207475 ⎘
Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof; Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof; Manufacture of specific parts of devices defined in group; Making of isolation regions between components; Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology SOI together with lateral isolation, e.g. using local oxidation of silicon, or dielectric or polycristalline material refilled trench or air gap isolation regions, e.g. completely isolated semiconductor islands
Semiconductor device and method for manufacture
#302Grounding front-end-of-line structures on a SOI substrate
#303Multi-orientation semiconductor-on-insulator (SOI) substrate, and method of fabricating same
#304Method for manufacturing semiconductor substrate
#305Method to selectively form regions having differing properties and structure
#306Method of manufacturing semiconductor substrate and semiconductor device
#307Semiconductor substrate manufacturing method and semiconductor device
#308Method for manufacturing semiconductor substrate and method for manufacturing semiconductor device
#309Trench insulation in substrate disks comprising logic semiconductors and power semiconductors
#310Method of forming a field effect transistor
#311Semiconductor devices and manufacturing methods of the same
#312Method in the fabrication of a monolithically integrated vertical device on an SOI substrate
#313Process for manufacturing a high-quality SOI wafer
#314Semiconductor device having a trench isolation and method of fabricating the same
#315STORAGE DEVICES FORMED ON PARTIALLY ISOLATED SEMICONDUCTOR SUBSTRATE ISLANDS
#316Semiconductor device having an active area partially isolated by a lateral cavity
#317Structure and method for III-nitride monolithic power IC
#318Semiconductor device having first and second insulation separation regions
#319Semiconductor device and method of manufacturing same
#320Semiconductor device using partial SOI substrate and manufacturing method thereof
#321Strained Si/SiGe/SOI islands and processes of making same
#322Methods of forming field effect transistors and methods of forming field effect transistor gates and gate lines
#323Semiconductor device
#324Method of manufacturing semiconductor device having trench isolation
#325Semiconductor device having epitaxial layer
#326Method for realizing microchannels in an integrated structure
#327Methods for forming structures including strained-semiconductor-on-insulator devices
#328Methods for forming double gate strained-semiconductor-on-insulator device structures
#329Double gate strained-semiconductor-on-insulator device structures
#330Methods for forming strained-semiconductor-on-insulator bipolar device structures
#331Integrated electronic circuit comprising superposed components
#332Strained-semiconductor-on-insulator bipolar device structures
#333Semiconductor device and method of manufacturing the same
#334Method of producing mixed substrates and structure thus obtained
#335Multiple layer structure for substrate noise isolation
#336Method for manufacturing semiconductor substrate and semiconductor substrate
#337Dielectric isolation type semiconductor device and method for manufacturing the same
#338Trench isolation structure, semiconductor assembly comprising such a trench isolation, and method for forming such a trench isolation
#339Methods of forming integrated circuits structures including epitaxial silicon layers in active regions
#340Semiconductor device and manufacturing method thereof
#341Semiconductor device and method of manufacturing same
#342Transmission device for transmitting a signal through a transmission line between circuits blocks having different power supply systems
#343Semiconductor device and process for manufacturing the same
#344Control of strain in device layers by prevention of relaxation
#345Control of strain in device layers by selective relaxation
#346Semiconductor chip and method for manufacturing the same and semiconductor device
#347Process for making a silicon-on-insulator ledge and structures achieved thereby
#348Semiconductor device, method of manufacturing the same, and method of evaluating semiconductor device
#349Strained-semiconductor-on-insulator finFET device structures
#350TFT, method of manufacturing the TFT, flat panel display having the TFT, and method of manufacturing the flat panel display
#351Semiconductor device and method of manufacturing the same
#352Strained channel on insulator device
#353CMOS fabricated on different crystallographic orientation substrates
#354Strained-semiconductor-on-insulator device structures with elevated source/drain regions
#355Methods for forming strained-semiconductor-on-insulator device structures by use of cleave planes
#356Semiconductor device and method of manufacturing the same
#357Strained germanium-on-insulator device structures
#358Method of manufacturing semiconductor device
#359Methods for forming strained-semiconductor-on-insulator device structures by mechanically inducing strain
#360Strained-semiconductor-on-insulator device structures
#361Method of manufacturing semiconductor device
#362Method of making an integrated circuit
#363Method of producing active semiconductor layers of different thicknesses in an SOI wafer
#364Lithography device for semiconductor circuit pattern generation
#365Methods of forming strained-semiconductor-on-insulator device structures
#366Semiconductor device formed in semiconductor layer arranged on substrate with one of insulating film and cavity interposed between the substrate and the semiconductor layer
#367Method of fabricating a non-floating body device with enhanced performance
#368Method of preventing semiconductor layers from bending and semiconductor device formed thereby
#369Methods for maskless lithography
#370Dielectric isolation type semiconductor device and method for manufacturing the same
#371Method of forming a cavity and SOI in a semiconductor substrate
#372Structure and method for III-nitride monolithic power IC
#373Semiconductor device having patterned SOI structure and method for fabricating the same
#374Method of forming a field effect transistor
#375RFID tag with tunable antenna and associated reader
#376SOI chip with mesa isolation and recess resistant regions
#377Semiconductor device having a trench isolation and method of fabricating the same
#378Methods of forming field effect transistor gate lines
#379Method of forming field effect transistors
#380Method of forming a field effect transistor
#381Semiconductor device using partial SOI substrate and manufacturing method thereof
#382Strained Si/SiGe/SOI islands and processes of making same
#383SOI device with reduced junction capacitance
#384Flexible and elastic dielectric integrated circuit
#385Membrane 3D IC fabrication
#386Shallow trench isolation (STI) region with high-K liner and method of formation
#387Method for manufacturing SOI LOCOS MOSFET with metal oxide film or impurity-implanted field oxide
#388Stress-controlled dielectric integrated circuit
#389Ultra-thin silicon-on-insulator and strained-silicon-direct-on-insulator with hybrid crystal orientations
#390Semiconductor device having epitaxial layer
#391Process for producing an integrated electronic circuit comprising superposed components and integrated electronic circuit thus obtained
#392Method of manufacturing semiconductor device having trench isolation
#393Strained Si/SiGe/SOI islands and processes of making same
#394Method and apparatus for providing an integrated active region on silicon-on-insulator devices
#395Semiconductor chip having multiple functional blocks integrated in a single chip and method for fabricating the same
#396Method of manufacturing semiconductor device having thin film SOI structure
#397Method of manufacturing semiconductor device and semiconductor device
#398Semiconductor devices
#399Silicon island structure and method of fabricating same
#400Method for forming a semiconductor-on-insulator (SOI) substrate
#401One-time programmable vertical field-effect transistor
#402Multiple Fin heights with dielectric isolation
#403Ultra-scale gate cut pillar with overlay immunity and method for producing the same
#404Method to fabricate both FD-SOI and PD-SOI devices within a single integrated circuit
#405Methods for forming isolation blocks of semiconductor devices, semiconductor devices and methods for manufacturing the same
#406Semiconductor device having field plate disposed on isolation feature and method for forming the same
#407Method and structure for forming dielectric isolated FinFET with improved source/drain epitaxy
#408Method of making a semiconductor device having a semiconductor material on a relaxed semiconductor including replacing a strained, selective etchable material, with a low density dielectric in a cavity
#409FETs and methods of forming FETs