENGINEERED BOTTOM SOURCE/DRAIN EPITAXY
#335Strained silicon germanium fin with block source/drain epitaxy and improved overlay capacitance
#336Field-effect transistors with airgaps
#337SEMICONDUCTOR DEVICE
#338Repaired mask structures and resultant underlying patterned structures
#339Memory arrays
#340Effective junction formation in vertical transistor structures by engineered bottom source/drain epitaxy
#341Self-limiting and confining epitaxial nucleation
#342Semiconductor device
#343FinFET devices
#344Epitaxial source or drain structures for advanced integrated circuit structure fabrication
#345Gate line plug structures for advanced integrated circuit structure fabrication
#346Replacement gate structures for advanced integrated circuit structure fabrication
#347Dual metal gate structures for advanced integrated circuit structure fabrication
#348Differentiated voltage threshold metal gate structures for advanced integrated circuit structure fabrication
#349Semiconductor device and manufacturing method thereof
#350Semiconductor device and manufacturing method thereof
#351Heterogeneous metal line compositions for advanced integrated circuit structure fabrication
#352Fin cut and fin trim isolation for advanced integrated circuit structure fabrication
#353Plugs for interconnect lines for advanced integrated circuit structure fabrication
#354Trench isolation for advanced integrated circuit structure fabrication
#355Etching method and methods of manufacturing semiconductor device using the same
#356Contact over active gate structures for advanced integrated circuit structure fabrication
#357FinFET with sigma recessed source/drain and un-doped buffer layer epitaxy for uniform junction formation
#358Semiconductor device and manufacturing method thereof
#359Embedded memory using SOI structures and methods
#360Epitaxial structures for fin-like field effect transistors
#361Methods of manufacturing vertical semiconductor devices
#362Method of manufacturing three-dimensional stacked semiconductor structure and structure manufactured by the same
#363Semiconductor device
#364Method of forming epitaxial silicon layer and semiconductor device thereof
#365Method for fabricating semiconductor device
#366Semiconductor device with cap element
#367Hybrid scheme for improved performance for P-type and N-type FinFETs
#368Field effect transistor and process of forming the same
#369Epitaxy source/drain regions of FinFETs and method forming same
#370Field-effect transistors with fins formed by a damascene-like process
#371Semiconductor devices and methods of manufacturing the same
#372One-dimensional nanostructure growth on graphene and devices thereof
#373Memory device
#374Device, a method used in forming a circuit structure, a method used in forming an array of elevationally-extending transistors and a circuit structure adjacent thereto
#375Semiconductor device with high-quality epitaxial layer and method of manufacturing the same
#376FinFET device and method of forming same
#377Three-dimensional memory device and fabricating method thereof
#378Memory device and method for manufacturing memory device
#379Hybrid scheme for improved performance for P-type and N-type FinFETs
#380Semiconductor device and method for manufacturing semiconductor device
#381Crystalline film, semiconductor device including crystalline film, and method for producing crystalline film
#382Vertical-transport field-effect transistors with an etched-through source/drain cavity
#383Fabrication of a transistor with a channel structure and semimetal source and drain regions
#384Source and drain stressors with recessed top surfaces
#385Vertical memory devices
#386Method for depositing a group IV semiconductor and related semiconductor device structures
#387Three-dimensional memory device having on-pitch drain select gate electrodes and method of making the same
#388SHAPED CAVITY FOR EPITAXIAL SEMICONDUCTOR GROWTH
#389FinFET devices
#390Semiconductor structure with doped layers on fins and fabrication method thereof
#391Semiconductor device and method of manufacturing the same
#392FinFET devices
#393FinFET with sigma recessed source/drain and un-doped buffer layer epitaxy for uniform junction formation
#394Method and structure of stacked FinFET
#395Semiconductor device including insulating layers and method of forming the same
#396Semiconductor epitaxy bordering isolation structure
#397Selective Deposition Of Silicon Using Deposition-Treat-Etch Process
#398FinFET device having flat-top epitaxial features and method of making the same
#399Lateral GaN PN junction diode enabled by sidewall regrowth
#400Self aligned top extension formation for vertical transistors
#401Isolated semiconductor layer in bulk wafer by localized silicon epitaxial seed formation
#402Three-dimensional semiconductor devices
#403Semiconductor devices and methods of manufacturing the same
#404Semiconductor device including a blocking layer having a varying thickness
#405Doping channels of edge cells to provide uniform programming speed and reduce read disturb
#406Aluminum-rich field-plated nitride transistors for record high currents
#407Self-aligned bipolar junction transistors with a base grown in a dielectric cavity
#408Self-aligned process for sub-10nm fin formation
#409SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME
#410Method of manufacturing semiconductor device
#411MEMORY DEVICE
#412Semiconductor device and method of manufacturing the same
#413Method for reducing threading dislocation of semiconductor device
#414Fabrication of semiconductor junctions
#415Semiconductor device with lifetime killers and method of manufacturing the same
#416Three-dimensional non-volatile semiconductor memory device having replacement gate
#417SEMICONDUCTOR DEVICES INCLUDING VARIED DEPTH RECESSES FOR CONTACTS
#418Devices having a semiconductor material that is semimetal in bulk and methods of forming the same
#419Method and apparatus for depositing a monolayer on a three dimensional structure
#420Source and drain formation technique for fin-like field effect transistor
#421Method for reducing contact resistance in semiconductor structures
#422Indium phosphide smoothing and chemical mechanical planarization processes
#423Semiconductor device having an ohmic electrode including a nickel silicide layer
#424Method to enhance growth rate for selective epitaxial growth
#425Structure and formation method of semiconductor device structure
#426Semiconductor device having two spacers
#427Process for forming a film on a substrate using multi-port injection assemblies
#428Surround gate transistor and method for producing the same
#429Control wafer making device
#430IC unit and methond of manufacturing the same, and electronic device including the same
#431Nanowire bundle and method of manufacturing nanostructure
#432Semiconductor device, method of manufacturing the same and electronic device including the same
#433Semiconductor device, method of manufacturing the same and electronic device including the device
#434Isolated semiconductor layer over buried isolation layer
#435FinFET devices
#436Methods of fabricating three-dimensional semiconductor devices
#437Method of doped germanium formation
#438FinFET with reduced series total resistance
#439FinFET devices
#440INTEGRATED SYSTEM FOR SEMICONDUCTOR PROCESS
#441Manufacturing method of semiconductor device
#442METHODS AND APPARATUS FOR DEPOSITION PROCESSES
#443Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium
#444Integrated circuits having source/drain structure
#445Method for reducing contact resistance in semiconductor structures
#446Source and drain stressors with recessed top surfaces
#447Gate length controlled vertical FETs
#448Semiconductor memory device and method for manufacturing same
#449Method of concurrently forming source/drain and gate contacts and related device
#450Vertical transistor with variable gate length
#451Asymmetric FET
#452Semiconductor memory device and method for manufacturing same
#453Method of manufacturing semiconductor device, and semiconductor manufacturing apparatus
#454Compound semiconductor substrate and method of forming a compound semiconductor substrate
#455III-V compound semiconductor channel post replacement gate
#456Methods for forming fin structures with desired profile for 3D structure semiconductor applications
#457Method of concurrently forming source/drain and gate contacts and related device
#458Method for fabricating a Fin field effect transistor (FinFET)
#459Semiconductor fabrication method including non-uniform cover layer
#460Method for forming semiconductor structure having stress layers
#461Method for producing a semiconductor chip and semiconductor chip
#462One-dimensional nanostructure growth on graphene and devices thereof
#463Integrated circuits with selectively strained device regions and methods for fabricating same
#464Gallium nitride nanowire based electronics
#465Strained structure of a semiconductor device
#466Domain wall magnetic memory
#467Radial and thickness control via biased multi-port injection settings
#468High voltage field effect transistors
#469Memory device with multi-layer channel and charge trapping layer
#470Semiconductor device having field plate structures, source regions and gate electrode structures between the field plate structures
#471Single source/drain epitaxy for co-integrating nFET semiconductor fins and pFET semiconductor fins
#472Methods and structures to prevent sidewall defects during selective epitaxy
#473Selective nanoscale growth of lattice mismatched materials
#474Semiconductor devices
#475Semiconductor device and method for manufacturing semiconductor device
#476Method for removing crystal originated particles from a crystalline silicon body using an etch process
#477Light emitting diode device having III-nitride nanowires, a shell layer and a continuous layer
#478Electronic device, stacked structure, and manufacturing method of the same
#479Method for forming a semiconductor structure containing high mobility semiconductor channel materials
#480Strained silicon germanium fin with block source/drain epitaxy and improved overlay capacitance
#481Method for forming a semiconductor structure containing high mobility semiconductor channel materials
#482Germanium smoothing and chemical mechanical planarization processes
#483Semiconductor structures
#484Hybrid multilayer device
#485Process of forming semiconductor optical device and semiconductor optical device
#486Semiconductor devices and methods of manufacturing the same
#487MOSFET
#488Semiconductor fins for FinFET devices and sidewall image transfer (SIT) processes for manufacturing the same
#489Semiconductor fins for FinFET devices and sidewall image transfer (SIT) processes for manufacturing the same
#490Semiconductor fins for finFET devices and sidewall image transfer (SIT) processes for manufacturing the same
#491Control wafer making device and method for measuring and monitoring control wafer
#492Semiconductor structures and methods with high mobility and high energy bandgap materials
#493Semiconductor device and method for fabricating the same
#494FinFET device having flat-top epitaxial features and method of making the same
#495Method for fabricating semiconductor device
#496Manufacturing method of semiconductor structure for improving quality of epitaxial layers
#497FinFET doping methods and structures thereof
#498Method and structure to fabricate closely packed hybrid nanowires at scaled pitch
#499Polyhedron of which upper width is narrower than lower width, manufacturing method therefor, and photoelectric conversion device comprising same
#500Methods of forming silicon germanium tin films and structures and devices including the films
#501Method for fabricating a strained structure and structure formed
#502Selective epitaxy growth for semiconductor devices with fin field-effect transistors (FinFET)
#503Forming zig-zag trench structure to prevent aspect ratio trapping defect escape
#504Method for substrate processing using exhaust ports
#505Semiconductor devices and methods for manufacturing the same
#506FinFET devices
#507Enhanced defect reduction for heteroepitaxy by seed shape engineering
#508Method and structure of stacked FinFET
#509Semiconductor device and method for manufacturing the same
#510Devices having a semiconductor material that is semimetal in bulk and methods of forming the same
#511Structure and method for compressively strained silicon germanium fins for pFET devices and tensily strained silicon fins for nFET devices
#512Substrate having two semiconductor materials on insulator
#513Three dimensional memory device and method for fabricating the same
#514Semiconductor devices including a stressor in a recess and methods of forming the same
#515Germanium smoothing and chemical mechanical planarization processes
#516Indium phosphide smoothing and chemical mechanical planarization processes
#517Fabrication of semiconductor junctions
#518Semiconductor device and method of fabricating the same
#519Dielectric isolated SiGe fin on bulk substrate
#520Semiconductor devices including source/drain regions having multiple epitaxial patterns
#521Semiconductor devices having source/drain regions with strain-inducing layers and methods of manufacturing such semiconductor devices
#522Diode-based devices and methods for making the same
#523Epitaxial source region for uniform threshold voltage of vertical transistors in 3D memory devices
#524Method and structure to fabricate closely packed hybrid nanowires at scaled pitch
#525FET with local isolation layers on S/D trench sidewalls
#526Method and structure to fabricate closely packed hybrid nanowires at scaled pitch
#527Integrated circuits having tunnel transistors and methods for fabricating the same
#528SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME
#529Semiconductor devices
#530Complementary heterogeneous MOSFET using global SiGe substrate and hard-mask memorized germanium dilution for nFET
#531METHOD AND APPARATUS FOR THE SELECTIVE DEPOSITION OF EPITAXIAL GERMANIUM STRESSOR ALLOYS
#532Fabricating method of a strained FET
#533METHODS OF FORMING REPLACEMENT FINS COMPRISED OF MULTIPLE LAYERS OF DIFFERENT SEMICONDUCTOR MATERIALS
#534Semiconductor device having embedded strain-inducing pattern and method of forming the same
#535SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
#536Semiconductor wafer for integrated packages
#537Vertical CMOS structure and method
#538III-N transistors with enhanced breakdown voltage
#539METHOD OF SELECTIVE EPITAXY
#540FinFET devices
#541Formation of strained fins in a finFET device
#542FinFET devices
#543FinFET devices
#544Isolated semiconductor layer over buried isolation layer
#545Method for selectively depositing a layer on a three dimensional structure
#546Formation method of semiconductor device structure with cap element
#547INJECTOR FOR SEMICONDUCTOR EPITAXY GROWTH
#548Gallium nitride apparatus with a trap rich region
#549SEMICONDUCTOR DEVICES INCLUDING VARIED DEPTH RECESSES FOR CONTACTS
#550Semiconductor structures and methods of forming the same
#551FinFET having buffer layer between channel and substrate
#552Method for forming semiconductor structure
#553Fin field effect transistor including a strained epitaxial semiconductor shell
#554Fin field effect transistor including a strained epitaxial semiconductor shell
#555Method for fabricating an improved field effect device
#556Non-volatile memory device
#557Manufacturing method for forming semiconductor structure
#558Structures and devices including germanium-tin films and methods of forming same
#559Monitor method for process control in a semiconductor fabrication process
#560Semiconductor devices having source/drain regions with strain-inducing layers and methods of manufacturing such semiconductor devices
#561Semiconductor device with rear-side insert structure
#562Method of manufacturing a semiconductor device having a rear-side insert structure
#563Method to enhance growth rate for selective epitaxial growth
#564SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICE
#565Method of forming 3D vertical NAND with III-V channel
#566Partially recessed channel core transistors in replacement gate flow
#567Method of manufacturing semiconductor device
#568Semiconductor device, method for manufacturing the same and power converter
#569Asymmetric FET
#570Semiconductor devices and methods of manufacture thereof
#571Methods of forming embedded source/drain regions on finFET devices
#572Epitaxial growth of crystalline material
#573Methods of forming nano-scale and micro-scale structured materials and materials formed thereby
#574Semiconductor device and method of manufacturing semiconductor device
#575Method for making source and drain regions of a MOSFET with embedded germanium-containing layers having different germanium concentration
#576Method of formation of germanium nanowires on bulk substrates
#577Plasma pre-clean module and process
#578Semiconductor devices
#579Semiconductor devices and fabrication method thereof
#580Epitaxial silicon germanium fin formation using sacrificial silicon fin templates
#581Fin field effect transistor
#582Epitaxial silicon germanium fin formation using sacrificial silicon fin templates
#583Vertical gate all around (VGAA) devices and methods of manufacturing the same
#584Vertical CMOS structure and method
#585Depression filling method and processing apparatus
#586Formation of strained fins in a finFET device
#587Planar nonpolar group-III nitride films grown on miscut substrates
#588Nanowire transistor device and method for manufacturing nanowire transistor device
#589Isolated semiconductor layer in bulk wafer by localized silicon epitaxial seed formation
#590Single source/drain epitaxy for co-integrating nFET semiconductor fins and pFET semiconductor fins
#591Semiconductor device having field plate structures and gate electrode structures between the field plate structures
#592Semiconductor device having embedded strain-inducing pattern and method of forming the same
#593III-V nanowire FET with compositionally-graded channel and wide-bandgap core
#594Non-planar semiconductor device with aspect ratio trapping
#595Methods and structures to prevent sidewall defects during selective epitaxy
#596Controlled manufacturing method of metal oxide semiconductor and metal oxide semiconductor structure having controlled growth crystallographic plane
#597Vertical nanowire transistor with axially engineered semiconductor and gate metallization
#598Uniform thickness blocking dielectric portions in a three-dimensional memory structure
#599Selective floating gate semiconductor material deposition in a three-dimensional memory structure
#600Vertical fin eDRAM