209307 ⎘
Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by; Applying interconnections to be used for carrying current between separate components within a device; Formation and after-treatment of dielectrics the dielectric comprising air gaps the air gaps being formed by pores in the dielectric
MEMORY STRUCTURE INCLUDING LOW DIELECTRIC CONSTANT CAPPING LAYER
#2REMOTE PLASMA BASED DEPOSITION OF SILICON CARBIDE FILMS USING SILICON-CONTAINING AND CARBON-CONTAINING PRECURSORS
#3SEMICONDUCTOR DEVICE INCLUDING A POROUS DIELECTRIC LAYER, AND METHOD OF FORMING THE SEMICONDUCTOR DEVICE
#4ELECTRONIC DEVICES COMPRISING SILICON CARBIDE MATERIALS
#5Conformal deposition of silicon carbide films
#6MEMORY STRUCTURE
#7SEMICONDUCTOR DEVICE AND METHOD
#8Semiconductor device including a porous dielectric layer, and method of forming the semiconductor device
#9Porogen bonded gap filling material in semiconductor manufacturing
#10SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
#11System and method of forming a porous low-k structure
#12CONFORMAL DEPOSITION OF SILICON CARBIDE FILMS USING HETEROGENEOUS PRECURSOR INTERACTION
#13THREE DIMENSIONAL (3D) MEMORY DEVICE AND FABRICATION METHOD USING SELF-ALIGNED MULTIPLE PATTERNING AND AIRGAPS
#14Methods of forming electronic devices comprising silicon carbide materials
#15Conformal deposition of silicon carbide films
#16Method for fabricating semiconductor device with porous decoupling features
#17Etch damage and ESL free dual damascene metal interconnect
#18Semiconductor device with porous decoupling feature
#19Semiconductor device including a porous dielectric layer, and method of forming the semiconductor device
#20Semiconductor device
#21Semiconductor device and method
#22Electronic devices comprising silicon carbide materials
#23Airgap vertical transistor without structural collapse
#24Porogen bonded gap filling material in semiconductor manufacturing
#25Interconnect structure and method
#26Airgap vertical transistor without structural collapse
#27Semiconductor device including a porous dielectric layer, and method of forming the semiconductor device
#28System and method of forming a porous low-k structure
#29Semiconductor device
#30Semiconductor device and method to fabricate the semiconductor device
#31Semiconductor structure and manufacturing method thereof
#32Pitch quartered three-dimensional air gaps
#33Semiconductor device and method
#34Semiconductor device including a porous dielectric layer, and method of forming the semiconductor device
#35Etch damage and ESL free dual damascene metal interconnect
#36Conformal deposition of silicon carbide films
#37Interconnect structure and method
#38BACK-END-OF-LINE STRUCTURES WITH AIR GAPS
#39Semiconductor structure and manufacturing method thereof
#40Semiconductor device including a porous dielectric layer, and method of forming the semiconductor device
#41REMOTE PLASMA BASED DEPOSITION OF SILICON CARBIDE FILMS USING SILICON-CONTAINING AND CARBON-CONTAINING PRECURSORS
#42System and method of forming a porous low-K structure
#43Method of Surface Localized Pore Sealing of Porous Dielectric Material
#44Porogen bonded gap filling material in semiconductor manufacturing
#45Semiconductor device and method
#46Doric pillar supported maskless airgap structure for capacitance benefit with unlanded via solution
#47Etch damage and ESL free dual damascene metal interconnect
#48Nanotube structure based metal damascene process
#49Display substrate including a nano-imprint pattern and method of manufacturing the same
#50Articles including ultra low dielectric layers
#51Remote plasma based deposition of oxygen doped silicon carbide films
#52Low-K dielectric layer and porogen
#53Method of manufacturing an ultra low dielectric layer
#54Semiconductor devices and methods of fabricating the same
#55Semiconductor device having a porous low-k structure
#56Porogen bonded gap filling material in semiconductor manufacturing
#57Techniques for forming interconnects in porous dielectric materials
#58Etch damage and ESL free dual damascene metal interconnect
#59Semiconductor isolation structure with air gaps in deep trenches
#60Methods of manufacturing semiconductor devices including conductive structures
#61Interconnect structure
#62Nanotube structure based metal damascene process
#63Semiconductor devices and methods of fabricating the same
#64Nanotube structure based metal damascene process
#65Conformal deposition of silicon carbide films
#66Air gap forming techniques based on anodic alumina for interconnect structures
#67Low-K dielectric layer and porogen
#68Method for removing back-filled pore-filling agent from a cured porous dielectric
#69Air gap forming techniques based on anodic alumina for interconnect structures
#70FinFET with isolation
#71Methods for forming an interconnect pattern on a substrate
#72Air gap formation by damascene process
#73Apparatus and methods for low k dielectric layers
#74Methods of forming semiconductor devices including low-k dielectric layer
#75Adhesion layer to minimize dielectric constant increase with good adhesion strength in a PECVD process
#76Interconnection structures and fabrication method thereof
#77Interconnect structure and fabrication method
#78Interconnect structure and fabrication method
#79Etch damage and ESL free dual damascene metal interconnect
#80Method to reduce dielectric constant of a porous low-k film
#81Semiconductor device and method of manufacturing the same
#82Etch damage and ESL free dual damascene metal interconnect
#83Remote plasma based deposition of SiOC class of films
#84Semiconductor isolation structure with air gaps in deep trenches
#85Method for manufacturing a porous insulation film and a method for manufacturing a semiconductor device comprising a porous insulation film
#86Direct bonding process using a compressible porous layer
#87DIELECTRIC MATERIAL WITH HIGH MECHANICAL STRENGTH
#88METHODS FOR INTEGRATION OF METAL/DIELECTRIC INTERCONNECTS
#89Multi component dielectric layer
#90Apparatus and methods for low K dielectric layers
#91Reduction of pore fill material dewetting
#92Homogeneous modification of porous films
#93Low-K dielectric layer and porogen
#94MICROELECTRONIC DEVICES INCLUDING THROUGH SILICON VIA STRUCTURES HAVING POROUS LAYERS
#95Reduction of pore fill material dewetting
#96Overburden removal for pore fill integration approach
#97ULTRA LOW DIELECTRIC CONSTANT MATERIAL WITH ENHANCED MECHANICAL PROPERTIES
#98Homogeneous porous low dielectric constant materials
#99Method for forming a dual damascene interconnect structure
#100Semiconductor device having inter-level dielectric layer with hole-sealing and method for manufacturing the same
#101Dielectric protection layer as a chemical-mechanical polishing stop layer
#102Method of manufacturing a semiconductor device having a porous, low-k dielectric layer
#103IN-SITU LOW-K CAPPING TO IMPROVE INTEGRATION DAMAGE RESISTANCE
#104Method of manufacturing semiconductor device, apparatus for manufacturing same, and storage medium
#105Method of forming hardened porous dielectric layer and method of fabricating semiconductor device having hardened porous dielectric layer
#106Semiconductor device having insulating film with surface modification layer and method for manufacturing the same
#107Air gap formation
#108Fabrication of porogen residues free low-k materials with improved mechanical and chemical resistance
#109Multi component dielectric layer
#110Semiconductor device and method of manufacturing semiconductor device
#111Wiring structure, semiconductor device and manufacturing method thereof
#112Method for producing low-film, semiconductor device, and method for manufacturing the same
#113Semiconductor device
#114Semiconductor device and method for fabricating the same
#115Method of forming nanoscale three-dimensional patterns in a porous material
#116APPARATUS FOR MANUFACTURING SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE USING THE SAME
#117Polyhedral oligomeric silsesquioxane based imprint materials and imprint process using polyhedral oligomeric silsesquioxane based imprint materials
#118Low-K dielectric functional imprinting materials
#119ULTRA LOW DIELECTRIC CONSTANT MATERIAL WITH ENHANCED MECHANICAL PROPERTIES
#120SEMICONDUCTOR DEVICE AND FABRICATION METHOD FOR THE SAME
#121Method for producing semiconductor device and semiconductor device
#122Homogeneous porous low dielectric constant materials
#123Semiconductor device and method for fabricating the same
#124Poly-oxycarbosilane compositions for use in imprint lithography
#125METHOD OF PRODUCING SILYLATED POROUS INSULATING FILM, METHOD OF PRODUCING SEMICONDUCTOR DEVICE, AND SILYLATED MATERIAL
#126Semiconductor device and method for manufacturing the same
#127Method for manufacturing semiconductor device having porous low dielectric constant layer formed for insulation between metal lines
#128FABRICATION OF POROGEN RESIDUES FREE AND MECHANICALLY ROBUST LOW-K MATERIALS
#129Process for improving the reliability of interconnect structures and resulting structure
#130Low-K interlevel dielectric materials and method of forming low-K interlevel dielectric layers and structures
#131SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
#132Method for producing low-k l film, semiconductor device, and method for manufacturing the same
#133Method for forming porous insulating film and semiconductor device
#134Manufacturing method of semiconductor device and semiconductor device produced therewith
#135Dielectric separator layer
#136Air gap integration scheme
#137Memory cells including nanoporous layers containing conductive material
#138METHOD FOR FABRICATING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE
#139Semiconductor device having insulating film with surface modification layer and method for manufacturing the same
#140STRUCTURE AND METHOD FOR SiCOH INTERFACES WITH INCREASED MECHANICAL STRENGTH
#141METHOD FOR FORMING A POROUS MATERIAL
#142Semiconductor device having multiple wiring layers and method of producing the same
#143Semiconductor device having multiple wiring layers and method of producing the same
#144Semiconductor devices including porous insulators
#145Method of forming a porous insulation film
#146Method for fabricating a semiconductor device
#147Process for fabricating amorphous hydrogenated silicon carbide films provided with through-pores and films thus obtained
#148METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
#149Semiconductor device and method of manufacturing the same
#150Film forming method for dielectric film
#151INTERCONNECT STRUCTURE
#152METHOD OF FABRICATING SEMICONDCUTOR DEVICE
#153METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE
#154Wiring structure, semiconductor device and manufacturing method thereof
#155Method for making semiconductor structures implementing sacrificial material
#156METHODS OF PATTERNING SELF-ASSEMBLY NANO-STRUCTURE AND FORMING POROUS DIELECTRIC
#157Method for manufacturing semiconductor device having porous low dielectric constant layer formed for insulation between metal lines
#158SEMICONDUCTOR INTERLAYER-INSULATING FILM FORMING COMPOSITION, PREPARATION METHOD THEREOF, FILM FORMING METHOD, AND SEMICONDUCTOR DEVICE
#159Method and structure for low-k interlayer dielectric layer
#160SiCOH DIELECTRIC
#161Method for fabrication of semiconductor device
#162METHOD OF FABRICATING A SEMICONDUCTOR DEVICE WITH A POROUS DIELECTRIC FILM
#163Structure and method for porous SiCOH dielectric layers and adhesion promoting or etch stop layers having increased interfacial and mechanical strength
#164Formation of dielectric film by alternating between deposition and modification
#165Precursors for porous low-dielectric constant materials for use in electronic devices
#166Air gap integration scheme
#167Semiconductor wafer with low-K dielectric layer and process for fabrication thereof
#168Low-K interlevel dielectric materials and method of forming low-K interlevel dielectric layers and structures
#169Polyhedral oligomeric silsesquioxane based imprint materials and imprint process using polyhedral oligomeric silsesquioxane based imprint materials
#170Semiconductor processing system with ultra low-K dielectric
#171Porous and dense hybrid interconnect structure and method of manufacture
#172Manufacturing method of semiconductor device and semiconductor device produced therewith
#173METHOD FOR FORMING AN ULTRA LOW DIELECTRIC FILM BY FORMING AN ORGANOSILICON MATRIX AND LARGE POROGENS AS A TEMPLATE FOR INCREASED POROSITY
#174METHOD FOR FORMING AN ULTRA LOW DIELECTRIC FILM BY FORMING AN ORGANOSILICON MATRIX AND LARGE POROGENS AS A TEMPLATE FOR INCREASED POROSITY
#175MULTI-STAGE CURING OF LOW K NANO-POROUS FILMS
#176SEMICONDUCTOR DEVICE INCLUDING A POROUS LOW-K MATERIAL LAYER STACK WITH REDUCED UV SENSITIVITY
#177Interlayer dielectric film
#178Patternable low dielectric constant materials and their use in ULSI interconnection
#179Semiconductor device and method for manufacturing semiconductor device
#180Method of step-and-flash imprint lithography
#181Materials and methods of forming controlled void
#182Process for improving the reliability of interconnect structures and resulting structure
#183Bond termination of pores in a porous diamond dielectric material
#184Method of forming a low-k dielectric layer with improved damage resistance and chemical integrity
#185Imprint process using polyhedral oligomeric silsesquioxane based imprint materials
#186Manufacturing method of semiconductor device and semiconductor device produced therewith
#187Dielectric material having carborane derivatives
#188Material for forming insulating film with low dielectric constant, low dielectric insulating film, method for forming low dielectric insulating film and semiconductor device
#189Porous silicon dielectric
#190SiCOH dielectric
#191UV curing of low-k porous dielectrics
#192Advanced low dielectric constant organosilicon plasma chemical vapor deposition films
#193Methods of forming low-k dielectric layers containing carbon nanostructures
#194Method of fabricating interconnect structure
#195Semiconductor device having multiple wiring layers and method of producing the same
#196Interconnect structure and fabricating method thereof
#197INTERCONNECT STRUCTURE
#198Method of manufacturing an insulating layer and method of manufacturing a semiconductor device using the insulating layer
#199ION IMPLANTED INSULATOR MATERIAL WITH REDUCED DIELECTRIC CONSTANT
#200Semiconductor device having multilayer wiring lines and manufacturing method thereof
#201Method of forming low-K interlevel dielectric layers and structures
#202Techniques to create low K ILD forming voids between metal lines
#203Formation technology for nanoparticle films having low dielectric constant
#204Electronic apparatus having polynorbornene foam insulation
#205Method for depositing porous films
#206Material for forming insulating film with low dielectric constant, low dielectric insulating film, method for forming low dielectric insulating film and semiconductor device
#207Semiconductor device, and method for manufacturing the same
#208Advanced low dielectric constant organosilicon plasma chemical vapor deposition films
#209Method for defining a feature on a substrate
#210Dielectric material
#211Formation of low K material utilizing process having readily cleaned by-products
#212Forming a porous dielectric layer and structures formed thereby
#213Forming a porous dielectric layer and structures formed thereby
#214Post-ESL porogen burn-out for copper ELK integration
#215Semiconductor device fabrication method
#216Semiconductor device fabrication method
#217Back end of line integration scheme
#218Manufacturing method of insulating film and semiconductor device
#219Using zeolites to improve the mechanical strength of low-k interlayer dielectrics
#220Patternable low dielectric constant materials and their use in ULSI interconnection
#221Porous organosilicates with improved mechanical properties
#222Air gaps between conductive lines for reduced RC delay of integrated circuits
#223Low-k dielectric functional imprinting materials
#224Low-k dielectric layer based upon carbon nanostructures
#225Dielectric material having carborane derivatives
#226Composition and method
#227Semiconductor structure implementing sacrificial material and methods for making and implementing the same
#228Method for depositing porous films
#229Ultraviolet assisted porogen removal and/or curing processes for forming porous low k dielectrics
#230Porous ceramic materials as low-k films in semiconductor devices
#231Method and structure for low k interlayer dielectric layer
#232Material for forming insulating film with low dielectric constant, low dielectric insulating film, method for forming low dielectric insulating film and semiconductor device
#233Diamond-like carbon films with low dielectric constant and high mechanical strength
#234Layered components, materials, methods of production and uses thereof
#235Techniques promoting adhesion of porous low K film to underlying barrier layer
#236Multi-stage curing of low K nano-porous films
#237Method for forming an ultra low dielectric film by forming an organosilicon matrix and large porogens as a template for increased porosity
#238Interconnects with a dielectric sealant layer
#239Method of producing a layered arrangement and layered arrangement
#240Semiconductor structure implementing low-K dielectric materials and supporting stubs
#241Method for manufacturing semiconductor device
#242Methods and structures for metal interconnections in integrated circuits
#243Method for forming inorganic porus film
#244Formation of interconnect structures by removing sacrificial material with supercritical carbon dioxide
#245Interlayer dielectric film, and method for forming the same and interconnection
#246Porous silica dielectric having improved etch selectivity towards inorganic anti-reflective coating materials for integrated circuit applications, and methods of manufacture
#247Semiconductor device having conductive interconnections and porous and nonporous insulating portions
#248Method for forming an opening for an interconnect structure in a dielectric layer having a photosensitive material
#249Semiconductor constructions
#250Semiconductor device and its manufacturing method
#251Method of forming a porous material layer in a semiconductor device
#252Porous materials
#253Zeolite—sol gel nano-composite low k dielectric
#254Method for manufacturing semiconductor device
#255Insulating layer having graded densification
#256Semiconductor devices and other electronic components including porous insulators created from “void” creating materials
#257Semiconductor devices including porous insulators
#258Insulative materials including voids and precursors thereof
#259Methods for forming porous insulator structures on semiconductor devices
#260Polynorbornene foam insulation for integrated circuits
#261Techniques to create low K ILD for beol
#262Techniques to create low K ILD for BEOL
#263Method for forming flowable dielectric layer in semiconductor device
#264Production method for semiconductor device
#265TSV structure having insulating layers with embedded voids