208232 ⎘
Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor; Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions; Surface layout of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
Semiconductor device with surface insulating film
#902Insulated-gate semiconductor device and method of manufacturing the same
#903Semiconductor device and method for manufacturing the same
#904Semiconductor device
#905Hybrid active-field gap extended drain MOS transistor
#906Semiconductor device
#907LDMOS transistor
#908Semiconductor device and method for manufacturing same
#909Method for forming a lateral super-junction MOSFET device and termination structure
#910LDMOS transistor with gate structure having alternating regions of wider and narrower spacing to a body region
#911Method of manufacturing semiconductor device
#912Semiconductor device and method of manufacturing the same
#913Semiconductor device
#914Layout for needle cell trench MOSFET
#915Silicon carbide semiconductor component with edge termination structure
#916SEMICONDUCTOR DEVICE HAVING THROUGH HOLE, SOURCE AND GATE ELECTRODE STRUCTURES
#917Method of manufacturing semiconductor device
#918Semiconductor device, and method for manufacturing semiconductor device
#919SRAM structure
#920Semiconductor device having a source electrode contact trench
#921Semiconductor device and manufacturing method therefor
#922Power semiconductor device having a field electrode
#923Dual-gate trench IGBT with buried floating P-type shield
#924Semiconductor device
#925Semiconductor device
#926Semiconductor device including an integrated resistor
#927Termination design for trench superjunction power MOSFET
#928Semiconductor device having super junction metal oxide semiconductor structure and fabrication method for the same
#929Semiconductor device and method for manufacturing semiconductor device
#930Method of manufacturing a semiconductor device
#931Isolation structure for semiconductor device having self-biasing buried layer and method therefor
#932Semiconductor device
#933Semiconductor device
#934Insulated-gate semiconductor device and method of manufacturing the same
#935Semiconductor device
#936Semiconductor device
#937SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
#938Semiconductor device with termination structure including field zones and method of manufacturing
#939Semiconductor device and method of manufacturing semiconductor device
#940Power semiconductor device and method of fabricating the same
#941Semiconductor device and method for manufacturing the same
#942Method of manufacturing semiconductor device
#943Semiconductor on Insulator Devices Containing Permanent Charge
#944Semiconductor device
#945Switching element and method of manufacturing the same
#946Semiconductor device including silicon carbide
#947Method for forming vertical field effect transistor devices having alternating drift regions and compensation regions
#948IGBT with dV/dt controllability
#949Method for producing IGBT with dV/dt controllability
#950Silicide block isolation for reducing off-capacitance of a radio frequency (RF) switch
#951Semiconductor device and method for manufacturing the same
#952Semiconductor device and method for manufacturing the same
#953Silicon carbide semiconductor device
#954Semiconductor device and method of operation for low and high threshold voltage transistors
#955Semiconductor integrated circuit device
#956High voltage metal oxide semiconductor device and manufacturing method thereof
#957MOS-Gated Power Devices, Methods, and Integrated Circuits
#958Insulated gate semiconductor device having trench termination structure and method
#959Nano-tube MOSFET technology and devices
#960Semiconductor device and method of manufacturing the same
#961High voltage termination structure of a power semiconductor device
#962Semiconductor device having a schottky barrier diode
#963Semiconductor device
#964Semiconductor devices having a plurality of unit cell transistors that have smoothed turn-on behavior and improved linearity
#965Power semiconductor device
#966Insulated gate bipolar transistor and diode
#967Insulated gate bipolar transistor
#968Semiconductor device
#969Power semiconductor device having fully depleted channel regions
#970SEMICONDUCTOR SWITCHING ELEMENT
#971Semiconductor device
#972Semiconductor device
#973Dual gate metal-oxide-semiconductor field-effect transistor
#974Silicon carbide semiconductor device with trench gate structure and vertical PN junction between body region and drift structure
#975Method of producing semiconductor device for reducing variations of device characteristics within a surface of a semiconductor wafer
#976Semiconductor device and method of manufacturing semiconductor device
#977Semiconductor device having termination trench
#978Semiconductor device and manufacturing method thereof
#979Semiconductor device and manufacturing method of the same
#980Semiconductor device
#981Semiconductor device
#982Bypassed gate transistors having improved stability
#983Semiconductor device
#984SEMICONDUCTOR DEVICE
#985Power switching devices with DV/DT capability and methods of making such devices
#986High current lateral GaN transistors with scalable topology and gate drive phase equalization
#987Semiconductor device and method for manufacturing the same
#988Semiconductor device
#989Power semiconductor device having cells with channel regions of different conductivity types
#990Scalable circuit-under-pad device topologies for lateral GaN power transistors
#991Semiconductor power device
#992Semiconductor device, starter circuit, and switched-mode power-supply circuit
#993Semiconductor device
#994Semiconductor device
#995Silicon carbide semiconductor device having a step film formed between a plating film and a first electrode
#996Orthogonal transistor layouts
#997SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
#998Semiconductor device and semiconductor wafer including a porous layer and method of manufacturing
#999Semiconductor device and method for manufacturing the same
#1000Power module for supporting high current densities
#1001Semiconductor device having semiconductor regions of different conductivity types provided at a predetermined interval along a first direction
#1002Semiconductor device, method for manufacturing semiconductor device, inverter circuit, driving device, vehicle, and elevator
#1003Semiconductor device
#1004Electronic device including a transistor having structures with different characteristics
#1005Semiconductor switching element
#1006Semiconductor switching element
#1007RC-IGBT
#1008Trench-gate insulated-gate bipolar transistors
#1009Trench-gate insulated-gate bipolar transistors (IGBTs)
#1010Low band gap semiconductor devices having reduced gate induced drain leakage (GIDL)
#1011Forming a superjunction transistor device
#1012Power semiconductor device
#1013Semiconductor device having electrostatic discharge protection structure with a trench under a connecting portion of a diode
#1014Semiconductor component comprising trench structures and production method therefor
#1015Semiconductor Device
#1016Semiconductor device including a mesa portion including an emitter region having a varied width
#1017Method for producing a superjunction device
#1018Bidirectional bipolar-mode JFET driver circuitry
#1019Termination structure for nanotube semiconductor devices
#1020Isolation structure for semiconductor device having self-biasing buried layer and method therefor
#1021Semiconductor device and method of manufacturing the same
#1022Transistor device with a rectifier element between a field electrode and a source electrode
#1023Trench gate power MOSFET and manufacturing method thereof
#1024Semiconductor device with drain structure and metal drain electrode
#1025Semiconductor device for power transistor
#1026Semiconductor cell structure and power semiconductor device
#1027Enhanced active and passive devices for radio frequency (RF) process and design technology
#1028Semiconductor device
#1029Semiconductor device
#1030Semiconductor device
#1031Field effect transistor (FET) structure with integrated gate connected diodes
#1032Semiconductor device with high voltage field effect transistor and junction field effect transistor
#1033Silicon carbide semiconductor device, manufacturing method therefor and power conversion apparatus
#1034Semiconductor device
#1035MOSFET device of silicon carbide having an integrated diode and manufacturing process thereof
#1036Semiconductor device and method of manufacturing semiconductor device
#1037Laterally diffused metal oxide semiconductor with gate poly contact within source window
#1038Semiconductor device having a reduced surface doping in an edge termination area, and method for manufacturing thereof
#1039Semiconductor device including emitter regions and method of manufacturing the semiconductor device
#1040Insulated gate bipolar transistor (IGBT) with high avalanche withstand
#1041Vertical transistor device structure with cylindrically-shaped field plates
#1042FET with micro-scale device array
#1043Power semiconductor device having different gate crossings, and method for manufacturing thereof
#1044Power MOSFET with a deep source contact
#1045SiC semiconductor device with current sensing capability
#1046SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
#1047Semiconductor device and manufacturing method thereof
#1048Diode, semiconductor device, and MOSFET
#1049Semiconductor devices having a plurality of unit cell transistors that have smoothed turn-on behavior and improved linearity
#1050Semiconductor transistor having superlattice structures
#1051RC-IGBT and manufacturing method thereof
#1052Semiconductor device with cell trench structures and recessed contacts and method of manufacturing a semiconductor device
#1053Method for manufacturing semiconductor device
#1054Semiconductor device and method for manufacturing the same
#1055Method of manufacturing power semiconductor device
#1056MOS-based power semiconductor device having increased current carrying area and method of fabricating same
#1057Semiconductor device with a trench electrode provided inside a trench formed on an upper surface of the semiconductor substrate and method of manufacturing the same
#1058Method of manufacturing LV/MV super junction trench power MOSFETs
#1059Silicon carbide semiconductor device and method of manufacturing a silicon carbide semiconductor device
#1060Method of manufacturing a semiconductor device including an LDMOS transistor
#1061Power semiconductor device
#1062Semiconductor device with trench gate structure including a gate electrode and a contact structure for a diode region
#1063Semiconductor device
#1064Semiconductor device
#1065Static random access memory and manufacturing method thereof
#1066Semiconductor device and method for manufacturing such a semiconductor device
#1067Trench vertical JFET with ladder termination
#1068Power semiconductor device with dV/dt controllability and cross-trench arrangement
#1069Transistors with dissimilar square waffle gate patterns
#1070Forming switch circuit with controllable phase node ringing
#1071Transistors patterned with electrostatic discharge protection and methods of fabrication
#1072Semiconductor device having a triple insulating film surrounded void
#1073Gate-all-around fin device
#1074Semiconductor device, inverter circuit, drive device, vehicle, and elevator
#1075Trench power semiconductor component and method of manufacturing the same
#1076Semiconductor device having an emitter region and a contact region inside a mesa portion
#1077Semiconductor device
#1078Integrated gate resistors for semiconductor power conversion devices
#1079Gate-all-around fin device
#1080Silicon carbide semiconductor device
#1081Semiconductor device
#1082Wide-bandgap semiconductor device including gate fingers between bond pads
#1083Semiconductor device
#1084Semiconductor device
#1085High-voltage semiconductor devices with improved EAS and related manufacturing method thereof
#1086Trench MOSFET device and the preparation method thereof
#1087Semiconductor Device and Transistor Cell Having a Diode Region
#1088Semiconductor device
#1089Power semiconductor devices and a method for forming a power semiconductor device
#1090Semiconductor device and method of manufacturing the same
#1091Semiconductor switching element and method of manufacturing the same
#1092Trench isolated IC with transistors having LOCOS gate dielectric
#1093Integrated gallium nitride power amplifier and switch
#1094Semiconductor device for reduced on-state resistance
#1095Metal-oxide semiconductor (MOS) standard cells employing electrically coupled source regions and supply rails to relax source-drain tip-to-tip spacing between adjacent MOS standard cells
#1096Semiconductor chip having multiple pads and semiconductor module including the same
#1097Semiconductor device
#1098Semiconductor device and manufacturing method thereof
#1099IGBT with dV/dt controllability
#1100Vertical MOSFET having insulated trenches and base region contact
#1101Semiconductor device and method for manufacturing such a semiconductor device
#1102Semiconductor device having a field electrode and a gate electrode in a trench structure and manufacturing method
#1103Semiconductor device
#1104Termination region architecture for vertical power transistors
#1105Semiconductor device and method of manufacturing the same
#1106Semiconductor device and method for manufacturing the same
#1107Semiconductor device
#1108N-channel bipolar power semiconductor device with p-layer in the drift volume
#1109Semiconductor device including a gate contact structure
#1110Semiconductor device
#1111Semiconductor device having a gate electrode embedded in a trench
#1112Semiconductor device
#1113Semiconductor device
#1114Electrostatic discharge protection semiconductor device
#1115Manufacturing method of semiconductor device and semiconductor device
#1116IE type trench gate IGBT
#1117Super junction MOS bipolar transistor having drain gaps
#1118Method of manufacturing power semiconductor device
#1119Method for forming a lateral super-junction MOSFET device and termination structure
#1120Semiconductor epitaxial wafer, semiconductor device, and method of producing semiconductor device
#1121Insulated gate turn-off device having low capacitance and low saturation current
#1122Power semiconductor device
#1123High power gallium nitride devices and structures
#1124Controlling the Reflow Behaviour of BPSG Films and Devices Made Thereof
#1125Semiconductor device and method of manufacturing the same
#1126Switching element and method of manufacturing the same
#1127Heterojunction bipolar transistor unit cell and power stage for a power amplifier
#1128Field plate trench FET and a semiconductor component
#1129Nano-tube MOSFET technology and devices
#1130Lateral MOSFET with buried drain extension layer
#1131Modulated super junction power MOSFET devices
#1132Semiconductor device
#1133Insulated gate bipolar transistors and fabrication methods thereof
#1134Laterally diffused metal oxide semiconductor device with isolation structures for recovery charge removal
#1135Semiconductor device
#1136Vertical JFET made using a reduced masked set
#1137Insulated-gate bipolar transistor structure and method for manufacturing the same
#1138Power semiconductor device with alternating source region and body contact region and manufacturing method thereof
#1139Semiconductor device
#1140Semiconductor device and electrical apparatus
#1141Electric-current sensing device, load driving system, and method for manufacturing electric-current sensing device
#1142Semiconductor device
#1143High power gallium nitride devices and structures
#1144Switch element and load driving device
#1145Power chip and structure of transistor
#1146Semiconductor device having silicide layers
#1147Semiconductor device and method of manufacturing the same
#1148Semiconductor device comprising a switch
#1149Vertical FET structure
#1150Insulated gate bipolar transistor and fabrication method thereof
#1151Methods for fabricating anode shorted field stop insulated gate bipolar transistor
#1152Vertical semiconductor device having a trench gate a base contact region
#1153Power MOSFET with a deep source contact
#1154Flat gate commutated thyristor
#1155Semiconductor device
#1156Semiconductor device
#1157Method of manufacturing a silicon carbide semiconductor device by removing amorphized portions
#1158P-channel DEMOS device
#1159Semiconductor device and method of manufacturing semiconductor device
#1160Composite semiconductor device
#1161Power semiconductor device having trench gate type IGBT and diode regions
#1162Power semiconductor device having trench gate type IGBT and diode regions
#1163Method of producing a semiconductor device
#1164Laterally diffused metal oxide semiconductor with gate poly contact within source window
#1165Semiconductor device and method of manufacturing same
#1166Insulated gate bipolar transistor and preparation method therefor
#1167Semiconductor Device with an IGBT Region and a Non-Switchable Diode Region
#1168Semiconductor device
#1169Semiconductor device and method of manufacturing the semiconductor device
#1170Electronic device using group III nitride semiconductor and its fabrication method
#1171Electronic device using group III nitride semiconductor and its fabrication method
#1172GaAS based IGBT semiconductor structure
#1173Electronic device using group III nitride semiconductor and its fabrication method
#1174Electronic device using group III nitride semiconductor and its fabrication method
#1175Semiconductor device including trenches formed in transistor or diode portions
#1176Controlled resistance integrated snubber for power switching device
#1177Forming recombination centers in a semiconductor device
#1178LDMOS transistor with segmented gate dielectric layer
#1179High voltage MOSFET devices and methods of making the devices
#1180Semiconductor Device Comprising a Plurality of Transistor Cells and Manufacturing Method
#1181Trench semiconductor device layout configurations
#1182Semiconductor device
#1183Semiconductor device
#1184Source-Gate Region Architecture in a Vertical Power Semiconductor Device
#1185Trench isolated IC with transistors having locos gate dielectric
#1186Gate-all-around fin device
#1187Cascode configured semiconductor component
#1188Silicon Carbide Vertical MOSFET with Polycrystalline Silicon Channel Layer
#1189Manufacturing method for semiconductor device having an oxidation-resistant insulating film in a termination region
#1190Semiconductor device with surface insulating film
#1191Semiconductor device having termination trench
#1192Power semiconductor devices having gate trenches and buried edge terminations and related methods
#1193Insulated-gate bipolar transistor (IGBT) or diode including buffer region and lifetime killer region
#1194Semiconductor device and method of manufacturing semiconductor device
#1195Semiconductor device with diode region and trench gate structure
#1196Semiconductor device and manufacturing method for the semiconductor device
#1197Semiconductor device having an emitter region and a contact region inside a mesa portion
#1198Ultra high voltage semiconductor device with electrostatic discharge capabilities
#1199Laterally diffused metal oxide semiconducting devices with lightly-doped isolation layers
#1200LDMOS device with body diffusion self-aligned to gate