207470 ⎘
Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof; Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof; Manufacture of specific parts of devices defined in group; Making of isolation regions between components; Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using silicon implanted buried insulating layers, e.g. oxide layers, i.e. SIMOX techniques
Method for manufacturing isolation structures in a semiconductor device
#302Process for producing silicon on insulator structure having intrinsic gettering by ion implantation
#303High-resistance silicon wafer and process for producing the same
#304SOI structure having a SiGe layer interposed between the silicon and the insulator
#305Method for manufacturing silicon-on-insulator wafer
#306Method for manufacturing silicon-on-insulator wafer
#307Method for reducing a short channel effect for NMOS devices in SOI circuits
#308Semiconductor device and method of manufacturing the same
#309High electrical quality buried oxide in simox
#310SOI substrate
#311Formation of silicon-germanium-on-insulator (SGOI) by an integral high temperature SIMOX-Ge interdiffusion anneal
#312Semiconductor substrate and method for production thereof
#313Body contact formation in partially depleted silicon on insulator device
#314Use of hydrogen implantation to improve material properties of silicon-germanium-on-insulator material made by thermal diffusion
#315Formation of silicon-germanium-on-insulator (SGOI) by an integral high temperature SIMOX-Ge interdiffusion anneal
#316Patterned SOI by oxygen implantation and annealing
#317Thin buried oxides by low-dose oxygen implantation into modified silicon
#318SOI wafers with 30-100 Å buried oxide (BOX) created by wafer bonding using 30-100 Å thin oxide as bonding layer
#319Horizontal memory devices with vertical gates
#320Horizontal memory devices with vertical gates
#321Localized strained semiconductor on insulator
#322Self-aligned MOSFET having an oxide region below the channel
#323Method of fabricating a semiconductor device
#324Control of buried oxide in SIMOX
#325RF switch
#326On-chip DC-DC power converters with fully integrated GaN power switches, silicon CMOS transistors and magnetic inductors
#327Method and structure to make fins with different fin heights and no topography