H01L21/167 - CPC Classification

Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof; Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising cuprous oxide or cuprous iodide; Preparation of the foundation plate, preliminary treatment oxidation of the foundation plate, reduction treatment Application of a non-genetic conductive layer