ClassID:

207181

H01L21/2056 - CPC Classification

Classification description:

Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof; Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AB compounds with or without impurities, e.g. doping materials; Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition Epitaxial deposition of AB compounds

Recent Application in this class:
#1
20210344173
2021-11-04

Fabrication of semiconductor structures

#2
20210328099
2021-10-21

Method of manufacturing nitride semiconductor light-emitting element

#3
20200335342
2020-10-22

METHODS FOR DEPOSITING THIN FILMS COMPRISING INDIUM NITRIDE BY ATOMIC LAYER DEPOSITION

#4
20200258741
2020-08-13

Multi-deposition process for high quality gallium nitride device manufacturing

#5
20190109209
2019-04-11

Method for manufacturing electronic component for heterojunction provided with buried barrier layer

#6
20190103273
2019-04-04

Method for Producing Group III Nitride Laminate

#7
20180226536
2018-08-09

Method of manufacturing nitride semiconductor light-emitting element

#8
20180182621
2018-06-28

Method of manufacturing switching element having gallium nitride substrate

#9
20180005827
2018-01-04

Multi-deposition process for high quality gallium nitride device manufacturing

#10
20170263769
2017-09-14

III-Nitride transistor with enhanced doping in base layer

#11
20170069491
2017-03-09

Stress assisted wet and dry epitaxial lift off

#12
20170004962
2017-01-05

Method of fabricating double sided Si(Ge)/Sapphire/III-nitride hybrid structure

#13
20160268130
2016-09-15

Manufacturing method of semiconductor device that includes forming plural nitride semiconductor layers of identical material

#14
20160133783
2016-05-12

Method of producing group III nitride semiconductor light-emitting device

#15
20160064555
2016-03-03

III-nitride transistor with enhanced doping in base layer

#16
20160020361
2016-01-21

Group III nitride semiconductor light-emitting device and production method therefor

#17
20160009556
2016-01-14

Systems and methods for growing a non-phase separated group-III nitride semiconductor alloy

#18
20150076450
2015-03-19

Nanowire device having graphene top and bottom electrodes and method of making such a device

#19
20140131720
2014-05-15

Composite layer stacking for enhancement mode transistor

#20
20130244408
2013-09-19

Methods for growing a non-phase separated group-III nitride semiconductor alloy

#21
20130153921
2013-06-20

Nitride semiconductor device using selective growth and manufacturing method thereof

#22
20130118404
2013-05-16

Methods and Systems for Forming Thin Films

#23
20130109160
2013-05-02

Methods for depositing thin films comprising indium nitride by atomic layer deposition

#24
20130012003
2013-01-10

Methods for depositing thin films comprising gallium nitride by atomic layer deposition

#25
20120208357
2012-08-16

Methods and systems for forming thin films

#26
20120208352
2012-08-16

Methods and systems for forming thin films

#27
16385193
2020-02-04

Regrowth method for fabricating wide-bandgap transistors, and devices made thereby