207179 ⎘
Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof; Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AB compounds with or without impurities, e.g. doping materials; Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
Sub-classes:METHOD FOR ADJUSTING THERMAL FIELD OF SILICON CARBIDE SINGLE CRYSTAL GROWTH
#2WAFER CARRIER ASSEMBLY WITH PEDESTAL AND COVER RESTRAINT ARRANGEMENTS THAT CONTROL THERMAL GAPS
#3Showerhead and substrate processing apparatus
#4AlN MONOCRYSTAL PLATE
#5Method for setting a nitrogen concentration of a silicon epitaxial film in manufacturing an epitaxial silicon wafer
#6Vapor delivery device, methods of manufacture and methods of use thereof
#7Methods and compositions for RNA-directed target DNA modification and for RNA-directed modulation of transcription
#8Processing apparatus and processing method
#9SEMICONDUCTOR MANUFACTURING APPARATUS AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
#10System for coating a substrate
#11Substrate processing apparatus, method of processing substrate, method of manufacturing semiconductor device and recording medium
#12SUBSTRATE PROCESSING APPARATUS, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND NON-TRANSITORY COMPUTER-READABLE RECORDING MEDIUM
#13Method and apparatus for selective film formation in semiconductor substrate processing
#14SiC EPITAXIAL GROWTH APPARATUS
#15Flow control system, method, and apparatus
#16Semiconductor epitaxial wafer and method of producing semiconductor epitaxial wafer, and method of producing solid-state imaging device
#17Vapor phase epitaxial growth device
#18SiC composite substrate including biaxially oreinted SiC layer and semiconductor device
#19Silicon carbide epitaxial substrate and method of manufacturing silicon carbide semiconductor device
#20Methods and compositions for RNA-directed target DNA modification and for RNA-directed modulation of transcription
#21Method for producing GaN crystal
#22METHOD FOR MANUFACTURING GROUP III NITRIDE SEMICONDUCTOR SUBSTRATE
#23Substrate processing apparatus
#24Flow control system, method, and apparatus
#25Substrate processing apparatus and method of manufacturing semiconductor device
#26Silicon carbide epitaxial substrate having grooves extending along main surface and method of manufacturing silicon carbide semiconductor device
#27Epitaxial silicon carbide single crystal wafer and process for producing the same
#28Vapor delivery device, methods of manufacture and methods of use thereof
#29Vapor phase epitaxial growth device
#30Silicon carbide epitaxial substrate and silicon carbide semiconductor device
#31Valve device, flow control method using the same, and semiconductor manufacturing method
#32Nanorod production method and nanorod produced thereby
#33Nitride crystal substrate, semiconductor laminate, method of manufacturing semiconductor laminate and method of manufacturing semiconductor device
#34SiC chemical vapor deposition apparatus
#35Semiconductor stack
#36SINGLE CRYSTAL SILICON PRODUCTION METHOD, EPITAXIAL SILICON WAFER PRODUCTION METHOD, SINGLE CRYSTAL SILICON, AND EPITAXIAL SILICON WAFER
#37Semiconductor epitaxial wafer and method of producing semiconductor epitaxial wafer, and method of producing solid-state imaging device
#38Source gas supply apparatus, film forming apparatus, and source gas supply method
#39Crystal laminate structure
#40Optical semiconductor element and method of manufacturing the same
#41Methods and compositions for RNA-directed target DNA modification and for RNA-directed modulation of transcription
#42Silicon carbide epitaxial substrate having grooves extending along main surface and method of manufacturing silicon carbide semiconductor device
#43EPITAXIAL SILICON WAFER AND METHOD FOR MANUFACTURING EPITAXIAL SILICON WAFER
#44Method of depositing tungsten
#45Silicon carbide substrate, method for manufacturing silicon carbide substrate, and method for manufacturing silicon carbide semiconductor device
#46Silicon carbide stacked substrate and manufacturing method thereof
#47Substrate processing apparatus
#48Group 13 (III) nitride thick layer formed on an underlying layer having high and low carrier concentration regions with different defect densities
#49Semiconductor stack
#50Semiconductor wafer
#51Apparatus for manufacturing group III nitride single crystal, method for manufacturing group III nitride single crystal using the apparatus, and aluminum nitride single crystal
#52Deposition apparatus and deposition method
#53Nitride semiconductor substrate, manufacturing method therefor, and semiconductor device
#54Silicon carbide epitaxial substrate and method for manufacturing a silicon carbide semiconductor device
#55Flow control system, method, and apparatus
#56Group 13 nitride layer, composite substrate, and functional element
#57Group III nitride stacked body, and semiconductor device having the stacked body
#58Manufacturing method of nitride semiconductor ultraviolet light emitting element, and nitride semiconductor ultraviolet light emitting element
#59Silicon carbide epitaxial substrate and silicon carbide semiconductor device
#60COMPONENT FOR FABRICATING SIC SEMICONDUCTOR, HAVING PLURALITY OF LAYERS HAVING DIFFERENT TRANSMITTANCES, AND METHOD FOR MANUFACTURING SAME
#61Vapor phase growth apparatus, method of manufacturing epitaxial wafer, and attachment for vapor phase growth apparatus
#62Thermoelectric material, thermoelectric element, optical sensor, and method of manufacturing thermoelectric material
#63Semiconductor device and method for manufacturing the same
#64Method of manufacturing epitaxial silicon wafer, epitaxial silicon wafer, and method of manufacturing solid-state image sensing device
#65Epitaxial silicon wafer, and method for manufacturing epitaxial silicon wafer
#66Dielectric gap-fill material deposition
#67Substrate processing apparatus, substrate processing method, and storage medium
#68Semiconductor optical device
#69Nitride semiconductor laminate, method for manufacturing nitride semiconductor laminate, method for manufacturing semiconductor laminate, and method for inspecting semiconductor laminate
#70Silicon carbide epitaxial substrate and silicon carbide semiconductor device
#71Precursor supply system and precursors supply method
#72Reheating collection device for gas phase process
#73Cleaning method of semiconductor manufacturing device
#74Method for producing aluminum nitride single crystal substrate
#75Semiconductor stack
#76Film forming apparatus
#77Vertical-type ultraviolet light-emitting diode
#78Nanorod production method and nanorod produced thereby
#79Epitaxial substrate
#80Silicon carbide epitaxial substrate and silicon carbide semiconductor device
#81Semiconductor substrate made of silicon carbide and method for manufacturing same
#82Single-crystal diamond, method for manufacturing single-crystal diamond, and chemical vapor deposition device used in same
#83Pre-treatment approach to improve continuity of ultra-thin amorphous silicon film on silicon oxide
#84Method for producing GaN crystal
#85Nitride semiconductor light-emitting element
#86Film forming apparatus
#87Wafer supporting mechanism, chemical vapor deposition apparatus, and epitaxial wafer manufacturing method
#88Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium
#89Semiconductor device and method for manufacturing the same
#90Semiconductor light-emitting device and method of manufacturing semiconductor light-emitting device
#91Silicon carbide epitaxial substrate having a silicon carbide layer and method of manufacturing silicon carbide semiconductor device
#92Group 13 (III) nitride thick layer formed on an underlying layer having high and low carrier concentration regions with different defect densities
#93SEMICONDUCTOR MANUFACTURING APPARATUS AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
#94METHOD AND APPARATUS FOR COATING INNER SURFACE
#95Method for manufacturing nitride semiconductor substrate
#96Epitaxial growth method for silicon carbide
#97Epitaxial substrate for semiconductor elements, semiconductor element, and manufacturing method for epitaxial substrates for semiconductor elements
#98Epitaxial substrate for semiconductor elements, semiconductor element, and manufacturing method for epitaxial substrates for semiconductor elements
#99Epitaxial substrate for semiconductor elements, semiconductor element, and manufacturing method for epitaxial substrates for semiconductor elements
#100APPLYING EQUALIZED PLASMA COUPLING DESIGN FOR MURA FREE SUSCEPTOR
#101Semiconductor optical device
#102Film forming apparatus, film forming method and heat insulating member
#103Method for manufacturing group III-V nitride semiconductor epitaxial wafer
#104High-tech temperature control device for semiconductor manufacturing facility
#105Method of fabricating black phosphorus ultrathin film and black phosphorus ultrathin film thereof
#106Epitaxial growth device, production method for epitaxial wafer, and lift pin for epitaxial growth device
#107SUBSTRATE PROCESSING APPARATUS
#108Susceptor and epitaxial growth device
#109Method for manufacturing a graphene thin-film transistor
#110Substrate processing apparatus
#111Substrate processing apparatus
#112Substrate processing apparatus, nozzle base, and manufacturing method for semiconductor device
#113Vaporization supply apparatus
#114Film deposition apparatus and method for cleaning film deposition apparatus
#115Lift pin and method for manufacturing same
#116Composite semiconductor substrate
#117Alumina substrate
#118Thin film transistor and method for manufacturing the same
#119High-frequency wave supplying structure
#120Semiconductor device and production method therefor
#121Method of manufacturing semiconductor device
#122SiC epitaxial wafer and method for manufacturing SiC epitaxial wafer
#123Nitride semiconductor template, manufacturing method thereof, and epitaxial wafer
#124Flow control system, method, and apparatus
#125Vacuum exhaust system and channel-switching valve used in this vacuum exhaust system
#126CRYSTAL PRODUCTION SYSTEMS AND METHODS
#127Epitaxial silicon carbide single crystal wafer and process for producing the same
#128Method of manufacturing an epitaxial wafer comprising measuring a level difference between a front surface of a susceptor and an upper surface of a lift pin and adjusting a ratio of the heat source output
#129Method for manufacturing SiC epitaxial wafer by simultaneously utilizing an N-based gas and a CI-based gas, and SiC epitaxial growth apparatus
#130Substrate processing method
#131Selective deposition with surface treatment
#132Apparatus for manufacturing group III nitride single crystal, method for manufacturing group III nitride single crystal using the apparatus, and aluminum nitride single crystal
#133Film-forming apparatus
#134Plasma processing method and plasma processing apparatus
#135Optical gas concentration measuring method by forming a differential signal using lights with different absorbabilities to a raw material in a gas flow path using a time-sharing method
#136Substrate processing apparatus
#137Alumina substrate
#138Dry pump and exhaust gas treatment method
#139Vacuum evacuation system
#140Susceptor and method for manufacturing same
#141Method for producing epitaxial silicon carbide wafers
#142Semiconductor substrate, epitaxial wafer, and method for manufacturing epitaxial wafer
#143Plasma processing method and plasma processing apparatus
#144Semiconductor device manufacturing method
#145Template for epitaxial growth, method for producing the same, and nitride semiconductor device
#146Batch-type remote plasma processing apparatus
#147Mechanisms for supplying process gas into wafer process apparatus
#148Microelectronic memory devices having flat stopper layers
#149Substrate processing apparatus, method for manufacturing substrate, and method for manufacturing semiconductor device
#150Semiconductor device manufacturing method and substrate manufacturing method of forming silicon carbide films on the substrate
#151Batch-type remote plasma processing apparatus
#152Methods of fabricating microelectronic memory devices having flat stopper layers
#153SEMICONDUCTOR DEVICE MANUFACTURING METHOD, SUBSTRATE PROCESSING APPARATUS, SUBSTRATE MANUFACTURING METHOD
#154Method of fabricating free-form, high-aspect ratio components for high-current, high-speed microelectronics
#155Batch-type remote plasma processing apparatus
#156Batch-type remote plasma processing apparatus
#157Batch-Type Remote Plasma Processing Apparatus
#158Batch-type remote plasma processing apparatus
#159Batch-Type Remote Plasma Processing Apparatus
#160Batch-type remote plasma processing apparatus