208219 ⎘
Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor; Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions; Isolation within the component, i.e. internal isolation PN junctions
Semiconductor device
#302Semiconductor device with junction termination extension
#303Device having improved radiation hardness and high breakdown voltages
#304Semiconductor device and method of manufacturing the same
#305Method of making an insulated gate bipolar transistor structure
#306Lateral PNP bipolar transistor formed with multiple epitaxial layers
#307IC with floating buried layer ring for isolation of embedded islands
#308GaN device with reduced output capacitance and process for making same
#309Method for making electronic device using group III nitride semiconductor having specified dislocation density oxygen/electron concentration, and active layer thickness
#310Electronic device using group III nitride semiconductor having specified dislocation density, oxygen/electron concentration, and active layer thickness
#311Electronic device and epitaxial multilayer wafer of group III nitride semiconductor having specified dislocation density, oxygen/electron concentration, and active layer thickness
#312Isolation structures for semiconductor devices
#313SEMICONDUCTOR DEVICE AND PRODUCTION METHOD FOR SEMICONDUCTOR DEVICE
#314Semiconductor device
#315Semiconductor device
#316SEMICONDUCTOR DEVICE
#317Device isolation in finFET CMOS
#318Isolation structure having a second impurity region with greater impurity doping concentration surrounds a first impurity region and method for forming the same, and image sensor including the isolation structure and method for fabricating the image sensor
#319Semiconductor device and method of manufacturing semiconductor device
#320Tunable semiconductor component provided with a current barrier
#321Semiconductor device having multiple wells for low- and high-voltage CMOS transistors
#322TID hardened and single event transient single event latchup resistant MOS transistors and fabrication process
#323Semiconductor device and method for producing the same
#324Isolation structure
#325Semiconductor device with charge compensation structure
#326Vertical gallium nitride transistors and methods of fabricating the same
#327Isolation structure of high-voltage driving circuit
#328Semiconductor device having two-way conduction characteristics, and electrostatic discharge protection circuit incorporating the same
#329Semiconductor device with increased ESD resistance and manufacturing method thereof
#330High voltage device with reduced leakage
#331Method for manufacturing semiconductor device
#332Semiconductor device having localized charge balance structure and method
#333Ultra-high voltage N-type-metal-oxide-semiconductor (UHV NMOS) device and methods of manufacturing the same
#334Semiconductor device with HCI protection region
#335Semiconductor device including a diode and method of manufacturing a semiconductor device
#336Semiconductor structure and a method for manufacturing the same
#337LDMOS sense transistor structure for current sensing at high voltage
#338Integrated RF front end system
#339Semiconductor device
#340Semiconductor device and driver circuit with source and isolation structure interconnected through a diode circuit, and method of manufacture thereof
#341Regenerative building block and diode bridge rectifier and methods
#342High-voltage vertical power component
#343Isolated through silicon via and isolated deep silicon via having total or partial isolation
#344N well implants to separate blocks in a flash memory device
#345SiGe heterojunction bipolar transistor with an improved breakdown voltage-cutoff frequency product
#346SEMICONDUCTOR DEVICE AND SEMICONDUCTOR MODULE
#347Semiconductor device, manufacturing method thereof, protective element, and manufacturing method thereof
#348Semiconductor device and method of manufacturing semiconductor device
#349Electrical overstress protection using through-silicon-via (TSV)
#350Dummy gate for a high voltage transistor device
#351Insulated gate bipolar transistor structure having low substrate leakage
#352Electrical overstress protection using through-silicon-via (TSV)
#353Lateral PNP bipolar transistor formed with multiple epitaxial layers
#354High voltage resistor with high voltage junction termination
#355Semiconductor structure and a method for manufacturing the same
#356Current aperture vertical electron transistors with ammonia molecular beam epitaxy grown P-type gallium nitride as a current blocking layer
#357Semiconductor device
#358Semiconductor power device
#359Superjunction structures for power devices and methods of manufacture
#360Semiconductor apparatus
#361Ultra-high voltage N-type-metal-oxide-semiconductor (UHV NMOS) device and methods of manufacturing the same
#362High voltage semiconductor device and driving circuit
#363SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
#364SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME
#365N well implants to separate blocks in a flash memory device
#366Schottky barrier diode with perimeter capacitance well junction
#367Integration of a sense FET into a discrete power MOSFET
#368High-voltage vertical power component
#369Zener diode with reduced substrate current
#370High voltage device with partial silicon germanium epi source/drain
#371Configuration of gate to drain (GD) clamp and ESD protection circuit for power device breakdown protection
#372Semiconductor device and power conversion apparatus using the same
#373Semiconductor component structure with vertical dielectric layers
#374Power device with improved edge termination
#375Semiconductor device and manufacturing method thereof
#376Alternate 4-terminal JFET geometry to reduce gate to source capacitance
#377SILICON CARBIDE SEMICONDUCTOR STRUCTURES, DEVICES AND METHODS FOR MAKING THE SAME
#378Integration of sense FET into discrete power MOSFET
#379Integration of a sense FET into a discrete power MOSFET
#380Power MOSFET package
#381Integrated circuit including ESD device
#382Configuration of gate to drain (GD) clamp and ESD protection circuit for power device breakdown protection
#383Field effect transistor structure with abrupt source/drain junctions
#384Tunable Semiconductor Component Provided with a Current Barrier
#385Semiconductor component structure with vertical dielectric layers
#386Layout patterns for deep well region to facilitate routing body-bias voltage
#387High voltage device with reduced leakage
#388Integration of a sense FET into a discrete power MOSFET
#389Isolation structures for integrated circuits
#390ISOLATION STRUCTURE FOR SEMICONDUCTOR DEVICE WITH MULTIPLE TERMINALS
#391Power device edge termination having a resistor with one end biased to source voltage
#392Semiconductor device having a trench type high-power MISFET
#393Regenerative building block and diode bridge rectifier and methods
#394Semiconductor device
#395Semiconductor device with a noise prevention structure
#396Semiconductor device having deep trench charge compensation regions and method
#397Semiconductor device and method of manufacturing semiconductor device
#398Semiconductor device
#399N well implants to separate blocks in a flash memory device
#400Semiconductor device and method of fabricating semiconductor device
#401Field effect transistor structure with abrupt source/drain junctions
#402Isolation structures for integrated circuits
#403Isolation structures for integrated circuits
#404Isolation structures for integrated circuits
#405Insulated gate semiconductor device
#406Latch-up resistant semiconductor structures on hybrid substrates and methods for forming such semiconductor structures
#407Selective coupling of voltage feeds for body bias voltage in an integrated circuit device
#408Selective coupling of voltage feeds for body bias voltage in an integrated circuit device
#409Method of forming isolation structure in semiconductor substrate
#410Isolation structures for integrated circuits and modular methods of forming the same
#411Modular methods of forming isolation structures for integrated circuits
#412Forming reverse-extension MOS in standard CMOS flow
#413Integrated circuit with bipolar transistor
#414Reverse blocking semiconductor device and a method for manufacturing the same
#415Isolation structures for integrated circuits and modular methods of forming the same
#416Silicon structures with improved resistance to radiation events
#417Power device with improved edge termination
#418Tunable semiconductor component provided with a current barrier
#419Method for fabricating a MESFET
#420Semiconductor device having deep trench charge compensation regions and method
#421High-voltage transistor fabrication with trench etching technique
#422N well implants to separate blocks in a flash memory device
#423Method of fabricating a field effect transistor structure with abrupt source/drain junctions
#424Semiconductor device and fabrication method of the same
#425Reverse blocking semiconductor device and a method for manufacturing the same
#426Semiconductor device having deep trench charge compensation regions and method
#427Superjunction semiconductor device structure
#428Semiconductor device edge termination structure
#429Method of fabricating semiconductor devices employing at least one modulation doped quantum well structure and one or more etch stop layers for accurate contact formation
#430Method of fabricating semiconductor devices employing at least one modulation doped quantum well structure and one or more etch stop layers for accurate contact formation
#431Combo memory design and technology for multiple-function java card, sim-card, bio-passport and bio-id card applications
#432Shallow trench filled with two or more dielectrics for isolation and coupling for stress control
#433Semiconductor device with a noise prevention structure
#434Semiconductor device and manufacturing method thereof
#435Transistor comprising fill areas in the source drain and/or drain region
#436Semiconductor power device with charge compensation structure and monolithic integrated circuit, and method for fabricating it
#437Semiconductor device
#438Shallow trench filled with two or more dielectrics for isolation and coupling or for stress control
#439Method of fabricating a field effect transistor structure with abrupt source/drain junctions
#440Integrated circuits including an electrostatic discharge device and methods of producing the same
#441Method for forming FinFET device structure
#442Hydrogen diffusion barrier structures for CMOS devices and method of making the same
#443Reducing MOSFET body current
#444Semiconductor device
#445High-voltage semiconductor device and method for manufacturing the same
#446Fast recovery inverse diode
#447Switches with deep trench depletion and isolation structures
#448Fin-type field effect transistors with single-diffusion breaks and method
#449Stacked nanosheet field-effect transistor with diode isolation
#450Semiconductor device isolation via depleted coupling layer
#451Semiconductor device
#452HEMT having conduction barrier between drain fingertip and source
#453Trench separation diffusion for high voltage device
#454Electrostatic discharge protection structure
#455FinFET devices including epitaxially grown device isolation regions, and a method of manufacturing same
#456Deep trench with self-aligned sinker
#457Semiconductor devices and related fabrication methods
#458Reduction of single event upsets within a semiconductor integrated circuit