208232 ⎘
Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor; Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions; Surface layout of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
Semiconductor device and method of manufacturing the same
#1202Semiconductor device, RC-IGBT, and method of manufacturing semiconductor device
#1203TRENCH GATE IGBT
#1204Switching circuit
#1205Semiconductor device
#1206Field Effect Transistor (FET) or Other Semiconductor Device with Front-Side Source and Drain Contacts
#1207Method of forming a field-effect transistor (FET) or other semiconductor device with front-side source and drain contacts
#1208IGBT die structure with auxiliary P well terminal
#1209Semiconductor device with separation regions
#1210Semiconductor device
#1211Semiconductor device with voltage resistant structure
#1212Lateral DMOS device with dummy gate
#1213Power semiconductor transistor having fully depleted channel region
#1214Semiconductor device
#1215Semiconductor device including sense insulated-gate bipolar transistor
#1216Ruggedized symmetrically bidirectional bipolar power transistor
#1217Field effect transistor having staggered field effect transistor cells
#1218Nanotube termination structure for power semiconductor devices
#1219Integrated Cylindrical Power Cell Module and Manufacturing Method Thereof
#1220Semiconductor device having improved safe operating areas and manufacturing method therefor
#1221Semiconductor device
#1222Methods of manufacturing a semiconductor device with a buried doped region and a contact structure
#1223Semiconductor device having a trench gate
#1224High voltage semiconductor devices and methods of making the devices
#1225Semiconductor device and transistor cell having a diode region
#1226Vertical channel semiconductor device with a reduced saturation voltage
#1227Semiconductor device
#1228Power semiconductor device termination structure
#1229Switching device
#1230Semiconductor device including transistor device
#1231High performance radio frequency switch
#1232Schottky diode and method for its manufacturing
#1233Switch circuit with controllable phase node ringing
#1234Integrated high-side driver for P-N bimodal power device
#1235Insulated-gate bipolar transistor (IGBT) including a branched gate trench
#1236Power semiconductor device
#1237Semiconductor device comprising a gradually increasing field dielectric layer and method of manufacturing a semiconductor device
#1238Semiconductor device and semiconductor package
#1239Semiconductor device and manufacturing method of the same
#1240Method of manufacturing a semiconductor device having electrode trenches, isolated source zones and separation structures
#1241Semiconductor device and power conversion device
#1242Switching field plate power MOSFET
#1243Semiconductor devices and methods for forming a semiconductor device
#1244Semiconductor device
#1245Semiconductor device having auxiliary electrode formed in field plate region
#1246Semiconductor device
#1247Semiconductor device and method for manufacturing the same
#1248Semiconductor device
#1249Semiconductor device with first and second field electrode structures
#1250Semiconductor device including active and dummy cell regions
#1251Semiconductor device and manufacturing method
#1252Gate-all around fin device
#1253Gate-all-around fin device
#1254Power MOSFET with metal filled deep source contact
#1255Method of forming closed cell lateral MOSFET using silicide source
#1256SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
#1257Semiconductor device
#1258Power semiconductor device with dV/dt controllability through select trench electrode biasing, and method of manufacturing the same
#1259Semiconductor device and method for producing the same
#1260Semiconductor device
#1261Heat management in a multi-finger FET
#1262Semiconductor device and method for manufacturing the same
#1263Silicon carbide semiconductor device
#1264PowerMOS
#1265Semiconductor device and method of manufacturing semiconductor device
#1266Semiconductor device and method of manufacturing the same
#1267Semiconductor device and method of manufacturing the same
#1268Narrow active cell IE type trench gate IGBT and a method for manufacturing a narrow active cell IE type trench gate IGBT
#1269Vertical Transistor Device Structure with Cylindrically-Shaped Field Plates
#1270Semiconductor device
#1271Semiconductor device
#1272Semiconductor device
#1273Method of Manufacturing a Superjunction Semiconductor Device and Superjunction Semiconductor Device
#1274Transistor device with high current robustness
#1275Semiconductor Device with a Source Trench Electrode
#1276Semiconductor device and manufacturing method thereof
#1277SOI island in a power semiconductor device
#1278High voltage MOSFET devices and methods of making the devices
#1279POWER MOSFET, AN IGBT, AND A POWER DIODE
#1280Semiconductor device with an insulated-gate bipolar transistor region and a diode region
#1281Semiconductor device
#1282Semiconductor device
#1283Semiconductor Device and Method of Manufacturing the Semiconductor Device
#1284Gate-all-around fin device
#1285Semiconductor device comprising a transistor cell including a source contact in a trench, method for manufacturing the semiconductor device and integrated circuit
#1286Method and structure for reducing switching power losses
#1287Silicon carbide semiconductor device
#1288Semiconductor device with drift zone and backside emitter and method of manufacturing thereof
#1289Semiconductor device having a sense IGBT for current detection of a main IGBT
#1290Power module and motor drive circuit
#1291Semiconductor Devices, Electrical Devices and Methods for Forming a Semiconductor Device
#1292Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device
#1293Reverse-blocking IGBT having a reverse-blocking edge termination structure
#1294Power transistor having perpendicularly-arranged field plates and method of manufacturing the same
#1295Method of manufacturing a semiconductor device with a metal-filled groove in a polysilicon gate electrode
#1296Semiconductor device and method of manufacturing the same
#1297B-TRAN Geometry and Structure That Provides Both High Gain and High Current Density
#1298n-channel bipolar power semiconductor device with p-layer in the drift volume
#1299Power semiconductor device having a field electrode
#1300Semiconductor device and manufacturing method therefor
#1301Method for producing a superjunction device
#1302Semiconductor device and method of manufacturing the same
#1303Schottky barrier diode and method of manufacturing the same
#1304Semiconductor devices having segmented ring structures
#1305Super junction MOSFET and method of manufacturing the same
#1306Semiconductor device having super junction metal oxide semiconductor structure and fabrication method for the same
#1307Semiconductor device and manufacturing method thereof
#1308SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
#1309Trench-based power semiconductor devices with increased breakdown voltage characteristics
#1310Semiconductor device and method for manufacturing the same
#1311Semiconductor device and method of manufacturing semiconductor device
#1312Insulated gate turn-off device with hole injector for faster turn off
#1313Power semiconductor device having fully depleted channel region
#1314Power semiconductor device having fully depleted channel regions
#1315Power semiconductor device having fully depleted channel regions
#1316Power semiconductor device having fully depleted channel regions
#1317Trench MOSFET device and the preparation method thereof
#1318Trench gate trench field plate vertical mosfet
#1319Semiconductor device for power transistor
#1320LDMOS transistor and method
#1321LDMOS transistor and method
#1322Process of forming semiconductor device having interconnection formed by electro-plating
#1323Electric assembly including an insulated gate bipolar transistor device and a wide-bandgap transistor device
#1324SEMICONDUCTOR DEVICE
#1325Lateral super-junction MOSFET device and termination structure
#1326Trench power semiconductor device
#1327Semiconductor device
#1328Method of forming a semiconductor device and structure therefor
#1329Semiconductor device
#1330Trench IGBT with waved floating P-well electron injection
#1331Semiconductor device comprising a transistor including a first field plate and a second field plate
#1332Semiconductor device and method of making
#1333Semiconductor device
#1334Combined gate trench and contact etch process and related structure
#1335Semiconductor device
#1336Electric field shielding in silicon carbide metal-oxide-semiconductor (MOS) device cells using body region extensions
#1337Electric field shielding in silicon carbide metal-oxide-semiconductor (MOS) device cells
#1338MOS transistor for radiation-tolerant digital CMOS circuits
#1339Nanotube semiconductor devices
#1340Electric field shielding in silicon carbide metal-oxide-semiconductor (MOS) devices having an optimization layer
#1341Electric field shielding in silicon carbide metal-oxide-semiconductor (MOS) device cells using channel region extensions
#1342Semiconductor devices and methods for forming semiconductor devices
#1343Semiconductor device
#1344SYSTEMS AND METHODS FOR CMOS-INTEGRATED JUNCTION FIELD EFFECT TRANSISTORS FOR DENSE AND LOW-NOISE BIOELECTRONIC PLATFORMS
#1345TRENCH MOSFET STRUCTURE AND LAYOUT WITH SEPARATED SHIELDED GATE
#1346Semiconductor device having a channel region patterned into a ridge by adjacent gate trenches
#1347Semiconductor device and semiconductor device manufacturing method
#1348Semiconductor device with equipotential ring electrode
#1349Semiconductor Device Having Stripe-Shaped Gate Structures and Spicular or Needle-Shaped Field Electrode Structures
#1350Insulated gate silicon carbide semiconductor device and method for manufacturing same
#1351Super-junction semiconductor device
#1352Semiconductor device having field-effect structures with different gate materials
#1353Semiconductor apparatus
#1354Reverse-conducting semiconductor device
#1355Semiconductor device and method for manufacturing the same
#1356Semiconductor device
#1357Trench MOSFET shield poly contact
#1358Silicon carbide (SiC) device with improved gate dielectric shielding
#1359Semiconductor device having a super junction structure
#1360Combined source and base contact for a field effect transistor
#1361SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
#1362Methods of Manufacturing Semiconductor Devices
#1363Dual device semiconductor structures with shared drain
#1364Bypassed gate transistors having improved stability
#1365Semiconductor transistor and method for forming the semiconductor transistor
#1366Bipolar semiconductor device with multi-trench enhancement regions
#1367Bipolar semiconductor device with sub-cathode enhancement regions
#1368Semiconductor device
#1369Semiconductor device having varying wiring resistance
#1370Method of manufacturing semiconductor devices with transistor cells and semiconductor device
#1371Bipolar Semiconductor Device Having Localized Enhancement Regions
#1372Dual-gate trench IGBT with buried floating P-type shield
#1373Semiconductor device and manufacturing method thereof
#1374Semiconductor device
#1375Semiconductor device and method of manufacturing semiconductor device
#1376Semiconductor device
#1377Compliant bipolar micro device transfer head with silicon electrodes
#1378Semiconductor device
#1379LDMOS transistors including resurf layers and stepped-gates, and associated systems and methods
#1380Semiconductor device including laterally diffused metal-oxide-semiconductor field effect transistor and method for manufacturing the same
#1381Switching device
#1382Semiconductor device with insulating section of varying thickness
#1383Semiconductor device
#1384Semiconductor device
#1385Switching device
#1386Switching device
#1387Semiconductor devices with cavities
#1388Power module having a switch module for supporting high current densities
#1389WIDE BANDGAP SEMICONDUCTOR DEVICE INCLUDING TRANSISTOR CELLS AND COMPENSATION STRUCTURE
#1390Method for fabricating a metal high-k gate stack for a buried recessed access device
#1391Semiconductor device
#1392Semiconductor device having field plate structures, source regions and gate electrode structures between the field plate structures
#1393Static random access memory and manufacturing method thereof
#1394Silicon carbide semiconductor device
#1395Semiconductor device and manufacturing method of the same
#1396Semiconductor device with arrangement of semiconductor regions for improving breakdown voltages
#1397Semiconductor device with needle-shaped field plates and a gate structure with edge and node portions
#1398Semiconductor device with needle-shaped field plate structures in a transistor cell region and in an inner termination region
#1399MOSFET Having Source Region Formed in a Double Wells Region
#1400Vertical power transistor with termination area having doped trenches with variable pitches
#1401Transistor layout with low aspect ratio
#1402Semiconductor device
#1403Vertical power transistor die with etched beveled edges for increasing breakdown voltage
#1404Silicon carbide device and method of making thereof
#1405Semiconductor Device with Cell Trench Structures and Contacts and Method of Manufacturing a Semiconductor Device
#1406Semiconductor device
#1407RB-IGBT
#1408Power device and method of manufacturing the same
#1409Semiconductor device
#1410Semiconductor device
#1411Semiconductor device including sense insulated-gate bipolar transistor
#1412Process method and structure for high voltage MOSFETs
#1413Silicon carbide semiconductor device and method of manufacturing the same
#1414Chip diode and method for manufacturing same
#1415Trench gate trench field plate vertical MOSFET
#1416Method for manufacturing a semiconductor device having silicide layers
#1417Semiconductor device with superjunction structure and transistor cells in a transition region along a transistor cell region
#1418Electric circuit including a semiconductor device with a first transistor, a second transistor and a control circuit
#1419Semiconductor device
#1420Vertical high voltage semiconductor apparatus and fabrication method of vertical high voltage semiconductor apparatus
#1421Low switching loss high performance power module
#1422Gate-all-around fin device
#1423Power MOSFET with metal filled deep source contact
#1424Gate-all-around fin device
#1425Semiconductor device and manufacturing method of semiconductor device
#1426Transistor device with segmented contact layer
#1427Field effect transistor (FET) structure with integrated gate connected diodes
#1428High voltage tolerant LDMOS
#1429Semiconductor component that includes a clamping structure and method of manufacturing the semiconductor component
#1430SPLIT-GATE SUPERJUNCTION POWER TRANSISTOR
#1431Method for fabricating of cell pitch reduced semiconductor device and semiconductor device
#1432Low voltage trench metal oxide semiconductor field effect transistor
#1433Method of forming a semiconductor structure having integrated snubber resistance
#1434Semiconductor device including a heat sink structure
#1435LDMOS device with graded body doping
#1436SEMICONDUCTOR DEVICE HAVING A SUPER JUNCTION STRUCTURE AND METHOD OF MANUFACTURING THE SAME
#1437Semiconductor device, and method for manufacturing semiconductor device
#1438Horizontal current bipolar transistors with improved breakdown voltages
#1439Semiconductor device having trenches with enlarged width regions
#1440Semiconductor device comprising a first gate trench and a second gate trench
#1441Semiconductor device
#1442LDMOS device with body diffusion self-aligned to gate
#1443Semiconductor device having a desaturation channel structure for desaturating a charge carrier concentration in an IGBT cell
#1444IGBT
#1445Semiconductor device
#1446Trench-gate type semiconductor device and manufacturing method therefor
#1447Method of manufacturing a semiconductor device
#1448Semiconductor device and method of manufacturing semiconductor device having parallel contact holes between adjacent trenches
#1449Transistor device with increased gate-drain capacitance
#1450IE type trench gate IGBT
#1451Semiconductor Device
#1452Termination design for high voltage device
#1453Method of manufacturing a semiconductor device having electrode trenches, isolated source zones and separation structures
#1454Semiconductor device with surface insulating film
#1455Field-effect semiconductor device having pillar regions of different conductivity type arranged in an active area
#1456Semiconductor device
#1457Field effect transistor (FET) structure with integrated gate connected diodes
#1458Semiconductor device including superjunction structure formed using angled implant process
#1459Switching Device for Power Conversion and Power Conversion Device
#1460Semiconductor device
#1461Semiconductor device and manufacturing method of semiconductor device
#1462Semiconductor device and method for manufacturing the same
#1463Semiconductor device
#1464Trench vertical JFET with ladder termination
#1465High voltage semiconductor devices and methods of making the devices
#1466Semiconductor device and manufacturing method thereof
#1467Semiconductor device with voltage resistant structure
#1468Gate-all-around fin device
#1469Semiconductor device and method of manufacturing the same
#1470Latch-up resistant transistor
#1471Trench IGBT with tub-shaped floating P-well and hole drains to P-body regions
#1472Semiconductor device with improved short circuit capability
#1473Method of manufacturing a semiconductor device with field electrode structures, gate structures and auxiliary diode structures
#1474Trench gate trench field plate vertical MOSFET
#1475Insulated gate semiconductor device with soft switching behavior
#1476Semiconductor chip with integrated series resistances
#1477Split-gate lateral extended drain MOS transistor structure and process
#1478Power semiconductor transistor having fully depleted channel region
#1479Semiconductor device with deep diffusion region
#1480SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
#1481TRANSISTOR STRUCTURE WITH REDUCED PARASITIC "SIDE WALL" CHARACTERISTICS
#1482Method of manufacturing a semiconductor device with trench gate by using a screen oxide layer
#1483Multiple zone power semiconductor device
#1484Semiconductor device
#1485Semiconductor device, power control device and electronic system
#1486Nitride semiconductor device with asymmetric electrode tips
#1487Semiconductor device and method of manufacturing the same
#1488Contacting SOI subsrates
#1489Method of manufacturing a silicon carbide semiconductor device by removing amorphized portions
#1490Termination region architecture for vertical power transistors
#1491Diode, semiconductor device, and MOSFET
#1492Source-gate region architecture in a vertical power semiconductor device
#1493Semiconductor device
#1494Semiconductor device and method of manufacturing the same
#1495Semiconductor device VDMOS having a gate insulating film having a high dielectric constant portion contacting the drift region for relaxing an electric field generated in the gate insulating film
#1496Superjunction semiconductor device with oppositely doped semiconductor regions formed in trenches
#1497Silicon carbide semiconductor device and method for producing the same
#1498Vertical field effect transistor device having alternating drift regions and compensation regions
#1499Semiconductor device and semiconductor device manufacturing method
#1500Semiconductor device and method of manufacturing the same