208216 ⎘
Particle irradiation apparatus, beam modifier device, and semiconductor device including a junction termination extension zone
#302Silicon carbide semiconductor device and method of manufacturing a silicon carbide semiconductor device
#303Termination structure for nanotube semiconductor devices
#304Semiconductor device and manufacturing method thereof
#305Silicon carbide epitaxial substrate and silicon carbide semiconductor device
#306Nitride semiconductor device
#307Charge-compensation semiconductor device and a manufacturing method therefor
#308Semiconductor device
#309Power device with multiple field stop layers
#310FIELD EFFECT SEMICONDUCTOR DEVICE WITH SILICON ALLOY REGION IN SILICON WELL AND METHOD FOR MAKING
#311Semiconductor device
#312Semiconductor device having a reduced surface doping in an edge termination area, and method for manufacturing thereof
#313Semiconductor device having regions of different concentraton of lifetime killer impurity provided in a silicon carbide layer
#314Semiconductor device
#315Power semiconductor device
#316Semiconductor device
#317High voltage semiconductor device
#318Transistor devices having source/drain structure configured with high germanium content portion
#319Avalanche-rugged silicon carbide (SiC) power device
#320Wide-bandgap semiconductor device including gate fingers between bond pads
#321Semiconductor device and method for producing semiconductor device
#322Semiconductor device
#323Silicon carbide semiconductor device and manufacturing method for the same
#324Power device with high aspect ratio trench contacts and submicron pitches between trenches
#325Fin-type field effect transistor and method of forming the same
#326Semiconductor device and method for manufacturing semiconductor device
#327Silicon carbide semiconductor device
#328Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device
#329Polarization-doped enhancement mode HEMT
#330Semiconductor device having a sense diode portion
#331Semiconductor device having a field electrode and a gate electrode in a trench structure and manufacturing method
#332Semiconductor integrated circuit with guard ring
#333Semiconductor device
#334Fabrication method for thin film transistor, thin film transistor and display apparatus
#335Semiconductor device
#336Semiconductor super-junction power device and manufacturing method therefor
#337Power semiconductor device and method for producing a power semiconductor device
#338Method of manufacturing semiconductor device
#339IGBT with improved terminal and manufacturing method thereof
#340Semiconductor device
#341Method of manufacturing a semiconductor device with wider sidewall spacer for a high voltage MISFET
#342Semiconductor device
#343Lateral gallium nitride JFET with controlled doping profile
#344Semiconductor device
#345Insulated gate bipolar transistor and fabrication method thereof
#346Methods for fabricating anode shorted field stop insulated gate bipolar transistor
#347Method of producing a semiconductor device
#348Insulated gate bipolar transistor and preparation method therefor
#349Semiconductor device and fabrication method
#350Semiconductor device comprising a clamping structure
#351Semiconductor device and method of manufacturing the semiconductor device
#352Semiconductor device, power conversion device, and method of manufacturing semiconductor device
#353SEMICONDUCTOR DEVICE INCLUDING AUXILIARY STRUCTURE
#354Method of manufacturing semiconductor device
#355Semiconductor device
#356Method of manufacturing silicon carbide semiconductor device and silicon carbide semiconductor device
#357Manufacturing method for semiconductor device having an oxidation-resistant insulating film in a termination region
#358Power semiconductor devices having gate trenches and buried edge terminations and related methods
#359Semiconductor device and method of manufacturing semiconductor device
#360Semiconductor device having an ohmic electrode including a nickel silicide layer
#361Semiconductor device having an emitter region and a contact region inside a mesa portion
#362Semiconductor structure with overlapping fins having different directions, and methods of fabricating the same
#363Semiconductor device and method of manufacturing the same
#364ENHANCEMENT MODE HEMT DEVICE
#365Semiconductor device, manufacturing method thereof, and electric power conversion device
#366Stacked Schottky diode
#367SiC-based superjunction semiconductor device
#368Nanotube termination structure for power semiconductor devices
#369Semiconductor device
#370Method of manufacturing semiconductor devices and semiconductor device containing hydrogen-related donors
#371Semiconductor device
#372Adaptive charge balanced edge termination
#373Power semiconductor device termination structure
#374High voltage termination structure of a power semiconductor device
#375Semiconductor device and method for producing the same
#376Semiconductor device with improved current flow distribution
#377Switching device and method of manufacturing the same
#378Semiconductor device and power conversion device
#379Tensile strained NFET and compressively strained PFET formed on strain relaxed buffer
#380Semiconductor device
#381Semiconductor devices and methods for forming a semiconductor device
#382Semiconductor device having auxiliary electrode formed in field plate region
#383Semiconductor device
#384Semiconductor device and manufacturing method
#385Semiconductor structure and associated fabricating method
#386Semiconductor device and method for manufacturing the same
#387Silicon carbide semiconductor device
#388Semiconductor device
#389Method of Manufacturing a Superjunction Semiconductor Device and Superjunction Semiconductor Device
#390Silicon carbide semiconductor device
#391Semiconductor device and semiconductor device manufacturing method
#392Dual deep trenches for high voltage isolation
#393Integrated circuit with an amplifier MOSFET
#394POWER MOSFET, AN IGBT, AND A POWER DIODE
#395ESD protection device and method for manufacturing the same
#396Power semiconductor device and method for manufacturing such a power semiconductor device
#397Power semiconductor device using wide bandgap semiconductor material and method of manufacturing power semiconductor device using wide bandgap semiconductor material
#398Semiconductor device and method for manufacturing same
#399MOSFET AND A METHOD FOR MANUFACTURING THE SAME
#400Semiconductor device for high-voltage circuit
#401High speed Schottky rectifier
#402Semiconductor device with metal layer along a step portion
#403Semiconductor devices and methods for forming semiconductor devices
#404SILICON CARBIDE SEMICONDUCTOR DEVICE
#405Semiconductor device having first and second electrode layers electrically disconnected from each other by a slit
#406Semiconductor device and method for manufacturing semiconductor device
#407Selective germanium p-contact metalization through trench
#408Semiconductor Device with Field Dielectric in an Edge Area
#409Semiconductor device and method for producing semiconductor device
#410High-speed diode with crystal defects and method of manufacturing
#411Nanotube semiconductor devices
#412Edge termination designs for super junction device
#413Semiconductor device with selectively etched surface passivation
#414Semiconductor device including semiconductor substrate, silicon carbide semiconductor layer, first electrode and second electrode
#415Semiconductor device having an edge termination region comprising a first edge termination region of a second conductivity type adjacent to a second edge termination region of a first conductivity type
#416High voltage device with low R
#417Self aligned epitaxial based punch through control
#418Semiconductor apparatus
#419Reverse-conducting semiconductor device
#420DIODE STRUCTURES WITH CONTROLLED INJECTION EFFICIENCY FOR FAST SWITCHING
#421Semiconductor device suppressing electric field concentration and method for manufacturing
#422Semiconductor device with suppressed decrease in breakdown voltage of an insulation film and manufacturing method of the same
#423Diode
#424Die stack assembly using an edge separation structure for connectivity through a die of the stack
#425Semiconductor device
#426Semiconductor device and manufacturing method thereof
#427Semiconductor device comprises two or more regions that have a same impurity concentration and differing carrier concentrations
#428Semiconductor device
#429Semiconductor device with backside N-type layer at active region/termination region boundary and extending into action region
#430Semiconductor device
#431Wide gap semiconductor device and method of manufacturing the same
#432Ultra high voltage device
#433Semiconductor device
#434Semiconductor device with needle-shaped field plate structures in a transistor cell region and in an inner termination region
#435Power device and method of manufacturing the same
#436Semiconductor device
#437Semiconductor structure and associated fabricating method
#438Tensile strained nFET and compressively strained pFET formed on strain relaxed buffer
#439Tensile strained nFET and compressively strained pFET formed on strain relaxed buffer
#440Method for forming a semiconductor device and a semiconductor device
#441Method and structure for forming on-chip anti-fuse with reduced breakdown voltage
#442Chip part and method of making the same
#443Chip diode and method for manufacturing same
#444TRANSISTORS WITH HIGH CONCENTRATION OF BORON DOPED GERMANIUM
#445Layered semiconductor having base layer including GaN substrate
#446Hydrogen occlusion semiconductor device
#447Method of manufacturing a semiconductor device with wider sidewall spacer for a high voltage MISFET
#448Semiconductor device including an edge construction with straight sections and corner sections
#449High voltage device with low R
#450Semiconductor device and method for manufacturing semiconductor device
#451Semiconductor device and method of manufacturing semiconductor device
#452Semiconductor devices comprising getter layers and methods of making and using the same
#453Semiconductor device and manufacturing method thereof
#454Semiconductor device with trench edge termination
#455SEMICONDUCTOR DEVICE
#456Field-effect semiconductor device having pillar regions of different conductivity type arranged in an active area
#457Power semiconductor device
#458Semiconductor device and method of manufacturing semiconductor device
#459Semiconductor device having an oxygen diffusion barrier
#460Semiconductor device and method of manufacturing the same
#461Trenched vertical power field-effect transistors with improved on-resistance and breakdown voltage
#462Semiconductor device
#463Power device and fabricating method thereof
#464TRANSISTOR STRUCTURE WITH REDUCED PARASITIC "SIDE WALL" CHARACTERISTICS
#465Power diode with improved reverse-recovery immunity
#466SiC semiconductor device with insulating film and organic insulating layer
#467Fin-type field effect transistor and method of forming the same
#468Method and apparatus for power device with multiple doped regions
#469Semiconductor device VDMOS having a gate insulating film having a high dielectric constant portion contacting the drift region for relaxing an electric field generated in the gate insulating film
#470Silicon carbide semiconductor device and method for producing the same
#471III-V fin on insulator
#472Diodes with multiple junctions
#473Semiconductor device
#474Nanotube semiconductor devices
#475Method for manufacturing semiconductor device and semiconductor device
#476Semiconductor device
#477Vertical semiconductor power component capable of withstanding high voltage
#478IGBT with waved floating P-Well electron injection
#479Particle irradiation apparatus, beam modifier device, and semiconductor device including a junction termination extension zone
#480Semiconductor device and method of manufacturing semiconductor device
#481Semiconductor device
#482Semiconductor device and method of manufacturing the same
#483Method of manufacturing silicon carbide semiconductor device
#484Silicon carbide semiconductor device and manufacturing method of silicon carbide semiconductor device
#485Method and structure for forming on-chip anti-fuse with reduced breakdown voltage
#486Semiconductor device and semiconductor device manufacturing method
#487Method of forming a semiconductor device termination and structure therefor
#488Semiconductor device and method for producing the same
#489Insulated gate semiconductor device and method for manufacturing the insulated gate semiconductor device
#490Semiconductor device with substantially equal impurity concentration JTE regions in a vicinity of a junction depth
#491Semiconductor device
#492Silicon carbide semiconductor device and method of manufacturing the same
#493Semiconductor device comprising a clamping structure
#494Ultra high voltage device
#495Methods for fabricating an integrated circuit having vertically overlapping short and long channel FinFETs
#496SEMICONDUCTOR DEVICE
#497Semiconductor device
#498Semiconductor device
#499Semiconductor integrated circuit device having enhancement type NMOS and depression type MOS with N-type channel impurity region and P-type impurity layer under N-type channel impurity region
#500Channel strain inducing architecture and doping technique at replacement poly gate (RPG) stage
#501Split gate semiconductor device with curved gate oxide profile
#502High voltage field balance metal oxide field effect transistor (FBM)
#503Method for processing a semiconductor layer, method for processing a silicon substrate, and method for processing a silicon layer
#504Semiconductor device manufacturing method
#505Silicon carbide semiconductor device
#506Super-junction semiconductor device comprising junction termination extension structure and method of manufacturing
#507Semiconductor device and method of manufacturing semiconductor device
#508Semiconductor device and method of manufacturing semiconductor device
#509Semiconductor device with parallel PN structures
#510Ion implantation apparatus with ion beam directing unit
#511Method for forming semiconductor device having super-junction structures
#512Semiconductor element, method for fabricating the same, and semiconductor device including the same
#513Nanotube semiconductor devices
#514Semiconductor device comprising auxiliary trench structures and integrated circuit
#515Semiconductor device comprising planar gate and trench field electrode structure
#516Semiconductor device
#517SCHOTTKY DIODE
#518Avalanche-rugged silicon carbide (SiC) power Schottky rectifier
#519SEMICONDUCTOR DEVICE
#520Chip part and method of making the same
#521Semiconductor device and method for producing semiconductor device
#522Array substrate, manufacturing method thereof and display device
#523SiC semiconductor device having pn junction interface and method for manufacturing the SiC semiconductor device
#524Ultra high voltage device
#525LATERALLY DIFFUSED METAL OXIDE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR
#526Method for manufacturing silicon carbide semiconductor device by selectively removing silicon from silicon carbide substrate to form protective carbon layer on silicon carbide substrate for activating dopants
#527SiC-based superjunction semiconductor device
#528Method of operating a reverse conducting IGBT
#529Semiconductor device
#530MOS transistor having a cell array edge zone arranged partially below and having an interface with a trench in an edge region of the cell array
#531Silicon carbide semiconductor device
#532Semiconductor device
#533Semiconductor device and method of manufacturing the same, power conversion device, three-phase motor system, automobile, and railway vehicle
#534Semiconductor device and semiconductor device manufacturing method
#535Semiconductor device
#536Semiconductor device
#537Semiconductor device manufacturing method, including substrate thinning and ion implanting
#538Manufacturing method of semiconductor apparatus and semiconductor apparatus
#539Compensation devices
#540Silicon carbide semiconductor device and manufacturing method for same
#541Power semiconductor device
#542Method of producing a semiconductor device
#543Wide band gap semiconductor device
#544Diode structures with controlled injection efficiency for fast switching
#545Silicon carbide semiconductor device and method for manufacturing same
#546Method and apparatus for power device with multiple doped regions
#547Schottky device and method of manufacture
#548SEMICONDUCTOR DEVICE, TERMINATION STRUCTURE AND METHOD OF FORMING THE SAME
#549Method of forming a semiconductor device including trench termination
#550Semiconductor device having buffer layer and method of forming the same
#551Semiconductor device
#552MOS-bipolar device
#553INCREASING BREAKDOWN VOLTAGE OF LDMOS DEVICES FOR FOUNDRY PROCESSES
#554Circuit configuration and manufacturing processes for vertical transient voltage suppressor (TVS) and EMI filter
#555Semiconductor device
#556Structures and methods with reduced sensitivity to surface charge
#557Power superjunction MOSFET device with resurf regions
#558High-voltage vertical power component
#559Insulated gate type semiconductor device and method for fabricating the same
#560Semiconductor device
#561Silicon carbide device and a method for forming a silicon carbide device
#562Semiconductor devices with horizontal gate all around structure and methods of forming the same
#563Semiconductor Device and a Method of Manufacturing Same
#564Semiconductor device
#565Electronic device including an isolation structure
#566Field-effect semiconductor device having alternating n-type and p-type pillar regions arranged in an active area
#567Semiconductor device with a termination mesa between a termination structure and a cell field of field electrode structures
#568Lateral PiN diodes and schottky diodes
#569Semiconductor device
#570SiC power device having a high voltage termination
#571Semiconductor structure and manufacturing method thereof
#572Semiconductor device with a shielding structure
#573Semiconductor device including high-voltage diode
#574Semiconductor device and method of manufacturing the same
#575Power MOSFET, an IGBT, and a power diode
#576Semiconductor device and semiconductor device manufacturing method
#577High Voltage Semiconductor Devices and Methods for their Fabrication
#578ELECTRO-OPTICAL DEVICE, ELECTRONIC APPARATUS, AND DRIVE CIRCUIT
#579Semiconductor device for high-voltage circuit
#580Semiconductor device
#581Semiconductor device with similar impurity concentration JTE regions
#582SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
#583Bipolar junction transistor structure
#584Charge compensation structure and manufacturing therefor
#585Method of forming semiconductor structure with horizontal gate all around structure
#586Charged balanced devices with shielded gate trench
#587High voltage field balance metal oxide field effect transistor (FBM)
#588Semiconductor device
#589Method of fabricating a GaN P-i-N diode using implantation
#590Semiconductor device having an insulated gate bipolar transistor arrangement
#591Insulated gate bipolar transistor including charge injection regions
#592SEMICONDUCTOR DEVICE
#593Semiconductor device with selectively etched surface passivation
#594Semiconductor device
#595Method of formation of a TI-IGBT
#596High electron mobility semiconductor device and method therefor
#597High-voltage semiconductor device with a termination structure
#598VDMOS having a drift zone with a compensation structure
#599VDMOS having a non-depletable extension zone formed between an active area and side surface of semiconductor body
#600Semiconductor device having vertical MOSFET with super junction structure, and method for manufacturing the same