208232 ⎘
Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor; Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions; Surface layout of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
Thermally stable semiconductor power device
#3002Method of operating integrated circuit embedded with non-volatile programmable memory having variable coupling related application data
#3003Integrated circuit embedded with non-volatile programmable memory having variable coupling
#3004Semiconductor device and method for manufacturing same
#3005Semiconductor device
#3006Field plate trench transistor and method for producing it
#3007Semiconductor device and manufacturing method thereof
#3008Method of manufacturing semiconductor device
#3009Semiconductor device and manufacturing the same
#3010Semiconductor device
#3011Semiconductor component and method
#3012Semiconductor device
#3013Lateral power diode with self-biasing electrode
#3014Semiconductor integrated circuit device and method of manufacturing the same
#3015Semiconductor device including a resurf region with forward tapered teeth
#3016Semiconductor element and method for manufacturing same
#3017Layout schemes and apparatus for high performance DC-DC output stage
#3018Power MOSFET array
#3019Power Semiconductor Device
#3020Semiconductor device having deep trench charge compensation regions and method
#3021Semiconductor device including a columnar intermediate region and manufacturing method thereof
#3022Semiconductor device
#3023Semiconductor device and method of fabricating the same
#3024Vertical power semiconductor device with high breakdown voltage corresponding to edge termination and device regions
#3025High density FET with integrated Schottky
#3026Semiconductor device
#3027Semiconductor device and method of manufacturing the same
#3028Semiconductor device
#3029Superjunction structures for power devices
#3030Semiconductor device and method for fabricating the same
#3031Semiconductor device and a method of manufacturing the same
#3032Semiconductor device with structured current spread region and method
#3033Semiconductor device
#3034Trench misfet
#3035Gate metal routing for transistor with checkerboarded layout
#3036Shielded gate trench (SGT) MOSFET cells implemented with a schottky source contact
#3037Semiconductor device having trench gate structure
#3038Semiconductor device
#3039Semiconductor device and manufacturing method thereof
#3040LATERAL DOUBLE DIFFUSED METAL OXIDE SEMICONDUCTOR DEVICE
#3041Semiconductor device and method of forming a semiconductor device
#3042Thin silicon-on-insulator high voltage transistor with body ground
#3043Trench gate semiconductor device and method of manufacturing the same
#3044Structure of a high breakdown voltage element for use in high power application
#3045Semiconductor device
#3046Semiconductor device
#3047Method of forming high density trench FET with integrated Schottky diode
#3048Semiconductor component and method for producing it
#3049Semiconductor device and electrical circuit device using thereof
#3050Semiconductor device
#3051TECHNIQUE FOR FORMING THE DEEP DOPED COLUMNS IN SUPERJUNCTION
#3052Semiconductor device
#3053Integrated Schottky diode and power MOSFET
#3054Power trench gate FET with active gate trenches that are contiguous with gate runner trench
#3055Semiconductor device and method for manufacturing same
#3056Power semiconductor device
#3057Semiconductor device and method of fabricating semiconductor device
#3058Semiconductor device and method for manufacturing the same
#3059Semiconductor device
#3060Robust ESD LDMOS device
#3061Power semiconductor devices with trenched shielded split gate transistor and methods of manufacture
#3062Power semiconductor device and manufacturing method of the same
#3063Power semiconductor devices with shield and gate contacts and methods of manufacture
#3064Insulated gate bipolar transistor device comprising a depletion-mode MOSFET
#3065Layout method for vertical power transistors having a variable channel width
#3066High power semiconductor device capable of preventing parasitical bipolar transistor from turning on
#3067Semiconductor device
#3068Tungsten plug drain extension
#3069Method of forming a semiconductor structure comprising insulating layers with different thicknesses
#3070Trench gate power semiconductor device
#3071Semiconductor device
#3072Insulated gate field effect transistors
#3073Semiconductor device and manufacturing method thereof
#3074Complementary Asymmetric High Voltage Devices and Method of Fabrication
#3075Lateral DMOS device structure and fabrication method therefor
#3076Semiconductor device
#3077Lateral high-voltage transistor with vertically-extended voltage-equalized drift region
#3078Semiconductor device and method of manufacturing a semiconductor device
#3079Method for manufacturing semiconductor device with planer gate electrode and trench gate electrode
#3080PROCESS FOR HIGH VOLTAGE SUPERJUNCTION TERMINATION
#3081Semiconductor device with a resistance element in a trench
#3082Layouts for multiple-stage ESD protection circuits for integrating with semiconductor power device
#3083Soi vertical bipolar power component
#3084Process for high voltage superjunction termination
#3085Temperature sensing device
#3086Semiconductor device and method for manufacturing the same
#3087Semiconductor device having super junction structure
#3088Lateral DMOS device structure and manufacturing method thereof
#3089Electrostatic discharge (ESD) protection structure and a circuit using the same
#3090Semiconductor device and fabrication method thereof
#3091III-nitride semiconductor device with trench structure
#3092Method of manufacturing a semiconductor device having a trench surrounding plural unit cells
#3093Semiconductor device structure with a tapered field plate and cylindrical drift region geometry
#3094Semiconductor device and method for producing it
#3095Technique for forming the deep doped columns in superjunction
#3096Semiconductor device
#3097Wide gap semiconductor power device with temperature independent resistivity due to channel region resistivity having negative temperature dependence
#3098LDMOS device
#3099Semiconductor device and method of fabricating the same
#3100Semiconductor component and method of manufacture
#3101Insulated gate bipolar transistor with built-in freewheeling diode
#3102Semiconductor device
#3103Semiconductor device with a high breakdown voltage device
#3104Trenched semiconductor device
#3105Method and structure for making a top-side contact to a substrate
#3106Semiconductor device
#3107Semiconductor component and method for producing it
#3108Semiconductor device and method for fabricating the same
#3109Semiconductor apparatus having lateral type MIS transistor
#3110Insulated gate semiconductor device
#3111Insulated gate transistor
#3112High mobility power metal-oxide semiconductor field-effect transistors
#3113Semiconductor apparatus
#3114Structure and method for forming accumulation-mode field effect transistor with improved current capability
#3115SEMICONDUCTOR DEVICE
#3116Semiconductor device
#3117Methods of forming inter-poly dielectric (IPD) layers in power semiconductor devices
#3118Semiconductor component with cell structure and method for producing the same
#3119Gate pullback at ends of high-voltage vertical transistor structure
#3120Segmented pillar layout for a high-voltage vertical transistor
#3121Power Semiconductor Devices with Barrier Layer to Reduce Substrate Up-Diffusion and Methods of Manufacture
#3122Sensing FET integrated with a high-voltage transistor
#3123Checkerboarded high-voltage vertical transistor layout
#3124Gate metal routing for transistor with checkerboarded layout
#3125Semiconductor device
#3126Semiconductor device having trench edge termination structure
#3127Method of fabricating super trench MOSFET including buried source electrode
#3128Power MISFET, semiconductor device and DC/DC converter
#3129COMPONENT ARRANGEMENT INCLUDING A MOS TRANSISTOR HAVING A FIELD ELECTRODE
#3130Structure of a high breakdown voltage element for use in high power applications
#3131Closed trench MOSFET with floating trench rings as termination
#3132Method of manufacturing a MOSFET structure
#3133Semiconductor device and method for manufacturing the same
#3134SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
#3135Power semiconductor device
#3136Process for high voltage superjunction termination
#3137Method of manufacture for a semiconductor device
#3138Process for high voltage superjunction termination
#3139Semiconductor device
#3140Power MOS transistor incorporating fixed charges that balance the charge in the drift region
#3141Semiconductor device
#3142Geometry of MOS device with low on-resistance
#3143Trench gate-type MOSFET device and method for manufacturing the same
#3144Power Semiconductor Device
#3145Insulated gate type semiconductor device and method for fabricating the same
#3146Trenched shield gate power semiconductor devices and methods of manufacture
#3147Semiconductor device
#3148SEMICONDUCTOR DEVICE
#3149Trench type MOSFET and method of fabricating the same
#3150Power transistor with trench sinker for contacting the backside
#3151Methods of making power semiconductor devices with thick bottom oxide layer
#3152Power semiconductor devices having termination structures and methods of manufacture
#3153Power semiconductor device
#3154Semiconductor device having first and second resurf layers
#3155Semiconductor component
#3156Semiconductor device and method of manufacturing the same
#3157Semiconductor device having vertical electrodes structure
#3158Trench MOSFET with cell layout, ruggedness, truncated corners
#3159ESD structure for high voltage ESD protection
#3160MOS-GATED DEVICE HAVING A BURIED GATE AND PROCESS FOR FORMING SAME
#3161Trenched MOSFET device configuration with reduced mask processes
#3162MOS-GATED DEVICE HAVING A BURIED GATE AND PROCESS FOR FORMING SAME
#3163Transistor and method for manufacturing same
#3164Group III nitride based semiconductor device having trench structure or mesa structure and production method therefor
#3165GaN related compound semiconductor element and process for producing the same and device having the same
#3166Integrated circuit including a semiconductor device
#3167Devices, methods, and systems with MOS-gated trench-to-trench lateral current flow
#3168Power mosfet including inter-source connection pattern
#3169Semiconductor component having a transition region
#3170Cathode cell design
#3171Method of manufacturing semiconductor apparatus
#3172Semiconductor apparatus and manufacturing method using a gate contact section avoiding an upwardly stepped polysilicon gate contact
#3173Insulated-gate semiconductor device and PN junction diodes
#3174Semiconductor device
#3175Power semiconductor device
#3176Insulated gate bipolar transistor having contact region with variable width
#3177High voltage gate driver integrated circuit including high voltage junction capacitor and high voltage LDMOS transistor
#3178Power MOSFET with recessed field plate
#3179Semiconductor device
#3180High-voltage lateral DMOS device with diode clamp
#3181High-voltage extended drain MOSFET
#3182High-voltage lateral trench MOSFET
#3183Semiconductor devices
#3184Edge termination region for high-voltage bipolar-CMOS-DMOS integrated circuit devices
#3185High-voltage depletion mode MOSFET
#3186High-voltage lateral DMOS device
#3187Semiconductor device having lateral MOS transistor and zener diode
#3188Insulated gate semiconductor device
#3189Semiconductor device and manufacturing method of the semiconductor device
#3190High voltage sensor device
#3191SEMICONDUCTOR DEVICE
#3192Planar SRFET using no additional masks and layout method
#3193SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SAME
#3194Vertical gate semiconductor device and method for manufacturing the same
#3195Semiconductor device
#3196Bipolar high voltage/power semiconductor device having first and second insulated gated and method of operation
#3197Semiconductor devices
#3198Trench MOS type silicon carbide semiconductor device and method for manufacturing the same
#3199Method of manufacturing semiconductor device having improved RESURF Trench isolation and method of evaluating manufacturing method
#3200Semiconductor device having spaced unit regions and heavily doped semiconductor layer
#3201Semiconductor device used in step-up DC-DC converter, and step-up DC-DC converter
#3202Thermally stable semiconductor power device
#3203Semiconductor device and method of manufacturing the same
#3204Insulated gate semiconductor device
#3205Trench transistor
#3206Lateral trench gate FET with direct source-drain current path
#3207Closed cell configuration to increase channel density for sub-micron planar semiconductor power device
#3208Method of fabricating semiconductor device
#3209Semiconductor device having improved breakdown voltage and method of manufacturing the same
#3210Trench Type Mosfet And Method Of Fabricating The Same
#3211Method of fabricating semiconductor device
#3212High-voltage lateral DMOS device
#3213Method of fabricating semiconductor device
#3214Power semiconductor device
#3215Semiconductor device, battery protection circuit and battery pack
#3216Semiconductor device having superjunction structure formed of p-type and n-type pillar regions
#3217Power semiconductor device
#3218SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
#3219Method of making a MOS-gated transistor with reduced miller capacitance
#3220Insulated gate semiconductor device
#3221Semiconductor device, method of fabricating the same, and patterning mask utilized by the method
#3222High mobility power metal-oxide semiconductor field-effect transistors
#3223Semiconductor device having a circular-arc profile on a silicon surface
#3224Vertical and trench type insulated gate MOS semiconductor device
#3225Semiconductor devices and method of manufacturing them
#3226DMOS device of small dimensions and manufacturing process thereof
#3227Method of manufacturing semiconductor device
#3228Insulated gate type thyristor
#3229Termination for a superjunction device
#3230High density trench FET with integrated Schottky diode and method of manufacture
#3231Bipolar power semiconductor component comprising a p-type emitter and more highly doped zones in the p-type emitter, and production method
#3232Semiconductor device and manufacturing method of the same
#3233Semiconductor component arrangement comprising a trench transistor
#3234Edge termination structure for semiconductor components
#3235Power semiconductor device with a plurality of gate electrodes
#3236Periphery design for charge balance power devices
#3237Lateral double-diffused MOSFET transistor with a lightly doped source
#3238Semiconductor device and method of manufacturing the semiconductor device
#3239Semiconductor component arrangement having a power transistor and a temperature measuring arrangement
#3240Semiconductor device
#3241Power semiconductor component with a drift zone and a high-dielectric compensation zone and method for producing a compensation zone
#3242Multilayered semiconductor structure containing a MISFET, a resistor, a capacitor, and an inductor
#3243Shielded gate trench (SGT) MOSFET devices and manufacturing processes
#3244SEMICONDUCTOR DEVICE
#3245Lateral power transistor with self-biasing electrodes
#3246Super trench MOSFET including buried source electrode
#3247Superjunction power semiconductor device
#3248Trench-gate semiconductor devices and the manufacture thereof
#3249Charge balance insulated gate bipolar transistor
#3250Hetero junction semiconductor device
#3251Monolithically integrated circuit
#3252High-breakdown-voltage insulated gate semiconductor device
#3253Semiconductor device
#3254LDMOS device with improved ESD performance
#3255Semiconductor device
#3256Method of fabricating a lateral double-diffused MOSFET
#3257Trench-gated FET for power device with active gate trenches and gate runner trench utilizing one-mask etch
#3258Semiconductor device
#3259Semiconductor component and method
#3260Trench-gate MOS transistor composed of multiple conductors
#3261Semiconductor device
#3262SEMICONDUCTOR DEVICE
#3263FIELD PLATE TRENCH TRANSISTOR AND METHOD FOR PRODUCING IT
#3264Semiconductor device
#3265DMOS transistor with optimized periphery structure
#3266Trench insulated gate field effect transistor
#3267Semiconductor device
#3268High voltage integration circuit with freewheeling diode embedded in transistor
#3269Method of forming a low capacitance semiconductor device and structure therefor
#3270Trench insulated gate field effect transistor
#3271Small-sized semiconductor device featuring protection circuit for MOSFET
#3272Semiconductor device having super junction MOS transistor and method for manufacturing the same
#3273Electrostatic discharge (ESD) protection structure and a circuit using the same
#3274Lateral SOI semiconductor device
#3275Insulated gate type semiconductor device and method for fabricating the same
#3276VERTICAL TRANSISTOR WITH FIELD REGION STRUCTURE
#3277Semiconductor device and a method of manufacturing the same
#3278Power semiconductor device
#3279Method of fabricating semiconductor device
#3280Trench MOSFET
#3281Semiconductor structure, method for operating a semiconductor structure and method for producing a semiconductor structure
#3282Semiconductor device having separation region
#3283Semiconductor device and method of manufacturing the same
#3284Semiconductor device
#3285High performance lateral bipolar transistor
#3286Single finger gate transistor
#3287Radio frequency power semiconductor device package comprising dielectric platform and shielding plate
#3288Semiconductor device including ESD protective element
#3289Lateral semiconductor device
#3290Insulated gate semiconductor device
#3291Semiconductor device, the method of manufacturing the same, and two-way switching device using the semiconductor devices
#3292Semiconductor device
#3293Semiconductor device having LDMOS transistor and method for manufacturing the same
#3294Insulated gate transistor incorporating diode
#3295Lateral double-diffused field effect transistor and integrated circuit having same
#3296Method for producing a trench transistor and trench transistor
#3297Semiconductor device with two overlapping diffusion layers held at floating voltage for improving withstand voltage
#3298Power semiconductor device and method therefor
#3299DMOS transistor with floating poly-filled trench for improved performance through 3-D field shaping
#3300Semiconductor device and manufacturing method thereof