208232 ⎘
Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor; Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions; Surface layout of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
Semiconductor device
#3302Trench semiconductor device of improved voltage strength, and method of fabrication
#3303Semiconductor device
#3304DMOSFET and planar type MOSFET
#3305Semiconductor device and method for manufacturing thereof
#3306Semiconductor apparatus and manufacturing method thereof
#3307Method of manufacturing a trench transistor having a heavy body region
#3308Power semiconductor device with interconnected gate trenches
#3309Trench gate field effect devices
#3310Efficient transistor structure
#3311Semiconductor device
#3312Embedded silicon-controlled rectifier (SCR) for HVPMOS ESD protection
#3313Semiconductor device having deep trench charge compensation regions and method
#3314Semiconductor device
#3315Efficient transistor structure
#3316Efficient transistor structure
#3317Efficient transistor structure
#3318HIGH-VOLTAGE SEMICONDUCTOR DEVICE
#3319Field effect transistor and application device thereof
#3320Power semiconductor component with a low on-state resistance
#3321Trench-gate semiconductor device and manufacturing method of trench-gate semiconductor device
#3322Semiconductor element and method of manufacturing the same
#3323Power semiconductor device
#3324Power semiconductor device with current sense capability
#3325Insulated gate semiconductor device, protection circuit and their manufacturing method
#3326Semiconductor device
#3327Semiconductor device
#3328Semiconductor device including diffusion layer formed in drift region disposed apart from base region
#3329Semiconductor device
#3330Semiconductor device and method for manufacturing the same
#3331High voltage semiconductor devices with JFET regions containing dielectrically isolated junctions
#3332High voltage analog switch ICS and ultrasound imaging systems using same
#3333High density hybrid MOSFET device
#3334High power semiconductor device capable of preventing parasitical bipolar transistor from turning on
#3335IGBT or like semiconductor device of high voltage-withstanding capability
#3336DMOS transistor with a poly-filled deep trench for improved performance
#3337Semiconductor device and manufacturing the same
#3338Semiconductor device and manufacturing method of the same
#3339Lateral MISFET and method for fabricating it
#3340Semiconductor device
#3341Semiconductor device with improved electrostatic tolerance
#3342Method of manufacturing a superjunction device
#3343Semiconductor device and method for fabricating the same
#3344Semiconductor device having power transistors and Schottky barrier diode
#3345Trench gate type insulated gate bipolar transistor
#3346MONOLITHIC CLASS D AMPLIFIER
#3347Semiconductor device and a method of manufacturing the same
#3348Process for high voltage superjunction termination
#3349Transistor
#3350Semiconductor device incorporating protective diode with stable ESD protection capabilities
#3351Power semiconductor device and method therefor
#3352Tungsten plug drain extension
#3353Vertical field effect transistor
#3354Power semiconductor device and method therefor
#3355Bi-directional transistor and method therefor
#3356High-voltage field effect transistor having isolation structure
#3357Semiconductor device and method for manufacturing same
#3358System for vertical DMOS with slots
#3359Semiconductor device
#3360Semiconductor device
#3361High-breakdown-voltage insulated gate semiconductor device
#3362Semiconductor cell array with unit cells having adjacently surrounding source and gate electrode
#3363Power semiconductor devices and methods of manufacture
#3364Power semiconductor devices and methods of manufacture
#3365Semiconductor device
#3366Shielded gate trench (SGT) MOSFET cells implemented with a schottky source contact
#3367Method of fabricating a lateral double-diffused MOSFET (LDMOS) transistor
#3368Enhancing Schottky breakdown voltage (BV) without affecting an integrated MOSFET-Schottky device layout
#3369Vertical transistor with field region structure
#3370Semiconductor device and method for manufacturing the same
#3371High-voltage power semiconductor device
#3372Vertical gate semiconductor device and method for fabricating the same
#3373Semiconductor device having deep trench charge compensation regions and method
#3374Superjunction semiconductor device structure
#3375Semiconductor device edge termination structure
#3376Semiconductor device
#3377Semiconductor device and manufacturing method thereof
#3378High voltage sensor device and method therefor
#3379Semiconductor device having a high withstand voltage
#3380Power semiconductor device with endless gate trenches
#3381Insulated gate semiconductor device and method of manufacturing the same
#3382Semiconductor device
#3383Semiconductor device having vertical metal insulator semiconductor transistors having plural spatially overlapping regions of different conductivity type
#3384Power semiconductor device with a base region and method of manufacturing same
#3385Power semiconductor switching element
#3386Dielectric isolation type semiconductor device and method for manufacturing the same
#3387Technique for forming the deep doped regions in superjunction devices
#3388Connection, configuration, and production of a buried semiconductor layer
#3389Method of producing a semiconductor device
#3390Field effect transistor and fabrication method
#3391Semiconductor device and method of manufacturing the same
#3392Method for fabricating a voltage-stable PMOSFET semiconductor structure
#3393Semiconductor device
#3394Power trench transistor
#3395Lateral trench transistor, as well as a method for its production
#3396Bi-directional power switch
#3397Semiconductor device and method for manufacturing the same
#3398Semiconductor apparatus and method of manufacturing the same
#3399Method of fabricating a lateral double-diffused MOSFET (LDMOS) transistor
#3400Semiconductor apparatus and method of manufacturing the same
#3401Low thermal resistance semiconductor device and method therefor
#3402Semiconductor device with increased drain breakdown voltage
#3403Semiconductor device
#3404Lateral semiconductor transistor
#3405Semiconductor device
#3406MOS-gated transistor with reduced miller capacitance
#3407Field effect trench transistor having active trenches
#3408Semiconductor device including an LDMOS transistor
#3409Vertical conduction power electronic device and corresponding realization method
#3410Vertical MOSFET
#3411Semiconductor device
#3412Semiconductor device
#3413Method of forming a low capacitance semiconductor device and structure therefor
#3414Power semiconductor device having an improved ruggedness
#3415Semiconductor device
#3416Semiconductor device having super junction structure and method for manufacturing the same
#3417Field effect transistor and application device thereof
#3418Efficient transistor structure
#3419Field effect transistor and application device thereof
#3420High voltage and low on-resistance LDMOS transistor having radiation structure and isolation effect
#3421Semiconductor device with improved breakdown voltage and high current capacity
#3422Semiconductor power device having a top-side drain using a sinker trench
#3423Method of manufacturing lateral MOSFET structure of an integrated circuit having separated device regions
#3424Self-aligned production method for an insulated gate semiconductor device cell and insulated gate semiconductor device cell
#3425Accumulation device with charge balance structure and method of forming the same
#3426Power semiconductor device
#3427Semiconductor device
#3428Insulated gate semiconductor device
#3429Power semiconductor with functional element guide structure
#3430Method of isolating the current sense on power devices while maintaining a continuous stripe cell
#3431Transistor
#3432Semiconductor device
#3433Power semiconductor device having high breakdown voltage, low on-resistance and small switching loss and method of forming the same
#3434Semiconductor device and method for manufacturing the same
#3435Field effect power transistor
#3436High voltage gate driver integrated circuit including high voltage junction capacitor and high voltage LDMOS transistor
#3437Vertical transistor and a semiconductor integrated circuit apparatus having the same
#3438Semiconductor device and its manufacturing method
#3439Super trench MOSFET including buried source electrode and method of fabricating the same
#3440Method of forming a MOS-controllable power semiconductor device for use in an integrated circuit
#3441Semiconductor device and method of forming a semiconductor device
#3442Semiconductor device
#3443MOS-gated device having a buried gate and process for forming same
#3444Trench-type power MOSFET with embedded region at the bottom of the gate and increased breakdown voltage
#3445High performance, integrated, MOS-type semiconductor device and related manufacturing process
#3446Semiconductor device and manufacturing method thereof
#3447Semiconductor output circuit
#3448Optimized trench power MOSFET with integrated schottky diode
#3449Semiconductor device with high breakdown voltage
#3450Semiconductor device
#3451Trench transistor
#3452Semiconductor device comprising transistor pair isolated by trench isolation
#3453Semiconductor device and method of manufacturing the semiconductor device
#3454Method of manufacturing a superjunction device
#3455LDMOS transistor with enhanced termination region for high breakdown voltage with on-resistance
#3456Power semiconductor device
#3457Bidirectional semiconductor device and a manufacturing method thereof
#3458Planarization method of manufacturing a superjunction device
#3459Current sense trench type MOSFET with improved accuracy and ESD withstand capability
#3460Trench-gate semiconductor devices
#3461Semiconductor device and manufacturing method of the same
#3462High-voltage vertical transistor with edge termination structure
#3463Semiconductor device and a method of manufacturing the same
#3464Power semiconductor devices and methods of manufacture
#3465Semiconductor device with enhanced breakdown voltage
#3466Method of producing a semiconductor device
#3467Vertical gate semiconductor device and method for fabricating the same
#3468Edge termination in MOS transistors
#3469Injection enhanced gate transistor including second emitter in dummy region to prevent waveform vibration associated with negative gate capacitance
#3470Integrated electronic disconnecting circuits, methods, and systems
#3471Semiconductor substrate and semiconductor device using the same
#3472Shrunk low on-resistance DMOS structure
#3473Insulated gate semiconductor device
#3474Semiconductor device
#3475Semiconductor device
#3476High voltage drain-extended transistor
#3477III-nitride semiconductor device with trench structure
#3478Semiconductor device having a trench surrounding each of plural unit cells
#3479Vertical gate semiconductor device and method for fabricating the same
#3480Semiconductor device
#3481Dielectric isolation type semiconductor device and method for manufacturing the same
#3482MOS field effect transistor with reduced on-resistance
#3483Lateral FET structure with improved blocking voltage and on resistance performance and method
#3484Semiconductor device and method for fabricating the same
#3485MOS power component with a reduced surface area
#3486System for high-precision double-diffused MOS transistors
#3487Semiconductor device and method of fabricating the same
#3488Metal-oxide-semiconductor device having improved gate arrangement
#3489Efficient transistor structure
#3490Modification of carrier mobility in a semiconductor device
#3491Method of fabricating a lateral double-diffused MOSFET
#3492Semiconductor device including multiple wiring layers and circuits operating in different frequency bands
#3493Method of manufacturing semiconductor device
#3494Trench DMOS transistor structure having a low resistance path to a drain contact located on an upper surface
#3495Semiconductor device, the method of manufacturing the same, and two-way switching device using the semiconductor devices
#3496Cellular mosfet devices and their manufacture
#3497Insulated gate type semiconductor device and method for fabricating the same
#3498Insulated gate transistor
#3499Method of manufacturing a trench transistor having a heavy body region
#3500Semiconductor device having periodic construction
#3501Lateral short-channel DMOS, method of manufacturing the same, and semiconductor device
#3502Insulated gate transistor
#3503Semiconductor device and manufacturing method thereof
#3504Method of manufacturing lateral MOSFET structure of an integrated circuit having separated device regions
#3505Insulated gate transistor incorporating diode
#3506Method of fabricating semiconductor device
#3507Integrated circuit with a PN junction diode
#3508Trench MOSFET with increased channel density
#3509Semiconductor device
#3510Ballasting MOSFETs using staggered and segmented diffusion regions
#3511Multifinger-type electrostatic discharge protection element
#3512Power mosfet having conductor plug structured contacts
#3513Semiconductor component including plural trench transistors with intermediate mesa regions
#3514Super-junction semiconductor device and method of manufacturing the same
#3515Insulated gate bipolar transistor with built-in freewheeling diode
#3516Transistor with improved safe operating area
#3517Low on resistance power MOSFET with variably spaced trenches and offset contacts
#3518Semiconductor device and its manufacturing method
#3519Semiconductor device and method for manufacturing the same
#3520Trench gate silicon carbide MOSFET device and fabrication method thereof
#3521Power semiconductor device and manufacturing method thereof
#3522Silicon carbide MOSFET with wave-shaped channel regions
#3523FinFET with shorter fin height in drain region than source region and related method
#3524Isolation structure for IGBT devices having an integrated diode
#3525Alignment-tolerant gallium oxide device
#3526Semiconductor devices
#3527Gallium arsenide cell and logic circuit
#3528BCD semiconductor device and method for manufacturing the same
#3529Vertical power MOSFET device having doped regions between insulated trenches and a junction arranged therebetween
#3530Semiconductor device, method of manufacturing the same and power conversion device
#3531High power transistor with interior-fed gate fingers
#3532Drain ledge for self-aligned gate and independent channel region and drain-side ridges for SLCFET
#3533Embedded field plate field effect transistor
#3534Semiconductor device
#3535Termination design for trench superjunction power MOSFET
#3536Power MOSFET
#3537High voltage device and manufacturing method thereof
#3538Semiconductor device
#3539Laterally diffused metal oxide semiconductor with segmented gate oxide
#3540Metal track cutting in standard cell layouts
#3541Power schottky diodes having local current spreading layers and methods of forming such devices
#3542Kind of power tri-gate LDMOS
#3543Field-effect transistor (FET) devices employing adjacent asymmetric active gate / dummy gate width layout
#3544Gallium nitride semiconductor device with isolated fingers
#3545Semiconductor device
#3546High voltage transistor
#3547LDMOS device with graded body doping
#3548Trench MOSFET with shielded gate and diffused drift region
#3549Method for fabricating low-cost isolated resurf LDMOS and associated BCD manufacturing process
#3550Shielded trench semiconductor devices and related fabrication methods
#3551LDMOS device with high-potential-biased isolation ring
#3552Semiconductor device
#3553High voltage vertical FPMOS fets
#3554Super-junction trench MOSFET structure
#3555Super-junction trench MOSFETs with closed cell layout
#3556Semiconductor device