207178 ⎘
Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof; Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AB compounds with or without impurities, e.g. doping materials; Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy using physical deposition, e.g. vacuum deposition, sputtering Epitaxial deposition of AIII BV compounds
Vapor phase epitaxy method
#2Semiconductor device having a planar III-N semiconductor layer and fabrication method
#3Seed crystal for growth of gallium nitride bulk crystal in supercritical ammonia and fabrication method
#4Seed crystal for growth of gallium nitride bulk crystal in supercritical ammonia and fabrication method
#5Nanowire device having graphene top and bottom electrodes and method of making such a device
#6Regrowth method for fabricating wide-bandgap transistors, and devices made thereby
#7Regrowth method for fabricating wide-bandgap transistors, and devices made thereby