207205 ⎘
Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof; Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AB compounds with or without impurities, e.g. doping materials; Bombardment with radiation with high-energy radiation
Wafer and method for producing a wafer
#302Wafer and a method for manufacturing a wafer
#303INCREASING AN ELECTRICAL RESISTANCE OF A RESISTOR BY NITRIDIZATION
#304Methods of manufacturing semiconductor devices
#305Power semiconductor device with soft switching characteristic and manufacturing method for same
#306INCREASING AN ELECTRICAL RESISTANCE OF A RESISTOR BY NITRIDIZATION
#307Method for fabricating a semiconductor element, and semiconductor element
#308Diode
#309Method for the production of a buried stop zone in a semiconductor component and semiconductor component comprising a buried stop zone
#310Manufacturing method of semiconductor device
#311Semiconductor component and method for producing the same
#312Method and structure for isolating substrate noise
#313Integrated circuit having doped semiconductor body and method
#314Increasing an electrical resistance of a resistor by oxidation
#315SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
#316Method for producing an integrated circuit including a semiconductor
#317Semiconductor component comprising a temporary field stopping area, and method for the production thereof
#318Soft switching semiconductor component with high robustness and low switching losses
#319Increasing an electrical resistance of a resistor by nitridization
#320Semiconductor component and method
#321Semiconductor device with semi-insulating substrate portions and method for forming the same
#322Method of manufacturing semiconductor device and semiconductor device formed by the method
#323Diode
#324Method for producing a stop zone in a semiconductor body and semiconductor component having a stop zone
#325Method of bonding two wafers of semiconductor materials
#326Method for producing a buried semiconductor layer
#327Silicon-on-nothing metal oxide semiconductor field effect transistor and method of manufacturing the same
#328Method for fabricating a field stop zone
#329METHOD OF FORMING A SEMI-INSULATING REGION
#330Boron-doped diamond semiconductor
#331Semiconductor device and a method for manufacturing therefor
#332Power semiconductor rectifier having broad buffer structure and method of manufacturing thereof
#333Plasma implantation using halogenated dopant species to limit deposition of surface layers
#334Semiconductor component and method for producing the same
#335Semiconductor device and fabrication method suitable therefor
#336Method for fabricating a doped zone in a semiconductor body
#337Isolating substrate noise by forming semi-insulating regions
#338Method for producing a buried N-doped semiconductor zone in a semiconductor body and semiconductor component
#339Method for producing an n-doped field stop zone in a semiconductor body and semiconductor component having a field stop zone
#340Method for producing semiconductor elements
#341Method for production of a buried stop zone in a semiconductor component and semiconductor component comprising a buried stop zone
#342Reverse conducting semiconductor device and a fabrication method thereof
#343High-voltage diode with optimized turn-off method and corresponding optimization method
#344Anti-scattering attenuator structure for high energy particle radiation into integrated circuits
#345Metallization and its use in, in particular, an IGBT or a diode
#346Method for production of deep p regions in silicon, and semiconductor components produced using the method
#347Semiconductor diode and production method suitable therefor
#348Secure permanent integrated circuit personalization
#349Secure permanent integrated circuit personalization
#350Plasma poisoning to enable selective deposition
#351Deep trench with self-aligned sinker
#352Integrated inductor
#353Selective dielectric spacer deposition for exposing sidewalls of a finFET