207180 ⎘
Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof; Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AB compounds with or without impurities, e.g. doping materials; Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition Expitaxial deposition of elements of Group IV of the Periodic System, e.g. Si, Ge
EPITAXIAL GROWTH DEVICE
#2METHODS FOR FORMING AN EPITAXIAL WAFER
#3Crucible having an improved crystal growth base for manufacturing silicon carbide single crystal and method of use
#4SiC EPITAXIAL SUBSTRATE MANUFACTURING METHOD AND MANUFACTURING DEVICE THEREFOR
#5Method of manufacturing semiconductor element, semiconductor element, and substrate
#6Source/drain structure for semiconductor device
#7Method for manufacturing silicon carbide epitaxial substrate
#8Diamond semiconductor system and method
#9Method for depositing an epitaxial layer on a front side of a semiconductor wafer and device for carrying out the method
#10Diamond semiconductor system and method
#11Integrated photonics including waveguiding material
#12Transistor structure with multiple halo implants having epitaxial layer over semiconductor-on-insulator substrate
#13Crystal laminate structure
#14Integrated photonics including germanium
#15Silicon carbide epitaxial substrate and method for manufacturing silicon carbide semiconductor device
#16Manufacturing method for a semiconductor device including a polysilicon resistor
#17Integrated photonics including germanium
#18Chlorosilylarylgermanes, method for preparation thereof and use thereof
#19Method for manufacturing silicon carbide epitaxial substrate, method for manufacturing silicon carbide semiconductor device, and apparatus for manufacturing silicon carbide epitaxial substrate
#20Method to reduce variability in contact resistance
#21Substrate processing apparatus
#22Method of doped germanium formation
#23Crystal laminate structure
#24Gas flow control for EPI thickness uniformity improvement
#25SiC epitaxial wafer and method for manufacturing SiC epitaxial wafer
#26Light emitting device, light emitting device package, light unit, and method of manufacturing same
#27Diamond semiconductor system and method
#28Method of fabricating double sided Si(Ge)/Sapphire/III-nitride hybrid structure
#29Method for manufacturing resistive element, method for manufacturing pressure sensor element, pressure sensor element, pressure sensor, altimeter, electronic apparatus, and moving object
#30Integrated photonics including waveguiding material
#31Transistor structure and fabrication methods with an epitaxial layer over multiple halo implants
#32Integrated photonics including germanium
#33Method for forming an electrical contact
#34FinFET structures having silicon germanium and silicon channels
#35Method for selective growth of highly doped group IV—Sn semiconductor materials
#36Diamond Semiconductor System and Method
#37Method to reduce variability in contact resistance
#38Fin-type resistor