208219 ⎘
Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor; Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions; Isolation within the component, i.e. internal isolation PN junctions
INTEGRATED CIRCUIT COMPRISING A SUBSTRATE EQUIPPED WITH A TRAP-RICH REGION, AND FABRICATING PROCESS
#2Lateral fin static induction transistor
#3BREAKDOWN DIODES AND METHODS OF MAKING THE SAME
#4Power Diode Device and Method of Manufacturing the Same
#5CIRCUITS HAVING ENHANCED ELECTRICAL ISOLATION
#6HIGH-VOLTAGE LATERAL GAN-ON-SILICON SCHOTTKY DIODE WITH REDUCED JUNCTION LEAKAGE CURRENT
#7METHOD OF MAKING HIGH POWER TVS WITH ENHANCED REPETITIVE SURGE PERFORMANCE
#8SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING THEREOF
#9SEMICONDUCTOR DEVICE LAYOUT
#10Semiconductor structure and method of forming the same
#11HIGH VOLTAGE RESISTOR WITH HIGH VOLTAGE JUNCTION TERMINATION
#12SEMICONDUCTOR DEVICE COMPRISING A LATERAL SUPER JUNCTION FIELD EFFECT TRANSISTOR
#13Heterojunction bipolar transistor with buried trap rich isolation region
#14A VERTICAL HEMT AND A METHOD TO PRODUCE A VERTICAL HEMT
#15ISOLATION STRUCTURE FOR ACTIVE DEVICES
#16Field effect transistor with controllable resistance
#17Isolation regions for charge collection and removal
#18Semiconductor devices and method of manufacturing the same
#19SUPPRESSION OF PARASITIC ACOUSTIC WAVES IN INTEGRATED CIRCUIT DEVICES
#20Silicon on insulator semiconductor device with mixed doped regions
#21High resistivity silicon-on-insulator substrate comprising an isolation region
#22SEMICONDUCTOR DEVICE WITH SENSE ELEMENT
#23Semiconductor device having a main transistor, a sense transistor, and a bypass diode structure
#24Semiconductor structure and method for guarding a low voltage surface region from a high voltage surface region
#25Lateral bipolar transistor
#26Semiconductor device with suppression of decrease of withstand voltage, and method for manufacturing the semiconductor device
#27SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
#28Semiconductor structure and method of forming thereof
#29GUARD RING AND CIRCUIT DEVICE
#30Semiconductor structure and method for manufacturing thereof
#31Transient-voltage-suppression protection device, manufacturing process and electronic product
#32Semiconductor devices and method of manufacturing the same
#33SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
#34Semiconductor device with controllable channel length and manufacturing method of semiconductor device with controllable channel length
#35Integrated circuit device and method of fabricating the same
#36Semiconductor device and method for manufacturing the same
#37Semiconductor device and method for manufacturing the same
#38Method for fabricating semiconductor device with P-N junction isolation structure
#39Semiconductor device with P-N junction isolation structure and method for fabricating the same
#40Low dark count rate semiconductor structures
#41Heterojunction bipolar transistor with buried trap rich isolation region
#42Field effect transistor with controllable resistance
#43Radio frequency (RF) switch device on silicon-on-insulator (SOI) and method for fabricating thereof
#44Device isolator with reduced parasitic capacitance
#45Semiconductor device layout
#46Electrostatic discharge protection devices and methods of forming electrostatic discharge protection devices
#47Integrated circuit comprising a substrate equipped with a trap-rich region, and fabricating process
#48Semiconductor device
#49Trench isolation structure and manufacturing method therefor
#50Lateral Schottky diode
#51Silicon on insulator semiconductor device with mixed doped regions
#52SEMICONDUCTOR DEVICES
#53Method for preparing a p-type semiconductor structure, enhancement mode device and method for manufacturing the same
#54Semiconductor device with doped region adjacent isolation structure in extension region
#55TRENCH-TYPE INSULATED GATE SEMICONDUCTOR DEVICE INCLUDING AN EMITTER TRENCH AND AN OVERLAPPED FLOATING REGION
#56Electrostatic discharge handling for sense IGBT using Zener diode
#57Method of forming guard ring and circuit device
#58Diode structures
#59Semiconductor device including trench electrode structures
#60Method for detecting a differential fault analysis attack and a thinning of the substrate in an integrated circuit, and associated integrated circuit
#61Isolation structure for active devices
#62Method of preparing an isolation region in a high resistivity silicon-on-insulator substrate
#63Lateral fin static induction transistor
#64Semiconductor device with controllable channel length and manufacturing method of semiconductor device with controllable channel length
#65Semiconductor devices and method of manufacturing the same
#66Method of preparing an isolation region in a high resistivity silicon-on-insulator substrate
#67N-well resistor
#68Semiconductor device and method for manufacturing semiconductor device
#69Semiconductor structure and manufacturing method thereof
#70Shield structure for backside through substrate vias (TSVs)
#71Semiconductor device having a main transistor, a sense transistor and at least one bypass diode structure
#72Integrated circuit device and method of fabricating the same
#73Diode structures
#74Back ballasted vertical NPN transistor
#75HEMT having conduction barrier between drain fingertip and source
#76High voltage resistor with high voltage junction termination
#77Fast recovery inverse diode
#78SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
#79Semiconductor device and method of manufacturing the same
#80Die stack assembly using an edge separation structure for connectivity through a die of the stack
#81Electric field shielding in silicon carbide metal-oxide-semiconductor (MOS) device cells using body region extensions
#82Semiconductor devices
#83Integrated circuit device and method of fabricating the same
#84SPAD image sensor and associated fabricating method
#85Semiconductor device with integrated clamp diode
#86IGBT device
#87LATCHUP GUARD RING GRID
#88High voltage lateral junction diode device
#89Semiconductor integrated circuit having a first buried layer and a second buried layer
#90Field effect transistor with controllable resistance
#91High-voltage semiconductor devices having buried layer overlapped with source and well regions
#92Power semiconductor device and method for manufacturing the same
#93Semiconductor device layout
#94GaN lateral vertical HJFET with source-P block contact
#95A SEMICONDUCTOR DEVICE COMPRISING AN INSULATED GATE FIELD TRANSISTOR CONNECTED ON SERIES WITH A HIGH VOLTAGE FIELD EFFECT TRANSISTOR
#96Isolation structure for active devices
#97Transient voltage suppressor
#98Semiconductor device and manufacturing method thereof
#99Isolated wells for resistor devices
#100Device isolation
#101Silicon on insulator semiconductor device with mixed doped regions
#102High voltage semiconductor device
#103Trench power seminconductor device and manufacturing method thereof
#104Structure for improved noise signal isolation
#105Semiconductor device and power conversion system
#106Silicon on insulator semiconductor device with mixed doped regions
#107Power silicon carbide based MOSFET transistors with improved short circuit capabilities and methods of making such devices
#108Semiconductor devices and method of manufacturing the same
#109Semiconductor layer between source/drain regions and gate spacers
#110Integrated RF front end system
#111Variable thickness gate oxide transcap
#112Field effect transistor with controllable resistance
#113High voltage bipolar structure for improved pulse width scalability
#114Semiconductor devices having multi-level metallization structures
#115Semiconductor structure and method for manufacturing thereof
#116Integrated circuit comprising a substrate equipped with a trap-rich region, and fabricating process
#117High energy ion implantation for junction isolation in silicon carbide devices
#118Method of fabricating electrically isolated diamond nanowires and its application for nanowire MOSFET
#119Power semiconductor device and method for manufacturing the same
#120Isolation structure for active devices
#121Vertical fin-type devices and methods
#122Nanosheet substrate isolated source/drain epitaxy by counter-doped bottom epitaxy
#123Circuit device and electronic apparatus
#124Semiconductor device containing integrated circuit communicating with external apparatus via two terminals
#125Method of preparing an isolation region in a high resistivity silicon-on-insulator substrate
#126High voltage lateral junction diode device
#127Vertical bipolar transistors
#128Field effect transistor with controllable resistance
#129Lateral fin static induction transistor
#130Back ballasted vertical NPN transistor
#131Semiconductor device
#132Device isolator with reduced parasitic capacitance
#133Broken bandgap contact
#134Fast recovery inverse diode
#135III-NITRIDE VERTICAL TRANSISTOR WITH APERTURE REGION FORMED USING ION IMPLANTATION
#136Method for detecting a differential fault analysis attack and a thinning of the substrate in an integrated circuit, and associated integrated circuit
#137SPAD image sensor and associated fabricating method
#138Method to neutralize incorrectly oriented printed diodes
#139Circuit device including guard ring and method of forming guard ring
#140Semiconductor device layout
#141Semiconductor structures and methods of forming the same
#142Isolation structure for active devices
#143Zener diode with semiconductor region annularly surrounding anode
#144Reducing MOSFET body current
#145Isolated wells for resistor devices
#146Isolated wells for resistor devices
#147Semiconductor device
#148Substrate isolation for low-loss radio frequency (RF) circuits
#149Lateral fin static induction transistor
#150Semiconductor devices
#151High voltage semiconductor device
#152Insulating magnetic components on silicon using PNP or NPN junctions
#153SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
#154Semiconductor device suitable for electrostatic discharge (ESD) protection
#155Trench-type insulated gate semiconductor device including an emitter trench and an overlapped floating region
#156Substrate isolation for low-loss radio frequency (RF) circuits
#157Bulk CMOS RF switch with reduced parasitic capacitance
#158Bulk CMOS RF switch with reduced parasitic capacitance
#159Semiconductor device with III-nitride channel region and silicon carbide drift region
#160Device isolation design rules for HAST improvement
#161Semiconductor device having a sense diode portion
#162Semiconductor device and manufacturing method thereof
#163Semiconductor device and method of manufacturing semiconductor device
#164Semiconductor device
#165Integrated circuit device and method of fabricating the same
#166Field plate trench FET and a semiconductor component
#167Insulated gate bipolar transistor and fabrication method thereof
#168PNP-type bipolar transistor manufacturing method
#169High-voltage semiconductor device having a doped isolation region between a level shift region and a high voltage region
#170High voltage junction terminating structure of high voltage integrated circuit
#171Semiconductor devices with multi-gate structure and method of manufacturing the same
#172High resistivity silicon-on-insulator substrate comprising an isolation region
#173Laterally diffused metal oxide semiconducting devices with lightly-doped isolation layers
#174HEMT having conduction barrier between drain fingertip and source
#175Semiconductor device, method for manufacturing semiconductor device, inverter circuit, driving device, vehicle, and elevator
#176Semiconductor device for preventing field inversion
#177Integrated RF front end system
#178Semiconductor device
#179Semiconductor device and method for producing the same
#180Trench power semiconductor device and manufacturing method thereof
#181DEEP CHANNEL ISOLATED DRAIN METAL-OXIDE-SEMICONDUCTOR TRANSISTORS
#182SHALLOW DRAIN METAL-OXIDE-SEMICONDUCTOR TRANSISTORS
#183JFET structure and manufacturing method of the same
#184Semiconductor device
#185Power semiconductor module
#186Isolation structure and manufacturing method thereof for high-voltage device in a high-voltage BCD process
#187Device isolator with reduced parasitic capacitance
#188PNP-type bipolar transistor manufacturing method
#189Semiconductor device, method for manufacturing semiconductor device, inverter circuit, driving device, vehicle, and elevator
#190Nonvolatile memory having a shallow junction diffusion region
#191Fabrication of vertical doped fins for complementary metal oxide semiconductor field effect transistors
#192Nitride semiconductor device
#193High resistivity silicon-on-insulator substrate comprising an isolation region
#194Semiconductor device, method for manufacturing semiconductor device, inverter circuit, driving device, vehicle, and elevator
#195Standard cell architecture for parasitic resistance reduction
#196Semiconductor device, manufacturing method therefor and semiconductor module
#197Electric field shielding in silicon carbide metal-oxide-semiconductor (MOS) device cells using body region extensions
#198Electric field shielding in silicon carbide metal-oxide-semiconductor (MOS) device cells
#199Semiconductor device having self-isolating bulk substrate and method therefor
#200Electric field shielding in silicon carbide metal-oxide-semiconductor (MOS) devices having an optimization layer
#201Electric field shielding in silicon carbide metal-oxide-semiconductor (MOS) device cells using channel region extensions
#202FinFET device structure and method for forming same
#203FORMING A SELF-ALIGNED SINGLE DIFFUSION BREAK (SDB) ISOLATION STRUCTURE IN A GATE REGION OF A DIODE FOR REDUCED CAPACITANCE, RESISTANCE, AND/OR AREA
#204High-voltage lateral GaN-on-silicon schottky diode with reduced junction leakage current
#205High-voltage lateral GaN-on-silicon Schottky diode
#206Semiconductor structure including a transistor including a gate electrode region provided in a substrate and method for the formation thereof
#207Die stack assembly using an edge separation structure for connectivity through a die of the stack
#208ISOLATED III-N SEMICONDUCTOR DEVICES
#209Edge termination for super-junction MOSFETs
#210Semiconductor device having self-isolating bulk substrate and method therefor
#211SELECTIVE COUPLING OF VOLTAGE FEEDS FOR BODY BIAS VOLTAGE IN AN INTEGRATED CIRCUIT DEVICE
#212Field effect transistor structure with abrupt source/drain junctions
#213Method for manufacturing semiconductor structure
#214Partial, self-biased isolation in semiconductor devices
#215ULTRASOUND T/R ISOLTATION DISOLATOR WITH FAST RECOVERY TIME ON SOI
#216Horizontal current bipolar transistors with improved breakdown voltages
#217Methods of forming a contact structure for a vertical channel semiconductor device and the resulting device
#218Compact CMOS device isolation
#219Isolated III-N semiconductor devices
#220Low cost and mask reduction method for high voltage devices
#221Semiconductor integrated circuit
#222Schottky diode having a well with peripherial cathod regions and center andoe region
#223Trenched vertical power field-effect transistors with improved on-resistance and breakdown voltage
#224Semiconductor device
#225Electrostatic discharge protection device for differential signal devices
#226Hybrid semiconductor structure on a common substrate
#227Trench-type insulated gate semiconductor device including an emitter trench and an overlapped floating region
#228High voltage bipolar structure for improved pulse width scalability
#229Transient voltage suppressor and manufacture method thereof
#230Semiconductor device
#231Semiconductor device layout structure
#232Semiconductor device
#233Semiconductor device and method for producing the same
#234Semiconductor device
#235Integrated RF front end system
#236Nitride semiconductor device
#237Semiconductor device and radio frequency module formed on high resistivity substrate
#238Semiconductor device and radio frequency module formed on high resistivity substrate
#239Method of forming guard ring structure
#240Nonvolatile memory cell with improved isolation structures
#241Semiconductor devices and manufacturing methods thereof
#242Device isolator with reduced parasitic capacitance
#243High voltage resistor with high voltage junction termination
#244Electronic device using group III nitride semiconductor and its fabrication method and an epitaxial multi-layer wafer for making it
#245Semiconductor device and method of manufacturing the same
#246Semiconductor device and method of manufacturing the same
#247Bulk finFET with partial dielectric isolation featuring a punch-through stopping layer under the oxide
#248Semiconductor device and method for testing the semiconductor device
#249Method of manufacturing a semiconductor device
#250Low cost and mask reduction method for high voltage devices
#251Group III-nitride-based enhancement mode transistor having a multi-heterojunction fin structure
#252Alignment marks in non-STI isolation formation and methods of forming the same
#253Semiconductor devices and manufacturing methods thereof
#254Inverters and manufacturing methods thereof
#255Semiconductor device for preventing field inversion
#256Semiconductor device
#257Semiconductor devices and related fabrication methods
#258Structure to prevent deep trench moat charging and moat isolation fails
#259High voltage lateral DMOS transistor with optimized source-side blocking capability
#260High voltage lateral DMOS transistor with optimized source-side blocking capability
#261Device having improved radiation hardness and high breakdown voltages
#262SELECTIVE COUPLING OF VOLTAGE FEEDS FOR BODY BIAS VOLTAGE IN AN INTEGRATED CIRCUIT DEVICE
#263High voltage transistor structure
#264Semiconductor device for sensor application using contacts located on top surface and bottom surface and method for fabricating thereof
#265Diode and signal output circuit including the same
#266Smart semiconductor switch
#267Methods for fabricating radiation hardened MOS devices
#268Apparatus and methods for transceiver interface overvoltage clamping
#269Active device and semiconductor device with the same
#270Device isolation structure and manufacture method
#271Termination of super junction power MOSFET
#272Semiconductor device having localized charge balance structure and method
#273High voltage device and method for manufacturing the same
#274Semiconductor device
#275Product comprised of FinFET devices with single diffusion break isolation structures
#276Saucer-shaped isolation structures for semiconductor devices
#277Isolation structures for semiconductor devices including trenches containing conductive material
#278Integrated circuit including ESD device and radiation emitting device
#279Charge compensation structure and manufacturing therefor
#280Compact CMOS device isolation
#281Semiconductor device
#282Semiconductor device and driver circuit with source and isolation structure interconnected through a diode circuit, and method of manufacture thereof
#283Transistor structure having buried island regions
#284LOW ENERGY ION IMPLANTATION OF A JUNCTION BUTTING REGION
#285Silicon carbide semiconductor device
#286Semiconductor device
#287Semiconductor device and super junction semiconductor device having semiconductor mesas
#288Low-cost complementary BiCMOS integration scheme
#289Semiconductor devices and methods of manufacturing the same
#290Semiconductor isolation structure
#291Group III-nitride-based enhancement mode transistor having a heterojunction fin structure
#292TRANSISTOR WITH REDUCTED PARASITIC
#293Field-effect semiconductor device and manufacturing therefor
#294Isolation structure and manufacturing method thereof for high-voltage device in a high-voltage BCD process
#295Semiconductor device
#296Semiconductor power devices and methods of manufacturing the same
#297Diode and signal output circuit including the same
#298Device isolation in FinFET CMOS
#299UNDOPED EPITAXIAL LAYER FOR JUNCTION ISOLATION IN A FIN FIELD EFFECT TRANSISTOR (FINFET) DEVICE
#300Current aperture vertical electron transistors with ammonia molecular beam epitaxy grown p-type gallium nitride as a current blocking layer