207200 ⎘
Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof; Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AB compounds with or without impurities, e.g. doping materials; Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body; Alloying of electrode materials with AB compounds
Gallium nitride-based compound semiconductor device
#2Electrode with alloy interface
#3METHOD OF FORMING OHMIC CONTACT FOR GALLIUM NITRIDE-BASED COMPOUND SEMICONDUCTOR DEVICE AND GALLIUM NITRIDE-BASED COMPOUND SEMICONDUCTOR DEVICE
#4Lateral current injection electro-optical device with well-separated doped III-V layers structured as photonic crystals
#5SEMICONDUCTOR DEVICE
#6Vertical cavity surface emitting laser, method for fabricating vertical cavity surface emitting laser
#7Compound semiconductor device with quantum well structure, power supply device, and high-frequency amplifier
#8Nitride semiconductor device and process of forming the same
#9Ni:NiGe:Ge selective etch formulations and method of using same
#10Semiconductor device
#11Doped zinc oxide and n-doping to reduce junction leakage
#12Self-aligned III-V MOSFET diffusion regions and silicide-like alloy contact
#13SELF-ALIGNED III-V MOSFET DIFFUSION REGIONS AND SILICIDE-LIKE ALLOY CONTACT