H01L21/76245 - CPC Classification Index

ClassID:

207471 ⎘

H01L21/76245 - CPC Classification

Classification description:

Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof; Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof; Manufacture of specific parts of devices defined in group; Making of isolation regions between components; Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using full isolation by porous oxide silicon, i.e. FIPOS techniques

Recent Application in this class:

20230163021

RF devices with enhanced performance and methods of forming the same utilizing localized SOI formation

20230088569

RADIO-FREQUENCY INTEGRATED CIRCUITS (RFICS) INCLUDING A POROSIFIED SEMICONDUCTOR ISOLATION REGION TO REDUCE NOISE INTERFERENCE AND RELATED FABRICATION METHODS

20220336265

METHOD OF FORMING SEMICONDUCTOR-ON-INSULATOR (SOI) SUBSTRATE

20210098281

Method of forming semiconductor-on-insulator (SOI) substrate

20190326159

RF devices with enhanced performance and methods of forming the same utilizing localized SOI formation

20190074212

Semiconductor device and semiconductor wafer including a porous layer and method of manufacturing

20180082910

Low-cost SOI FinFET technology

20160276226

Low-cost SOI FinFET technology

20100221867

LOW COST SOI SUBSTRATES FOR MONOLITHIC SOLAR CELLS

20100006985

Formation of SOI by oxidation of silicon with engineered porosity gradient

20090117720

Strained semiconductor-on-insulator by Si:C combined with porous process

20090039428

FABRICATING METHOD FOR SILICON ON INSULATOR AND STRUCTURE THEREOF

20080211054

Methods for forming germanium-on-insulator semiconductor structures using a porous layer and semiconductor structures formed by these methods

20080197447

Method for manufacturing a structure of semiconductor-on-insulator type

20070093036

Methods for forming germanium-on-insulator semiconductor structures using a porous layer and semiconductor structures formed by these methods

20060289962

AN ISOLATION REGION FOR USE IN A SEMICONDUCTOR DEVICE

20050067294

SOI by oxidation of porous silicon

20050056352

Formation of a silicon germanium-on-insulator structure by oxidation of a buried porous silicon layer

14712462

Method and structure to make fins with different fin heights and no topography