207160 ⎘
Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof; Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising cuprous oxide or cuprous iodide; Preparation of the foundation plate, preliminary treatment oxidation of the foundation plate, reduction treatment Oxidation and subsequent heat treatment of the foundation plate
BONDED OBJECT PRODUCTION METHOD AND PRODUCTION METHOD FOR CERAMIC CIRCUIT SUBSTRATE USING SAME
#2METHOD FOR PLANARIZING WAFER SURFACE
#3Annealing method for improving bonding strength
#4Method and device for processing photoresist component