208009 ⎘
Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI
Backside contact to a final substrate
#1502Ion sensor based on differential measurement, and production method
#1503Semiconductor switch
#1504Structure and method to prevent EPI short between trenches in FinFET eDRAM
#1505Structure and method for adjusting threshold voltage of the array of transistors
#1506Suppression of back-gate transistors in RF CMOS switches built on an SOI substrate
#1507FDSOI voltage reference
#1508Systems and methods for a semiconductor structure having multiple semiconductor-device layers
#1509Tunable capacitor for FDSOI applications
#1510METHOD AND APPARATUS FOR HIGH PERFORMANCE PASSIVE-ACTIVE CIRCUIT INTEGRATION
#1511Isolated semiconductor layer over buried isolation layer
#1512Dual channel memory
#1513SEMICONDUCTOR SUBSTRATE AND FABRICATION METHOD THEREOF, AND SEMICONDUCTOR APPARATUS USING THE SAME AND FABRICATION METHOD THEREOF
#1514Dynamic threshold MOS and methods of forming the same
#1515Semiconductor device and method for controlling semiconductor device
#1516Fully-depleted silicon-on-insulator transistors
#1517Method for manufacturing a high-resistivity semiconductor-on-insulator substrate including an RF circuit overlapping a doped region in the substrate
#1518Passive device and radio frequency module formed on high resistivity substrate
#1519Semiconductor device and radio frequency module formed on high resistivity substrate
#1520LOW-WARPAGE SEMICONDUCTOR SUBSTRATE AND METHOD FOR PREPARING SAME
#1521Backside device contact
#1522High power RF switches using multiple optimized transistors
#1523Vertically integrated memory cell
#1524Semiconductor device having antenna and sensor elements
#1525Techniques for multiple gate workfunctions for a nanowire CMOS technology
#1526Semiconductor-on-insulator with back side heat dissipation
#1527Deep trench sidewall etch stop
#1528Memory device and method for manufacturing the same
#1529Electronic device including moat power metallization in trench
#1530Handle substrate of composite substrate for semiconductor, and composite substrate for semiconductor
#1531Three dimensional monolithic LDMOS transistor
#1532Semiconductor device
#1533Method for local isolation between transistors produced on an SOI substrate, in particular an FDSOI substrate, and corresponding integrated circuit
#1534Controllable gated sensor
#1535Embedded carbon-doped germanium as stressor for germanium nFET devices
#1536Semiconductor device and structure
#1537Optical biosensor device
#1538Radio frequency isolation using substrate opening
#1539Radio frequency isolation cavity formation using sacrificial material
#1540Channel SiGe devices with multiple threshold voltages on hybrid oriented substrates, and methods of manufacturing same
#1541SILICON-ON-INSULATOR DEVICES HAVING CONTACT LAYER
#1542Short circuit reduction in a ferroelectric memory cell comprising a stack of layers arranged on a flexible substrate
#1543Cavity formation in semiconductor devices
#1544Backside cavity formation in semiconductor devices
#1545Cavity formation in interface layer in semiconductor devices
#1546Method and structure for forming a dense array of single crystalline semiconductor nanocrystals
#1547Non-volatile composite nanoscopic fabric NAND memory arrays and methods of making same
#1548Integrated scintillator grid with photodiodes
#1549Compact self-aligned implantation transistor edge resistor for SRAM SEU mitigation
#1550Memory structure having array-under-periphery structure
#1551Semiconductor device with buried cavities and dielectric support structures
#1552SUBSTRATE BIAS FOR FIELD-EFFECT TRANSISTOR DEVICES
#1553Semiconductor structure having logic region and analog region
#1554Floating body memory cell having gates favoring different conductivity type regions
#1555Memory device, and semiconductor device and electronic appliance including the same
#1556Body bias multiplexer for stress-free transmission of positive and negative supplies
#1557Electronic device for ESD protection
#1558Preventing unauthorized use of integrated circuits for radiation-hard applications
#1559Programmable structured arrays
#1560Strained semiconductor using elastic edge relaxation of a stressor combined with buried insulating layer
#1561Semiconductor structure with integrated passive structures
#1562High-frequency device including high-frequency switching circuit
#1563Semiconductor structure with integrated passive structures
#1564Methodology to avoid gate stress for low voltage devices in FDSOI technology
#1565Semiconductor-on-insulator (SOI) lateral heterojunction bipolar transistor having an epitaxially grown base
#1566Semiconductor-on-insulator (SOI) lateral heterojunction bipolar transistor having an epitaxially grown base
#1567Apparatus and methods for MOS capacitor structures for variable capacitor arrays
#1568MOS capacitors structures for variable capacitor arrays and methods of forming the same
#1569MOS capacitors flow type devices and methods of forming the same
#1570Semiconductor device structure useful for bulk transistor and method of manufacturing same where a substrate extends commonly over a transistor, an element region, and a separation region
#1571Semiconductor integrated circuit
#1572Programmable active cooling device
#1573Method for making strained semiconductor device and related methods
#1574SILICON-ON-INSULATOR (SOI) WAFERS EMPLOYING MOLDED SUBSTRATES TO IMPROVE INSULATION AND REDUCE CURRENT LEAKAGE
#1575Techniques for multiple gate workfunctions for a nanowire CMOS technology
#1576METHOD OF FORMATION OF A SUBSTRATE OF THE SOI, IN PARTICULAR THE FDSOI, TYPE ADAPTED TO TRANSISTORS HAVING GATE DIELECTRICS OF DIFFERENT THICKNESSES, CORRESPONDING SUBSTRATE AND INTEGRATED CIRCUIT
#1577Efficient buried oxide layer interconnect scheme
#1578Nanowire or 2D material strips interconnects in an integrated circuit cell
#1579Integrated Circuit Assembly and Method of Making
#1580Techniques for dual dielectric thickness for a nanowire CMOS technology using oxygen growth
#1581Method and system for photonic interposer
#1582Method and structure of making enhanced UTBB FDSOI devices
#1583Method and structure of making enhanced UTBB FDSOI devices
#1584Semiconductor device
#1585Electrostatic discharge protection device structures and methods of manufacture
#1586Integrated circuits using silicon on insulator substrates and methods of manufacturing the same
#1587Method of making a CMOS semiconductor device using a stressed silicon-on-insulator (SOI) wafer
#1588Method for fabricating semiconductor structures including fin structures with different strain states, and related semiconductor structures
#1589Manufacturing method for vertical channel gate-all-around MOSFET by epitaxy processes
#1590Memory cell structure, method of manufacturing a memory, and memory apparatus
#1591Semiconductor device with low band-to-band tunneling
#1592Semiconductor structures including rails of dielectric material
#1593Surface devices within a vertical power device
#1594Methods of making integrated circuit assembly with faraday cage and including a conductive ring
#1595Semiconductor device with voids within silicon-on-insulator (SOI) structure and method of forming the semiconductor device
#1596Semiconductor device
#1597Deep trench isolation for RF devices on SOI
#1598Method and system for hybrid integration of optical communication systems
#1599Strained semiconductor using elastic edge relaxation of a stressor combined with buried insulating layer
#1600Vertical transistor and local interconnect structure
#1601Group III-N transistors on nanoscale template structures
#1602Electrostatic discharge (ESD) protection device
#1603Static electricity protection circuit, electro-optical apparatus, and electronic equipment
#1604Semiconductor device
#1605Integrated circuit having a MOM capacitor and method of making same
#1606Floating body storage device employing a charge storage trench
#1607Methods of forming nanotube films and articles
#1608Nonvolatile latch circuit and logic circuit, and semiconductor device using the same
#1609Complementary metal oxide semiconductor device with III-V optical interconnect having III-V epitaxial semiconductor material formed using lateral overgrowth
#1610SEMICONDUCTOR STRUCTURE HAVING FINFET ULTRA THIN BODY
#1611Semiconductor device
#1612III-V CMOS integration on silicon substrate via embedded germanium-containing layer
#1613Metal layout for radio-frequency switches
#1614Driver circuit, signal processing unit having the driver circuit, method for manufacturing the signal processing unit, and display device
#1615Bipolar transistor, band-gap reference circuit and virtual ground reference circuit and methods of fabricating thereof
#1616Isolated semiconductor layer in bulk wafer by localized silicon epitaxial seed formation
#1617Complementary metal-oxide silicon having silicon and silicon germanium channels
#1618Convex shaped thin-film transistor device having elongated channel over insulating layer in a groove of a semiconductor substrate
#1619Superlattice materials and applications
#1620SEMICONDUCTOR DEVICE
#1621Integrated circuit comprising PMOS transistors with different voltage thresholds
#1622Semiconductor device
#1623Devices and methods for improving voltage handling and/or bi-directionality of stacks of elements when connected between terminals
#1624Methods and apparatuses for use in tuning reactance in a circuit device
#1625Complementary high mobility nanowire neuron device
#1626Method and structure of making enhanced UTBB FDSOI devices
#1627Stressed nanowire stack for field effect transistor
#1628Stressed nanowire stack for field effect transistor
#1629Semiconductor device having SOI substrate
#1630Nanofluid sensor with real-time spatial sensing
#1631Semiconductor device and method of manufacturing the same
#1632Integrated scintillator grid with photodiodes
#1633Multiple Vin III-V FETs
#1634Multi-orientation SOI substrates for co-integration of different conductivity type semiconductor devices
#1635CMOS transistors including gate spacers of the same thickness
#1636Semiconductor device with mode designation and substrate bias circuits
#1637Semiconductor device and method for manufacturing the same
#1638Semiconductor device including embedded crystalline back-gate bias planes, related design structure and method of fabrication
#1639Deep trench spacing isolation for complementary metal-oxide-semiconductor (CMOS) image sensors
#1640Vertical fin eDRAM
#1641RADIO FREQUENCY DEVICE PROTECTED AGAINST OVERVOLTAGES
#1642Apparatus and methods for variable capacitor arrays
#1643Non-linearity compensation in radio frequency switches and devices
#1644Controllable single pixel sensors
#1645Method to match SOI transistors using a local heater element
#1646DEVICE CONNECTION THROUGH A BURIED OXIDE LAYER IN A SILICON ON INSULATOR WAFER
#1647Radio-frequency devices with gate node voltage compensation
#1648FinFETs having dielectric punch-through stoppers
#1649Uniaxially-strained FD-SOI finFET
#1650Radio-frequency switches having silicon-on-insulator field-effect transistors with reduced linear region resistance
#1651Metal trench capacitor and improved isolation and methods of manufacture
#1652FinFET vertical flash memory
#1653High dose implantation for ultrathin semiconductor-on-insulator substrates
#1654Method to form strained channel in thin box SOI structures by elastic strain relaxation of the substrate
#1655Manufacturing method of semiconductor device with silicon layer containing carbon
#1656Image sensor with vertical electrodes
#1657Front-side imager having a reduced dark current on SOI substrate
#1658Semiconductor device
#1659Semiconductor structure with active device and damaged region
#1660Process for integrated circuit fabrication including a liner silicide with low contact resistance
#1661Dual gate FD-SOI transistor
#1662Semiconductor film with adhesion layer and method for forming the same
#1663Semiconductor system and device
#1664Bipolar transistor manufacturing method
#1665Semiconductor devices with sidewall spacers of equal thickness
#1666Back-illuminated integrated imaging device with simplified interconnect routing
#16673D high resolution X-ray sensor with integrated scintillator grid
#1668Semiconductor device with anti-fuse memory element
#1669Mechanisms for forming radio frequency (RF) area of integrated circuit structure
#1670Semiconductor-on-insulator (SOI) device and related methods for making same using non-oxidizing thermal treatment
#1671High voltage metal oxide semiconductor field effect transistor integrated into extremely thin semiconductor on insulator process
#1672Method of localized annealing of semi-conducting elements using a reflective area
#1673Semiconductor device having a field effect transistor formed on a silicon-on-insulator substrate and manufacturing method thereof
#1674Semiconductor device and method of manufacturing the same
#1675Solar-powered energy-autonomous silicon-on-insulator device
#1676Schottky clamped radio frequency switch
#1677METHOD FOR FABRICATING SEMICONDUCTOR STRUCTURES INCLUDING TRANSISTOR CHANNELS HAVING DIFFERENT STRAIN STATES, AND RELATED SEMICONDUCTOR STRUCTURES
#1678CMOS nanowire structure
#1679Local interconnect layer enhanced ESD in a bipolar-CMOS-DMOS
#1680Method for fabricating semiconductor layers including transistor channels having different strain states, and related semiconductor layers
#1681Inductor heat dissipation in an integrated circuit
#1682Fully-depleted silicon-on-insulator transistors
#1683Nonvolatile memory device
#1684Dense arrays and charge storage devices
#1685Fabricating method for high voltage semiconductor power switching device
#1686Fully-depleted silicon-on-insulator transistors
#1687Method of fabricating SOI wafer by ion implantation
#1688Device with SRAM memory cells including means for polarizing wells of memory cell transistors
#1689Biosensor devices, systems and methods therefor
#1690Structure and method for reducing substrate parasitics in semiconductor on insulator technology
#1691Semiconductor device, method for manufacturing same, and nonvolatile semiconductor memory device
#1692Method of forming a semiconductor substrate with buried cavities and dielectric support structures
#1693Method and apparatus for use in improving linearity of MOSFETs using an accumulated charge sink-harmonic wrinkle reduction
#1694Boron rich nitride cap for total ionizing dose mitigation in SOI devices
#1695Semiconductor integrated circuit device comprising MISFETs in SOI and bulk subtrate regions
#1696High freuency semiconductor switch and wireless device
#1697Semiconductor device and fabrication method therefor
#1698Method of manufacturing a MISFET on an SOI substrate
#1699Backside source-drain contact for integrated circuit transistor devices and method of making same
#1700Heterogeneous semiconductor material integration techniques
#1701Circuit structures, memory circuitry, and methods
#1702Semiconductor device with surrounding gate transistors in a NOR circuit
#1703Dual channel memory
#1704SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE
#1705Semiconductor device
#1706JUNCTIONLESS NANOWIRE TRANSISTORS FOR 3D MONOLITHIC INTEGRATION OF CMOS INVERTERS
#1707CMOS in situ doped flow with independently tunable spacer thickness
#1708Trap rich layer for semiconductor devices
#1709FIELD EFFECT TRANSISTOR (FET) WITH SELF-ALIGNED CONTACTS, INTEGRATED CIRCUIT (IC) CHIP AND METHOD OF MANUFACTURE
#1710Semiconductor devices and structures
#1711Handler wafer removal by use of sacrificial inert layer
#1712Fabrication of perfectly symmetric gate-all-around FET on suspended nanowire using interface interaction
#1713Semiconductor memory device
#1714Semiconductor device with coils in different wiring layers
#1715Device and method for improving RF performance
#1716Compound for forming organic film, and organic film composition using the same, process for forming organic film, and patterning process
#1717Recess technique to embed flash memory in SOI technology
#1718Simplified multi-threshold voltage scheme for fully depleted SOI MOSFETs
#1719Techniques for creating a local interconnect using a SOI wafer
#1720Compound for forming organic film, and organic film composition using the same, process for forming organic film, and patterning process
#1721Dynamic threshold MOS and methods of forming the same
#1722Turnable breakdown voltage RF FET devices
#1723Semiconductor device and method of manufacturing the same
#1724Undercut insulating regions for silicon-on-insulator device
#1725Tunable breakdown voltage RF FET devices
#1726SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD FOR THE SAME
#1727Low leakage dual STI integrated circuit including FDSOI transistors
#1728Dual STI integrated circuit including FDSOI transistors and method for manufacturing the same
#1729Semiconductor structure with integrated passive structures
#1730ESD protection device and related fabrication methods
#1731Method for manufacturing semiconductor device
#1732Lateral MOSFET with dielectric isolation trench
#1733Semiconductor device and method of manufacturing the same
#1734Semiconductor device with six transistors forming a NAND circuit
#1735Memory device and manufacturing method the same
#1736Radio-frequency switch having dynamic body coupling
#1737Field-effect transistor including oxide semiconductor, and memory and semiconductor circuit including the same
#1738Method of forming different voltage devices with high-k metal gate
#1739Integration of optical components in integrated circuits by separating two substrates with an insulation layer
#1740Three dimensional semiconductor device having lateral channel
#1741Transistor and semiconductor device
#1742SOI WITH GOLD-DOPED HANDLE WAFER
#1743Buried signal transmission line
#1744Semiconductor memory having both volatile and non-volatile functionality and method of operating
#1745Radio frequency devices having reduced intermodulation distortion
#1746Single-chip field effect transistor (FET) switch with silicon germanium (SiGe) power amplifier and methods of forming
#1747Semiconductor device including SIU butted junction to reduce short-channel penalty
#1748Semiconductor device and manufacturing method of the same
#1749Method of manufacturing semiconductor device
#1750Backside source-drain contact for integrated circuit transistor devices and method of making same
#1751Tunable breakdown voltage RF FET devices
#1752Flexible active matrix circuits for interfacing with biological tissue
#1753P-FET with strained silicon-germanium channel
#1754Back gate in select transistor for eDRAM
#1755Embedding semiconductor devices in silicon-on-insulator wafers connected using through silicon vias
#1756Method for making strained semiconductor device and related methods
#1757Three-dimensional semiconductor architecture
#1758Semiconductor device with a NAND circuit having four transistors
#1759Semiconductor with a two-input NOR circuit
#1760Semiconductor switch, wireless apparatus, and method of designing semiconductor switch
#1761High density single-transistor antifuse memory cell
#1762Vertically integrated memory cell
#17633D semiconductor device having two layers of transistors
#1764Semiconductor device with voids within silicon-on-insulator (SOI) structure and method of forming the semiconductor device
#1765Cell string and reading method for the cell string
#1766Memory device, and semiconductor device and electronic appliance including the same
#1767Integrated semiconductor devices with single crystalline beam, methods of manufacture and design structure
#1768Silicon on nothing devices and methods of formation thereof
#1769CMOS photonic inverter
#1770Electrochemical capacitor and semiconductor chip having an electrochemical capacitor
#1771Method of integrating all active and passive optical devices on silicon-based integrated circuit
#1772INTEGRATED CIRCUIT (IC) CHIP HAVING BOTH METAL AND SILICON GATE FIELD EFFECT TRANSISTORs (FETs) AND METHOD OF MANUFACTURE
#1773High-frequency device including high-frequency switching circuit
#1774Silicon-on-insulator (SOI) complementary metal oxide semiconductor (CMOS) standard library cell circuits having a gate back-bias rail(s), and related systems and methods
#1775Semiconductor device and manufacturing method thereof
#1776Field effect transistors including contoured channels and planar channels
#1777Semiconductor device and method of fabricating the same
#1778Memristive RF switches
#1779Silicon and silicon germanium nanowire structures
#1780Semiconductor device and fabricating the same
#1781Semiconductor device and manufacturing method of semiconductor device
#1782Semiconductor device and method for manufacturing the same
#1783High voltage metal oxide semiconductor field effect transistor integrated into extremely thin semiconductor on insulator process
#1784Isolated semiconductor layer over buried isolation layer
#1785Silicon-on-insulator integrated circuit devices with body contact structures
#1786Trap rich layer formation techniques for semiconductor devices
#1787Strain engineering in back end of the line
#1788Integrated circuit comprising transistors with different threshold voltages
#1789Hybrid III-V technology to support multiple supply voltages and off state currents on same chip
#1790Transistor device structure that includes polycrystalline semiconductor thin film that has large grain size
#1791STRUCTURE AND METHOD OF FORMING ENHANCED ARRAY DEVICE ISOLATION FOR IMPLANTED PLATE EDRAM
#1792Semiconductor device including write access transistor having channel region including oxide semiconductor
#1793Semiconductor manufacturing method and semiconductor device
#1794Method and system for monolithic integration of photonics and electronics in CMOS processes
#1795Thin channel-on-insulator MOSFET device with n+ epitaxy substrate and embedded stressor
#1796p-FET with strained silicon-germanium channel
#1797Stressed nanowire stack for field effect transistor
#1798HV complementary bipolar transistors with lateral collectors on SOI with resurf regions under buried oxide
#1799Semiconductor device with peripheral breakdown protection
#1800Thin channel-on-insulator MOSFET device with n+ epitaxy substrate and embedded stressor